128 results about "Beam pulse" patented technology

A process and system for processing a thin film sample are provided. In particular, a beam generator can be controlled to emit at least one beam pulse. The beam pulse is then masked to produce at least one masked beam pulse, which is used to irradiate at least one portion of the thin film sample. With the at least one masked beam pulse, the portion of the film sample is irradiated with sufficient intensity for such portion to later crystallize. This portion of the film sample is allowed to crystallize so as to be composed of a first area and a second area. Upon the crystallization thereof, the first area includes a first set of grains, and the second area includes a second set of grains whose at least one characteristic is different from at least one characteristic of the second set of grains. The first area surrounds the second area, and is configured to allow an active region of a thin-film transistor (“TFT”) to be provided at a distance therefrom.

X-ray pixel beam array systems and methods for electronically shaping radiation fields and modulating radiation field intensity patterns for radiotherapy are disclosed. One exemplary pre-clinical system may include addressable electron field emitters (102, 104) that are operable to emit a plurality of electron pixel beams (106, 108, 110). Each electron pixel beam may correspond to an x-ray target (124) and x-ray pixel beam collimation aperture (136, 138) to convert a portion of energy associated with the electron pixel beam to a corresponding x-ray pixel beam (140, 142). Further, the x-ray pixel beam array collimator (130) forms a one-to-one correspondence between individual electron pixel beam and its corresponding x-ray pixel beam. One exemplary clinical system may include a high-energy electron source (1203), an n-stage scanning system (1210), x-ray pixel beam targets (1212), and an x-ray pixel beam array collimator (1214). A controller (1206) may sequentially direct electron beam pulses to predetermined x-ray pixel targets and produce an electronically controlled radiation field direction, pattern; and intensity pattern.

A method of identifying an object in a laser beam illuminated scene based on material types comprises the steps of: emitting a pulsed beam of laser energy, each beam pulse comprising a plurality of different discrete wavelength emission components; illuminating a predetermined scene with the pulsed beam; receiving return laser pulses from objects within the illuminated scene, each return laser pulse comprising return components corresponding to the plurality of different discrete wavelength emission components; determining spectral reflectance values for the plurality of return components of each return laser pulse; determining a material type for each return laser pulse of the illuminated scene based on the plurality of reflectance values of the corresponding return pulse; indexing each determined material type to a position in the illuminated scene; and identifying an object in the illuminated scene based on material types and indexed positions thereof in the scene. A counterpart system for carrying out the method is also disclosed.

A process and system for processing a thin film sample, as well as the thin film structure are provided. In particular, a beam generator can be controlled to emit successive irradiation beam pulses at a predetermined repetition rate. Each irradiation beam pulse may be masked to define a first plurality of beamlets and a second plurality of beamlets. The first and second plurality of beamlets of each of the irradiation pulses being provided for impinging the film sample and having an intensity which is sufficient to at least partially melt irradiated portions of the section of the film sample. A particular portion of the section of the film sample is irradiated with the first beamlets of a first pulse of the irradiated beam pulses to melt first areas of the particular portion, the first areas being at least partially melted, leaving first unirradiated regions between respective adjacent ones of the first areas, and being allowed to resolidify and crystallize. After the irradiation of the particular portion with the first beamlets, the particular portion is again irradiated with the second beamlets of a second pulse of the irradiated beam pulses to melt second areas of the particular portion, the second areas being at least partially melted, leaving second unirradiated regions between respective adjacent ones of the second areas, and being allowed to resolidify and crystallize. The first irradiated and re-solidified areas and the second irradiated and re-solidified areas are intermingled with one another within the section of the film sample. In addition, the first areas correspond to first pixels, and the second areas correspond to second pixels.

A method for processing data in a radiation procedure includes obtaining operation data, and formatting the operation data into a set of image data, wherein the operation data comprises one or a combination of a gantry angle, a patient position, a patient orientation, radiation dose rate, radiation dose fraction, beam pulse rate, beam energy, time when beam was activated, time when beam was deactivated, and beam variation (if any) during an image readout. Also machine axis information, machine status info and operation data from other systems like for instance the RPM system may be included. A method of processing data in a radiation procedure includes obtaining operation data, obtaining an image data, and combining the operation data with the image data in substantially real time.

A method of identifying an object in a laser beam illuminated scene based on material types comprises the steps of: emitting a pulsed beam of laser energy, each beam pulse comprising a plurality of different discrete wavelength emission components; illuminating a predetermined scene with the pulsed beam; receiving return laser pulses from objects within the illuminated scene, each return laser pulse comprising return components corresponding to the plurality of different discrete wavelength emission components; determining spectral reflectance values for the plurality of return components of each return laser pulse; determining a material type for each return laser pulse of the illuminated scene based on the plurality of reflectance values of the corresponding return pulse; indexing each determined material type to a position in the illuminated scene; and identifying an object in the illuminated scene based on material types and indexed positions thereof in the scene. A counterpart system for carrying out the method is also disclosed.

A flash ladar system has a laser provided with beam focusing optics for directing a laser fan beam pulse to a scanning element that in turn directs the laser fan beam to a vertical region of space. Light reflected from an object in the vertical region of space is directed by a reflecting element to a sensor provided with a column of photosensitive pixels that connects to a charge storage matrix of non-photosensitive pixels. After an integration period electrical charges are shifted from the photosensitive region to an adjacent column in the charge storage region. The process of integrate and shift is repeated for multiple integration periods until the charge storage region is filled with charges whereupon a serial shift register removes the information to be processed by a data processor.

