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Preparation method of nano zinc oxide thin film and zinc oxide/copper oxide semiconductor material

A nano-zinc oxide and semiconductor technology, which is applied in semiconductor/solid-state device manufacturing, semiconductor devices, metal material coating technology, etc., can solve environmental pollution and other problems, and achieve the effects of low preparation cost, easy control of technical parameters, and simple equipment

Inactive Publication Date: 2013-10-30
HENAN UNIV OF SCI & TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

ZnO rosette-like structures formed by chemical liquid ZnO nanowalls have also been synthesized on Si substrates (Journal of Industrial and Engineering Chemistry 14, 578–583, 2008), but ZnO is sometimes nanowalls, sometimes nanowires, and chemical The liquid method involves many chemical reagents, which will cause certain pollution to the environment

Method used

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  • Preparation method of nano zinc oxide thin film and zinc oxide/copper oxide semiconductor material
  • Preparation method of nano zinc oxide thin film and zinc oxide/copper oxide semiconductor material
  • Preparation method of nano zinc oxide thin film and zinc oxide/copper oxide semiconductor material

Examples

Experimental program
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Effect test

Embodiment 1

[0023] The present embodiment is the preparation method of nano zinc oxide thin film, and its specific steps are as follows:

[0024] 1) Use semi-automatic amorphous strip preparation equipment to continuously spray liquid zinc onto the wall of a high-speed rotating copper cylinder to rapidly cool it to form a metal zinc strip with a thickness of 40 μm;

[0025] 2) Put the metal zinc strip into a beaker, add absolute alcohol, ultrasonically clean it for 15 minutes, then rinse it with distilled water, dry it, and put the cleaned metal zinc strip into a 1mol / L copper sulfate solution at room temperature for erosion for 3 seconds, the surface of the metal zinc strip turns black, take out the metal zinc strip, dry naturally, and place the metal zinc strip in the crucible;

[0026] 3) After the temperature in the tube furnace rises to 350°C, 400°C, 500°C, 550°C and 600°C respectively, put the metal zinc strip and the crucible into the furnace, keep it warm in the air for 3 hours, a...

Embodiment 2

[0031] This embodiment is a preparation method of zinc oxide / copper oxide semiconductor material, and its specific steps are as follows:

[0032] 1) Put the metal zinc strip in Example 1 into a beaker filled with absolute alcohol, ultrasonically clean it for 15 minutes, rinse it with distilled water, dry it, and put the cleaned metal zinc strip into sulfuric acid with a concentration of 1mol / L In the copper solution for 3 seconds, take out the metal zinc strip to dry naturally, and place the metal zinc strip in the crucible;

[0033] 2) After the temperature in the tube furnace rises to 700°C, put the metal zinc strip and the crucible into the furnace, keep it warm in the air for 3 hours, and cool it down to room temperature naturally to obtain zinc oxide / oxide with zinc as the base material. copper semiconductor material.

[0034] The zinc oxide / copper oxide semiconductor material prepared in this embodiment is used as a sample to carry out the following tests:

[0035] The...

Embodiment 3

[0038] The present embodiment is the preparation method of nano zinc oxide thin film, and its specific steps are as follows:

[0039]1) Use 1000# water abrasive paper to grind the surface of industrial pure zinc sheet with a thickness of 0.3mm to remove the oxide film on the surface, put the polished zinc sheet into a beaker, clean it ultrasonically with acetone for 10 minutes, and then ultrasonically clean it with distilled water for 10 minutes. Finally, rinse with absolute alcohol and let it dry naturally;

[0040] 2) Immerse the cleaned zinc flakes in 1mol / L copper sulfate solution for 5 seconds, the surface of the zinc flakes will turn black, take them out, and put them into a boat-shaped crucible after the zinc flakes are naturally dried;

[0041] 3) Raise the temperature in the tubular resistance furnace to 500°C, and feed different proportions of nitrogen and oxygen into the furnace at the same time to obtain different partial pressures of oxygen (~0.001%, 5%, 15%, 25%,...

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Abstract

The invention discloses a preparation method of a nano zinc oxide thin film. The preparation method comprises the following steps of: (1) taking a zinc substrate with zinc on the surface, and cleaning the surface or removing an oxide skin for later use; (2) preparing saturated copper salt solution with concentration of 0.05 mol / L, placing the zinc substrate in a copper salt bath to soak for 1 second to 1 minute, taking out and naturally drying; (3) preserving heat of the soaked zinc substrate at 400-550 DEG C in an oxygen-containing atmosphere for 30 minutes to 48 hours to obtain the nano zinc oxide thin film with a nano wall structure on the surface. According the preparation method, a loose copper layer is deposited on the surface of the zinc substrate, and then thermal oxidation is performed in the oxygen-containing atmosphere to obtain a rose structure consisting of ZnO nano wall, and meanwhile, a ZnO / CuO n-p semiconductor structure can also be prepared. The method has the characteristics of small environmental pollution, simple equipment and low preparation cost, and meanwhile, the technical parameters are easy to control, for example, the formation temperature range is wide, and the influence of partial pressure of oxygen is small. The prepared nano zinc oxide thin film can be used for preparing a photoanode of a fuel sensitized solar cell.

Description

technical field [0001] The invention relates to a preparation method of a nanometer zinc oxide film, and also relates to a preparation method of a zinc oxide / copper oxide semiconductor. Background technique [0002] In the journal Applied Physics Letters90, 033107, 2007, it was reported that ZnO and carbon powder were used as raw materials, and ZnO nanowalls were grown on GaN / c-Al2O3 substrates with gold by chemical vapor deposition. Due to the high melting point of ZnO, in the chemical vapor phase During the deposition process, the furnace temperature was set at 900°C. Using these ZnO nanowalls as photoanodes for fuel-sensitized solar cells can significantly improve the performance of the cells (Journal of Nanoscience and Nanotechnology 10, 3654–3658, 2010). ZnO nanosheets can also be synthesized by microwave vapor deposition, which is similar to chemical vapor deposition and requires high temperature heating of ZnO and carbon powder (Journal of Nanoscience and Nanotechnol...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C8/10C23C18/38H01G9/04H01G9/20H01L51/48
CPCY02E10/549Y02P70/50
Inventor 徐春花王俊鹏李炎刘玉亮李萍李香利
Owner HENAN UNIV OF SCI & TECH
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