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35results about How to "Resist Composition" patented technology
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Positive photosensitive composition
InactiveUS20070003871A1High resolutionIncrease exposureOrganic chemistryOrganic compound preparationActinic RaysPhotochemistry
Owner:FUJIFILM CORP
Fluorine-containing cyclic compounds, fluorine-containing polymerizable monomers, fluorine-containing polymers resist compositions and patterning method
ActiveUS6858760B2High transparencyImproved in adhesion to substrateOrganic chemistryOrganic compound preparationHydrogenCyclic compound
A fluorine-containing cyclic compound is represented by the formula 1: wherein each of R1, R2 and R3 independently represents a hydrogen, alkyl group, fluorine, fluoroalkyl group or hexafluorocarbinol group,wherein at least one of the hexafluorocarbinol groups may partly or totally be protected with a protecting group, andwherein the protecting group is (a) a straight-chain, branched or cyclic hydrocarbon group having a carbon atom number of 1-25 or (b) an aromatic hydrocarbon group and optionally contains a fluorine atom, oxygen atom, nitrogen atom or carbonyl bond.
Owner:CENT GLASS CO LTD
Positive photosensitive composition
InactiveUS20050130060A1High resolutionIncrease exposureOrganic compound preparationRadiation applicationsActinic RaysPhotochemistry
A positive photosensitive composition comprises a compound capable of generating a specified sulfonic acid upon irradiation with one of an actinic ray and radiation and (B) a resin capable of decomposing under the action of an acid to increase the solubility in an alkali developer.
Owner:FUJIFILM CORP
Novel compound, polymer, resist composition, and patterning process
ActiveUS20050014092A1Improve powerIncrease resistanceOrganic chemistryPhotoprinting processesResistPhotoresist
There is disclosed a polymer containing at least a repeating unit represented by the following general formula (1), and the resist composition containing the polymer as a base resin, especially a chemically amplified resist composition. There can be provided a resist composition which has etching resistance in a practical use level, and is excellent in an adhesion property with a substrate and an affinity with a developer, and has a sensitivity and resolving power which is far excellent compared with a conventional one, wherein swelling is small at the time of development, especially for photolithography which uses a high-energy beam as a light source, and especially be provided a chemically amplified resist composition.
Owner:SHIN ETSU CHEM IND CO LTD
Positive resist composition
ActiveUS20050026074A1Excellent in defocus latitudeResist compositionRadiation applicationsSemiconductor/solid-state device manufacturingActinic RaysCarboxylic acid
A positive resist composition comprising (A) a resin containing at least one group that is decomposed by the action of an acid to generate an alkali-soluble group and (B) at least two compounds selected from (B1) a compound that generates an aliphatic or aromatic sulfonic acid substituted with at least one fluorine atom, (B2) a compound that generates an aliphatic or aromatic sulfonic acid that does not contain a fluorine atom, (B3) a compound that generates an aliphatic or aromatic carboxylic acid substituted with at least one fluorine atom and (B4) a compound that generates an aliphatic or aromatic carboxylic acid that does not contain a fluorine atom, as (B) a compound that generates an acid upon irradiation of an actinic ray or radiation, wherein the group that is decomposed by the action of an acid contained in the resin, (A) includes a group represented by formula (Y) defined in the specification.
Owner:FUJIFILM HLDG CORP +1
Positive resist composition for immersion lithography and method for forming resist pattern
ActiveUS20080090171A1Good lithography characteristicSuitable hydrophobicityPhotosensitive materialsRadiation applicationsSolubilityHydrogen atom
Provided are a positive resist composition for immersion lithography, and a method for forming a resist pattern using the same, wherein the positive resist composition comprises a resin component (A) that increases its alkali solubility under action of an acid, an acid generator component (B) that generates an acid upon exposure, and a resin component (C) containing a constituent unit (c1) represented by the following Chemical Formula 1: wherein R1 is a hydrogen atom or a methyl group; R2 and R3 are each independently represents a hydrogen atom or an alkyl group having 1 to 5 carbon atoms; n is an integer of 0 to 3; and Z is an aliphatic cyclic group having 4 to 12 carbon atoms, having a fluorine atom and / or a fluorinated alkyl group as a substituent.
