148results about How to "Increase the safety distance" patented technology

The invention relates to a secondary battery top cover assembly and a secondary battery. The top cover assembly comprises a top cover plate (3), an electrode terminal (1), a lower insulating plate (5), a sealing part (2) and an insulating part (4), wherein a through hole (31) is formed in the top cover plate (3); the electrode terminal (1) covers the through hole (31); the lower insulating plate (5) is at least partially located on one side, far from the electrode terminal (1), of the top cover plate (3); the sealing part (2) is at least partially located between the top cover plate (3) and the electrode terminal (1); and the insulating part (4) is at least partially arranged between the top cover plate (3) and the lower insulating plate (5), wherein the insulating part (4) and the sealingpart (2) jointly surround the side wall of the through hole (31) and an area, close to the through hole (31), of the upper surface and the lower surface of the top cover plate (3). According to the top cover assembly, the insulating part is additionally arranged between the top cover plate and the lower insulating plate, so that the creepage distance between the top cover plate and the electrodeterminal can be increased; and when a high-voltage discharge occurs in the abnormal condition of the electrode assembly, the safety distance inside the secondary battery is increased equivalently, sothat the possibility of fire explosion and the like of a cell can be reduced, and the working safety of the secondary battery can be improved.

Programmable antifuse transistor, in particular n-channel MOS transistor, and a method for programming at least one such antifuse transistor, includes at least one gate with a gate terminal, source with a source terminal, drain with a drain terminal, and substrate with a substrate terminal, configured so that active circuits / circuit elements do not have to be located at a distance from the antifuse, minimizing area requirements, without additional process steps the level of the potential difference between source terminal and substrate terminal is less than about 0.5 volts, drain terminal and source terminal lie at different potentials. By adjusting drain-source voltage and / or the gate-source voltage a flow of charge carriers occurs between source and drain, causing semiconductor material between source and drain to be thermally heated and to locally melt, forming at least one permanently conducting channel between source and drain.

A thermally protected surge suppression device comprises a housing and a base seat with a mounting plate. The base seat is provided with a surge suppression component and a thermal protection device, and the thermal protection device further comprises a metal bulge electrically connecting to the electrode B of the surge suppression component, a compression spring, a slider provided with an arc extinguishing component movable on the guide-track groove. In normal working condition, the conductive metal member electrically connects to the metal bulge via a low temperature solder. When the surge suppression component fails, the low temperature solder is melt owing to being passed through the power frequency fault current, the conductive metal member is disconnected from the metal bulge, the compression spring pushes the arc extinguishing component to move to obstruct the disconnected gap, and form an airflow to extinguish the electric arc between the conductive metal member and the metal bulge. The present invention provides a safer, more timely and reliable circuit protection.