39results about How to "Reduce the number of patterning processes" patented technology

The invention discloses a thin film transistor and a manufacturing method thereof as well as a display device, relates to the display field and can solve the problem that an active layer is easy to corrode on a source electrode and a drain electrode in an etching process, so that a thin film transistor device can be prepared with a back channel etching process, the manufacturing process time of the thin film transistor is reduced, and the manufacturing cost is saved. The thin film transistor comprises a grid electrode, an active layer, a source electrode and drain electrode, wherein the source electrode and the drain electrode are made of at least two kinds of materials, cell reaction can occur to the materials of the source electrode and the drain electrode in an etching liquid so that the source electrode and the drain electrode are corroded, and the etching liquid doesn't corrode the active layer.

The invention provides an array substrate, a manufacturing method thereof and a display device. The manufacturing method comprises the steps that a grid metal film is deposited on a substrate body, and a first graph comprising a grid is formed through a primary composition technology; a grid insulating film, a first transparent conductive film, a source drain metal film and a doped a-si film are sequentially deposited, and a second graph comprising a pixel electrode, a source, a drain and a doped semiconductor layer is formed through a secondary composition technology; the a-si film is deposited, and a third graph comprising a TFT channel, a semiconductor layer and a grid insulating layer via hole is formed through a third composition technology; a passivation layer film is deposited and a fourth graph comprising a passivation layer via hole is formed through a fourth composition technology, wherein the passivation layer film via hole corresponds to the grid insulating layer via hole in position; a second transparent conductive layer is deposited and a fifth graph comprising an electric connecting part is formed through a fifth composition technology. By means of the manufacturing method, manufacturing processes can be reduced and the product quality can be improved.

The embodiment of the invention provides a cover plate, a preparation method of the cover plate and a display device thereof and relates to the technical field of touch control. The use frequency of composition process can be reduced and the bridge point breakdown phenomenon in ESD process can be avoided. The cover plate comprises a transparent substrate, an induction electrode layer and a driving electrode layer which are arranged on the transparent substrate, wherein the induction electrode layer and the driving electrode layer are isolated by an insulating layer; the induction electrode layer comprises a plurality of induction electrodes; the driving electrode layer comprises a plurality of driving electrodes; the induction electrodes and the driving electrodes are arranged in a crossing form; the induction electrodes and the driving electrodes have grid structures. The cover plate is applied to a touch display device.

A thin film transistor, a manufacturing method thereof, and a display device are provided. The thin film transistor includes a gate electrode (21), an active layer (23), a source electrode (241) and a drain electrode (242). The source electrode (241) and the drain electrode (242) are formed of at least two materials, the forming materials of the source electrode (241) and the drain electrode (242) can create a cell reaction in a corresponding etching solution so as to be etched, and material of the active layer (23) is not corroded by the etching solution. With the thin film transistor and manufacturing method thereof according to embodiments of the invention, a problem that an active layer is liable to be corroded in an etching procedure of a source electrode and a drain electrode can be solved, and thus the thin film transistor device can be manufactured by using a back channel etch process. Consequently, the process number for manufacture of the thin film transistor is decreased, and the manufacturing cost is saved.

The invention provides a photoelectric detection substrate, a manufacturing method thereof, and a photoelectric detection device. The photodetection substrate includes coplanar thin film transistors and photodiodes, and the thin film transistors are vertical channel structures. The invention effectively reduces the overall thickness of the photodetection substrate, reduces the deformation of the substrate caused by stress, avoids the damage caused by the deformation of the substrate, and improves Product yield. At the same time, due to the coplanar structure, the thin film transistor and the photodiode can be manufactured simultaneously, which reduces the number of patterning processes, simplifies the preparation process, and reduces the production cost. In addition, since the occupied area of ​​the thin film transistor with the vertical channel structure is small, the light-sensing area of ​​the photodiode can be increased, thereby improving the detection efficiency and product resolution.