Owner:TOKYO OHKA KOGYO CO LTD
Positive resist composition for use with electron beam, x-ray or EUV and pattern forming method using the same
ActiveUS20090202946A1Improve performanceResist compositionPhotosensitive materialsSemiconductor/solid-state device manufacturingOrganic solventActinic Rays
A positive resist composition for use with electron beam, X-ray or EUV and a pattern forming method using the positive resist composition are provided, the positive resist composition including: (A) a resin capable of decomposing under an action of an acid to increase a dissolution rate in an aqueous alkali solution; (B) a compound capable of generating an acid upon irradiation with actinic rays or radiation; (C) a basic compound; and (D) an organic solvent, wherein the entire solid content concentration in the resist composition is from 1.0 to 4.5 mass % and a ratio of (B) the compound capable of generating an acid upon irradiation with actinic rays or radiation is from 10 to 50 mass % based on the entire solid content.
Owner:FUJIFILM CORP
Positive resist composition and patterning process
ActiveUS8062828B2High resolutionIncrease roughnessPhotosensitive materialsRadiation applicationsPolymer scienceSulfonium
Owner:SHIN ETSU CHEM IND CO LTD
Positive resist composition and pattern forming method using the same
InactiveUS20080241752A1High sensitivityImprove performancePhotosensitive materialsOriginals for photomechanical treatmentTetramethylammonium hydroxideActinic Rays
A positive resist composition, includes: (A) a resin having a property of becoming soluble in an alkali developer under an action of an acid and having a phenolic hydroxyl group and a weight average molecular weight of 1,500 to 3,500; and (B) a compound capable of generating a sulfonic acid upon irradiation with actinic rays or radiation, wherein a ratio of dissolution rates of an exposed area and an unexposed area in an aqueous 2.38 wt % tetramethylammonium hydroxide at 23° C. under atmospheric pressure is in a range from 200 to 5,000 times, and a pattern forming method uses the composition.
Owner:FUJIFILM CORP
Positive resist composition
InactiveUS7198880B2Sufficient transparencyHigh sensitivityDiazo compound compositionsPhotosensitive materials for photomechanical apparatusPolymer scienceActinic Rays
A positive resist composition comprising:(A1) a resin containing at least one type of repeating unit represented by the specific formula and additionally containing at least one type of repeating unit represented by the specific formula, which increases the solubility in an alkali developing solution by the action of an acid, and(B) a compound which is capable of generating an acid by the action of actinic ray or radiation.
Owner:FUJIFILM HLDG CORP +1
Positive resist composition for immersion lithography and method for forming resist pattern
ActiveUS7494762B2Good lithography characteristicSuitable hydrophobicityPhotosensitive materialsRadiation applicationsPolymer scienceHydrogen atom
Provided are a positive resist composition for immersion lithography, and a method for forming a resist pattern using the same, wherein the positive resist composition comprises a resin component (A) that increases its alkali solubility under action of an acid, an acid generator component (B) that generates an acid upon exposure, and a resin component (C) containing a constituent unit (c1) represented by the following Chemical Formula 1:wherein R1 is a hydrogen atom or a methyl group; R2 and R3 are each independently represents a hydrogen atom or an alkyl group having 1 to 5 carbon atoms; n is an integer of 0 to 3; and Z is an aliphatic cyclic group having 4 to 12 carbon atoms, having a fluorine atom and / or a fluorinated alkyl group as a substituent.
Owner:TOKYO OHKA KOGYO CO LTD
Positive resist composition and method of forming resist pattern
ActiveUS20090233220A1Few defectGood lithographic propertyOrganic chemistryPhotosensitive materialsResistSolubility
Provided are a positive resist composition and a resist pattern forming method having fewer defects and superior lithographic characteristics. The positive resist composition includes a resin component (A) which has on a main chain a structural unit derived from an (α-lower alkyl)acrylate ester and exhibits increased alkali solubility under the action of an acid, and an acid generating component (B) which generates the acid upon irradiation with radiation, in which the resin component (A) is a copolymer having at least two structural units which is obtained by incorporating an acid when polymerizing at least one monomer for the production thereof.
