Silicon wafer cleaner and silicon wafer cleaning method

Abstract

The invention provides a silicon wafer cleaner and a silicon wafer cleaning method, which are used for manufacturing of silicon solar cells, and belongs to the technical field of solar cell production. The cleaner is a mixed solution of a surfactant prepared from a tween series and a span series as well as an organic cleanser and deionized water, wherein the organic cleanser comprises limonene, isopropanol and ethylenediamine. The cleaning method comprises steps as follows: components of the cleanser are uniformly mixed, deionized water which is 20-25 times of the components is added for dilution, and a silicon wafer is put in a cleaning fluid at the normal temperature for cleaning. The method is particularly applicable to cleaning of a silicon wafer with a dirty surface; a rough polishing and APM (advanced power management) process is replaced with the method, the use amount of ammonia water and hydrogen peroxide can be effectively reduced, and no corrosion is caused to the surface of the silicon wafer; requirements for equipment are low, the operation is simple, the production cost can be greatly reduced, and the current production concept of high efficiency and environmental protection is met.

Description

technical field [0001] The invention relates to a silicon chip cleaning agent and a silicon chip cleaning method, which are used for making silicon solar cells and belong to the technical field of solar cell production. Background technique [0002] In the production of monocrystalline silicon solar cells, the general production and processing process of silicon wafers is single crystal growth→cutting→outer diameter barrel grinding→flat edge or V-shaped groove processing→slicing→chamfering→grinding, corrosion→polishing→cleaning→inspection →Surface texturing and pickling→diffusion junction→phosphorous silicon glass→plasma etching and pickling→anti-reflection coating→screen printing→rapid sintering, etc. The above-mentioned cleaning mainly refers to the final cleaning after polishing, and many steps in the processing of single crystal silicon wafers need to be cleaned. Generally, there is a cleaning process before the end of each process to eliminate the pollutants in this pro...

AI Technical Summary

Problems solved by technology

Rough polishing uses a higher concentration of sodium hydroxide solution to react with silicon wafers. Although the surface damage layer can be removed and surface pollutants can be removed to a certain extent, after rough polishing, the surface solution of silicon wafers remains more alkali, and the amount of thinning is very small. Large, difficult to control, and have a great impact on subsequent processes

The APM cleaning process uses ammonia and hydrogen peroxide for cleaning, and removes slight organic matter, surface particles and some metal pollutants through oxidation and micro-etching. Ammonia is easy to volatilize, hydrogen peroxide is easy to decompose, and needs to be continuously added. The process stability is poor and the cleaning effect is not good. completely