Preparation method of composite mask for high-energy ion implantation

A composite mask and high-energy ion technology, which is applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve the problem that photoresist masks are easy to remain, there are many process errors in graphic dimensions, and the blocking effect of thin film masks is affected and other problems, to avoid device process failure, avoid mask residues, and shorten the glue removal time

Active Publication Date: 2015-05-06
SHANGHAI INST OF TECHNICAL PHYSICS - CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Although the hard mask avoids the bombardment denaturation and residual problems of the photoresist mask, it needs to deposit an additional dielectric film, and perform multi-step photolithography and etching, and the process is complex
The reasons why the hard mask is not suitable for HgCdTe devices are: 1) The deposition temperature of the hard mask layer is far beyond the temperature range (below 70°C) that the HgCdTe material can withstand, while the low temperature growth (2 , graphite, amorphous carbon, etc.) have a large lattice mismatch with HgCdTe materials, and the adhesion of the film is poor; 3) the hard mask requires multi-step photolithography and pattern etching, and the introduced pattern size There are many process errors, which makes it difficult to guarantee the pattern accuracy of the small-size implantation area

Method used

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  • Preparation method of composite mask for high-energy ion implantation
  • Preparation method of composite mask for high-energy ion implantation
  • Preparation method of composite mask for high-energy ion implantation

Examples

Experimental program
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Effect test

Embodiment 1

[0025] Using the mask preparation method described in the present invention, evaporation deposition, photolithography and positive and negative tilt angle evaporation deposition are performed on the surface of the mercury cadmium telluride epitaxial material chip. The preparation process is as attached figure 2 Shown. First, after annealing and surface corrosion treatment, the surface of the HgCdTe epitaxial material chip is thermally evaporated to deposit a 60nm thick cadmium telluride injection barrier layer, the chip is cleaned, and a layer of 2 to 3 microns is spin-coated on the chip surface A thick positive photoresist is used to expose the chip to ultraviolet light with a photolithography plate. After development and fixation, a photoresist injection mask is obtained.

[0026] Load the chip with the prepared mask pattern on the sample stage of the high-vacuum thermal evaporation equipment, first rotate the sample stage at an inclination angle of 0° to deposit a ~20nm thick ...

Embodiment 2

[0030] Using the mask preparation method described in the present invention, evaporation deposition, photolithography and positive and negative tilt sputtering deposition are performed on the surface of the mercury cadmium telluride epitaxial material chip. The preparation process is as attached figure 2 Shown. First, after annealing and surface corrosion treatment, a -20nm thick cadmium telluride injection barrier layer is thermally evaporated on the surface of the HgCdTe epitaxial material chip after the annealing treatment and surface corrosion treatment, the chip is cleaned, and a layer of 2 to 3 microns is spin-coated on the chip surface A thick positive photoresist is used to expose the chip to ultraviolet light with a photolithography plate. After development and fixation, a photoresist injection mask is obtained.

[0031] Load the chip with the mask pattern prepared on the sample stage of the magnetron sputtering equipment. First, rotate the sample stage at an inclination...

Embodiment 3

[0035] Using the mask preparation method described in the present invention, evaporation deposition, photolithography and positive and negative tilt angle evaporation deposition are performed on the surface of the mercury cadmium telluride epitaxial material chip. The preparation process is as attached figure 2 Shown. First, after annealing and surface corrosion treatment, the surface of the mercury cadmium telluride epitaxial material chip is thermally evaporated to deposit a ~200nm thick cadmium telluride injection barrier layer, the chip is cleaned, and the chip surface is spin-coated with a thickness of 2 to 3 microns A thick positive photoresist is used to expose the chip to ultraviolet light with a photolithography plate. After development and fixation, a photoresist injection mask is obtained.

[0036] Load the chip with the prepared mask pattern on the sample stage of the high-vacuum thermal evaporation equipment. First, rotate the sample stage at an inclination angle of ...

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Abstract

The invention discloses a preparation method of a composite mask for high-energy ion implantation. The mask is a composite photoresist mask with a three-layer structure, a photoresist mask figure of the composite mask is made between an implantation barrier layer dielectric film and a surface layer sacrifice dielectric film, and is used for high-energy ion implantation of the mask. The preparation method comprises the steps that the mask figure is formed on the surface of the implantation barrier layer dielectric film through positive photoresist in a photoetching mode, and the surface layer sacrifice dielectric film grows in an injection region, and the side wall and the top end of the photoresist mask through a positive and negative inclination film evaporation technology, and is used for high-energy ion implantation. The composite mask can solve the problem that the photoresist mask chaps and denatures under the high-energy ion bombardment, no residue is left when the mask is removed, the surface cleanliness of a chip is guaranteed, and device performance is improved.

Description

Technical field [0001] The invention relates to a mask technology in a microelectronics process, in particular to a method for preparing a composite mask for mercury cadmium telluride high-energy ion implantation. Background technique [0002] Infrared focal plane array detectors based on mercury cadmium telluride photodiodes have been widely used in military security, resource exploration, ocean monitoring, and space remote sensing. According to the device structure, HgCdTe photodiodes can be divided into n-on-p type and p-on-n type. After decades of technology accumulation, the n-on-p process has become mature. The short-wave infrared (SWIR) and mid-wave infrared (MWIR) HgCdTe FPA devices based on this process already have high performance. However, for long wave (LW) and very long wave (VLW) devices, in order to obtain the spectral response of the corresponding spectrum, the band gap of the HgCdTe base material must be further reduced (<90meV). With such a narrow band gap...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/266
CPCH01L21/266
Inventor 施长治林春
Owner SHANGHAI INST OF TECHNICAL PHYSICS - CHINESE ACAD OF SCI
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