Owner:TOKYO OHKA KOGYO CO LTD
Positive resist composition and pattern formation method using the same
ActiveUS7122589B2Resist compositionImprove performanceRadiation applicationsSemiconductor/solid-state device manufacturingSide chainRepeat unit
A positive resist composition comprising: (A) a resin having alicyclic hydrocarbon groups in side chains, containing specified two types of repeating units, which increases the solubility in an alkali developing solution by the action of an acid; and (B) a particular sulfonium compound having a specified structure and capable of generating an acid upon irradiation with an actinic ray or radiation.
Owner:FUJIFILM HLDG CORP +2
Positive Resist Composition and Method for Resist Pattern Formation
ActiveUS20080268375A1High sensitivityHigh resolutionPhotosensitive materialsRadiation applicationsSolubilityPolymer science
A positive-working resist composition of a wide level of DOF and a method for resist pattern formation are provided. This composition is a positive-working resist composition comprising a resin component (A) which, upon action by an acid, increases alkali solubility and an acid generating agent component (B) which produces an acid upon exposure. The component (A) is a copolymer comprising n (n=an integer of 4 to 6) types of constitutional units different from each other in structure, and the proportion of each constitutional unit in the copolymer is more than 0% by mole and not more than 100 / (n−1)% by mole.
Owner:TOKYO OHKA KOGYO CO LTD
Positive resist composition and pattern forming method using the same
ActiveUS20080241743A1Performance fine processingResist compositionRadiation applicationsDiazo compound compositionsActinic RaysChemical compound
A positive resist composition, includes: (B) a resin containing a repeating unit represented by formula (Ia) or (Ib) as defined in the specification, which decomposes under an action of an acid to increase a solubility of the resin (B) in an aqueous alkali solution; and (A) a compound capable of generating an acid upon irradiation with actinic rays or radiation, and a pattern forming method uses the composition.
Owner:FUJIFILM CORP
Positive resist composition
ActiveUS7261994B2Excellent in mask linearityResist compositionOrnamental textile articlesPhotosensitive materialsSulfonateResist
Owner:TOKYO OHKA KOGYO CO LTD
Positive resist composition
ActiveUS7157206B2Excellent in defocus latitudeResist compositionRadiation applicationsSemiconductor/solid-state device manufacturingPolymer scienceActinic Rays
Owner:FUJIFILM HLDG CORP +1
Positive resist composition
InactiveUS7138217B2Sufficient transparencyResistance against dryPhotosensitive materialsRadiation applicationsActinic RaysChemical compound
A positive resist composition comprises: (A) a resin capable of decomposing by the action of an acid to increase the solubility in an alkali developer; and (B) a compound capable of generating an acid upon irradiation with one of an actinic ray and a radiation, wherein the resin (A) contains a specified repeating unit.
Owner:FUJIFILM HLDG CORP +1
Positive resist composition
InactiveUS7255971B2Satisfactory in line edge roughnessResist compositionPhotosensitive materialsRadiation applicationsActinic RaysOrganic chemistry
A positive resist composition comprising the components of: (A) a compound capable of generating an acid upon irradiation with one of an actinic ray and a radiation; (B) a resin that is insoluble or slightly soluble in alkalis, but becomes alkali-soluble under an action of an acid; (C) a basic compound; and (D) a compound comprising at least three hydroxyl groups or at least three substituted hydroxyl groups, and comprising at least one cyclic structure.
Owner:FUJIFILM HLDG CORP +1
High resolution silicon-containing resist
InactiveUS20060275694A1Resist compositionBlur-free resolutionPhotosensitive materialsPhotomechanical apparatusResistLithographic artist
Non-chemically amplified radiation sensitive resist compositions containing silicon are especially useful for lithographic applications, especially E-beam lithography. More particularly, radiation-sensitive resist compositions comprising a polymer having at least one silicon-containing moiety and at least one radiation-sensitive moiety cleavable upon radiation exposure to form aqueous base soluble moiety can be used to pattern sub-50 nm features with little or no blur.
Owner:IBM CORP
Monomer, polymer, resist composition, and patterning process
A monomer (1) is prepared by reacting a compound (9) with a base or metal to form a metal enolate reagent, and reacting the metal enolate reagent with an acyloxyketone compound (8). A polymer derived from the monomer is used as base resin to formulate a resist composition, which is shelf stable and displays a high dissolution contrast, controlled acid diffusion and low roughness in forming positive pattern via alkaline development and in forming negative pattern via organic solvent development.