A process and system are provided for processing at least one section of each of a plurality of semiconductor film samples. In these process and system, the irradiation beam source is controlled to emit successive irradiation beam pulses at a predetermined predetermined repetition rate. Using such emitted beam pulses, at least one section of one of the semiconductor film samples is irradiated using a first sequential lateral solidification (“SLS”) technique and / or a first uniform small grained material (“UGS”) techniques to process the such sections) of the first sample. Upon the completion of the processing of this section of the first sample, the beam pulses are redirected to impinge at least one section of a second sample of the semiconductor film samples. Then, using the redirected beam pulses, such sections) of the second sample are irradiated using a second SLS technique and / or a second UGS technique to process the at least one section of the second sample. The first and second techniques can be different from one another or substantially the same.

A process and system for processing a thin film sample (e.g., a semiconductor thin film), as well as the thin film structure are provided. In particular, a beam generator can be controlled to emit at least one beam pulse. With this beam pulse, at least one portion of the film sample is irradiated with sufficient intensity to fully melt such section of the sample throughout its thickness, and the beam pulse having a predetermined shape. This portion of the film sample is allowed to resolidify, and the re-solidified at least one portion is composed of a first area and a second area. Upon the re-solidification thereof, the first area includes large grains, and the second area has a region formed through nucleation. The first area surrounds the second area and has a grain structure which is different from a grain structure of the second area. The second area is configured to facilitate thereon an active region of an electronic device.

Provided herein are systems and methods for operating a traveling wave linear accelerator to generate stable electron beams at two or more different intensities by varying the number of electrons injected into the accelerator structure during each pulse by varying the width of the beam pulse, i.e., pulse width. The electron beams may be used to generate x-rays having selected doses and energies, which may be used for cargo scanning or radiotherapy applications.

A process and system for processing a thin film sample, as well as the thin film structure are provided. In particular, a beam generator can be controlled to emit successive irradiation beam pulses at a predetermined repetition rate. Each irradiation beam pulse may be masked to define a first plurality of beamlets and a second plurality of beamlets. The first and second plurality of beamlets of each of the irradiation pulses being provided for impinging the film sample and having an intensity which is sufficient to at least partially melt irradiated portions of the section of the film sample. A particular portion of the section of the film sample is irradiated with the first beamlets of a first pulse of the irradiated beam pulses to melt first areas of the particular portion, the first areas being at least partially melted, leaving first unirradiated regions between respective adjacent ones of the first areas, and being allowed to resolidify and crystallize. After the irradiation of the particular portion with the first beamlets, the particular portion is again irradiated with the second beamlets of a second pulse of the irradiated beam pulses to melt second areas of the particular portion, the second areas being at least partially melted, leaving second unirradiated regions between respective adjacent ones of the second areas, and being allowed to resolidify and crystallize. The first irradiated and re-solidified areas and the second irradiated and re-solidified areas are intermingled with one another within the section of the film sample. In addition, the first areas correspond to first pixels, and the second areas correspond to second pixels.

The present invention relates to a pulsed beam particle accelerator which can be used for particle radiation therapy. More particular, a device and method are provided to control the number of particles within a beam pulse. The particle accelerator comprises means for varying the number of particles within each beam pulse of said pulsed ion beam from a minimum value to a maximum value as function of the value of a beam control parameter. For each particle irradiation the required number of particles for each beam pulse is controlled by defining a value for said beam control parameter based on calibration data.

A process and system are provided for processing at least one section of each of a plurality of semiconductor film samples. In these process and system, the irradiation beam source is controlled to emit successive irradiation beam pulses at a predetermined predetermined repetition rate. Using such emitted beam pulses, at least one section of one of the semiconductor film samples is irradiated using a first sequential lateral solidification (“SLS”) technique and / or a first uniform small grained material (“UGS”) techniques to process the such sections) of the first sample. Upon the completion of the processing of this section of the first sample, the beam pulses are redirected to impinge at least one section of a second sample of the semiconductor film samples. Then, using the redirected beam pulses, such sections) of the second sample are irradiated using a second SLS technique and / or a second UGS technique to process the at least one section of the second sample. The first and second techniques can be different from one another or substantially the same.

Provided herein are systems and methods for operating a traveling wave linear accelerator to generate stable electron beams at two or more different intensities by varying the number of electrons injected into the accelerator structure during each pulse by varying the width of the beam pulse, i.e., pulse width.

Described herein are embodiments of a method to control energy dose output from a laser-produced plasma extreme ultraviolet light system by adjusting timing of fired laser beam pulses. During stroboscopic firing, pulses are timed to lase droplets until a dose target of EUV has been achieved. Once accumulated EUV reaches the dose target, pulses are timed so as to not lase droplets during the remainder of the packet, and thereby prevent additional EUV light generation during those portions of the packet. In a continuous burst mode, pulses are timed to irradiate droplets until accumulated burst error meets or exceeds a threshold burst error. If accumulated burst error meets or exceeds the threshold burst error, a next pulse is timed to not irradiate a next droplet. Thus, the embodiments described herein manipulate pulse timing to obtain a constant desired dose target that can more precisely match downstream dosing requirements.

The present invention relates to a pulsed beam particle accelerator which can be used for particle radiation therapy. More particular, a device and method are provided to control the number of particles within a beam pulse. The particle accelerator comprises means for varying the number of particles within each beam pulse of said pulsed ion beam from a minimum value to a maximum value as function of the value of a beam control parameter. For each particle irradiation the required number of particles for each beam pulse is controlled by defining a value for said beam control parameter based on calibration data.