The invention belongs to the field of display technology, and discloses an array substrate and a manufacturing method thereof. The source pattern, drain pattern, pixel electrode pattern and active layer pattern of the array substrate are formed by a single patterning process. Compared with the traditional array substrate manufacturing process, the process is simple, the production time is shortened, and the product cost is reduced. , Improved product quality.

The present invention provides an array substrate, a manufacturing method thereof, and a display device, wherein the manufacturing method includes: forming an active material layer, a gate insulating layer, and a metal thin film on the base substrate, and forming an array substrate through a first patterning process, including The pattern of the source layer and the pattern including the gate, source, drain, gate line and data line; form a passivation layer on the substrate, and form source contact holes and drain contact holes through the second patterning process and a bridge structure contact hole; a transparent conductive film is formed on the base substrate, and part of the transparent conductive film is removed by a film stripping process to form a source contact part, a drain contact part, a pixel electrode and a bridge structure. The above-mentioned manufacturing method reduces the number of use of the patterning process, and has the advantages of simple manufacturing method, high production efficiency, and high product yield.

The invention provides a touch substrate, a manufacturing method thereof, and a display device, which belong to the field of display technology. Wherein, the touch substrate includes a first touch electrode, a first insulating layer, a second touch electrode and a second insulating layer arranged in sequence on the base substrate, and the manufacturing method of the touch substrate includes: A patterning process forms the patterns of the second touch electrodes and the second insulating layer. The technical solution of the present invention can reduce the number of masks required for manufacturing the touch substrate, reduce the number of patterning processes for manufacturing the touch substrate, shorten the production time of the touch substrate, and reduce the manufacturing cost of the touch substrate.

The embodiment of the invention provides an upper substrate for the touch display panel, and a preparation method thereof, a touch display panel and a preparation method thereof, relating to the technical field of display and aiming at preventing the increase of picture composition times, and lowering the production cost. The preparation method of the upper substrate comprises the following steps: forming a black matrix through one-time composition technology, wherein the black matrix in the display area corresponds to a gap between the two adjacent touch electrodes; forming a negative photosensitive type organic resin thin film on the substrate of the black matrix, exposing and developing by taking the black matrix as a mask, removing the organic resin thin film corresponding to the black matrix so as to form an organic resin layer; forming a transparent conductive thin film above the organic resin layer, wherein the transparent conductive thin films respectively positioned above the organic resin layer and the black matrix are separated, the touch electrode is formed on the transparent conductive thin film above the organic resin layer, and a retention pattern is formed on the transparent conductive thin film above the black matrix. The preparation methods are used for manufacturing the upper substrate for the touch display panel, and the touch display panel.

According to embodiments of the present invention, there are provided a TFT array substrate, a method for manufacturing the TFT array substrate and an electronic device. The method for manufacturing the TFT array substrate comprises: a first patterning process, in which a pattern of a pixel electrode formed by a first transparent conductive layer and patterns of a drain electrode and a source electrode that are separated from each other and a data line, which are formed by a first metal layer, are formed on a transparent substrate; a second patterning process, in which a pattern of a gate insulating layer and a pattern of an active layer formed by a transparent oxide layer are formed on the transparent substrate subjected to the first patterning process; and a third patterning process, in which a pattern of a common electrode formed by a second transparent conductive layer and patterns of a gate electrode and a gate line which are formed by a second metal layer are formed on the transparent substrate subjected to the second patterning process.

The invention provides an array substrate and a preparation method thereof, belongs to the technical field of array substrates, and aims at solving the problem of complicated preparation technology of the existing array substrate employing a double-channel thin-film transistor. The array substrate provided by the invention comprises a plurality of thin-film transistors, a first electrode and a second electrode, wherein each thin-film transistor comprises a grid, a first active region and a second active region; each first active region and each second active region are respectively located below and above each grid and are composed of metal-oxide semiconductors; the first electrode and the first active regions are located on the same layer; the second electrode and the second active regions are located on the same layer; and the first electrode and the second electrode are composed of ion-implanted metal-oxide semiconductors.