Owner:SHIN ETSU CHEM IND CO LTD
Method of preparing polymer compound
ActiveUS20180022916A1Resist pattern dimensionResist compositionPhotomechanical apparatusCoatingsCompound aPolymer science
A method for preparing a polymer compound including copolymerizing a monomer (m0-1) and a monomer (m0-2) to obtain a first polymer compound and causing the first polymer compound and an acid component to react with each other to obtain a second polymer compound. In the formulae, R1 and R2 are each a hydrogen atom, an alkyl group having 1 to 5 carbon atoms and a halogenated alkyl group having 1 to 5 carbon atoms, Va01 is a divalent hydrocarbon group which may have an ether bond, na01 is an integer of 0 to 2, Ra10 is a tertiary alkyl ester-type acid dissociable group, Va02 is a divalent linking group containing a heteroatom, or a single bond, Ra07 is a monovalent organic group, na021 is an integer of 0 to 3, Ra20 is an acid dissociable group, and na022 is an integer of 1 to 3.
Owner:TOKYO OHKA KOGYO CO LTD
Positive resist composition and pattern forming method using the same
InactiveUS8092977B2Improve performanceResist compositionPhotosensitive materialsPhotomechanical apparatusPolymer scienceOrganic chemistry
Owner:FUJIFILM CORP
Positive resist composition
ActiveUS7435527B2Increase roughnessLess formationSemiconductor/solid-state device manufacturingPhotosensitive material auxillary/base layersActinic RaysChemical compound
A positive resist composition comprising (A) a compound that generates an acid upon irradiation of an actinic ray or radiation, (B) a resin that is insoluble or hardly soluble in an alkali developing solution but becomes soluble in the alkali developing solution by the action of an acid, and (C) a compound having at least one group that is decomposed with an acid to generate a carboxylic acid and at least three groups selected from hydroxy group and substituted hydroxy group.
Owner:FUJIFILM CORP +1
High resolution silicon-containing resist
InactiveUS7659050B2Resist compositionBlur-free resolutionPhotosensitive materialsPhotomechanical apparatusResistRadiation sensitivity
Non-chemically amplified radiation sensitive resist compositions containing silicon are especially useful for lithographic applications, especially E-beam lithography. More particularly, radiation-sensitive resist compositions comprising a polymer having at least one silicon-containing moiety and at least one radiation-sensitive moiety cleavable upon radiation exposure to form aqueous base soluble moiety can be used to pattern sub-50 nm features with little or no blur.
Owner:IBM CORP
Positive resist composition
ActiveUS20050227170A1Excellent in mask linearityResist compositionOrnamental textile articlesRadiation applicationsSulfonateResist
A positive resist composition having excellent mask linearity is provided. This composition is a positive resist composition comprising a base resin component (A) and an acid generator component (B) generating an acid under exposure, wherein the base resin component (A) is a silicone resin and the acid generator component (B) contains an onium salt-based acid generator (B1) containing a perfluoroalkyl sulfonate ion having 3 or 4 carbon atoms as an anion.
Owner:TOKYO OHKA KOGYO CO LTD
Positive resist composition
InactiveUS7144674B2Resist compositionImproved profilePhotosensitive materialsRadiation applicationsResistAqueous solution
The present invention provides a positive resist composition comprising(A) at least one resin selected from the group consisting of{circle around (1)} resin which is itself insoluble or poorly soluble in an alkali aqueous solution but cause a chemical change by the action of an acid to become soluble in an alkali aqueous solution with a proviso that the resin is not novolak resin and② alkali-soluble resin,(B) novolak resin containing protective group which can be dissociated by the action of an acid and(C) an acid generator.
Owner:SUMITOMO CHEM CO LTD
Positive resist composition for use with electron beam, X-ray or EUV and pattern forming method using the same
ActiveUS8426103B2Improve performanceResist compositionPhotosensitive materialsSemiconductor/solid-state device manufacturingActinic RaysTotal solid content
Owner:FUJIFILM CORP
Compound, polymer, resist composition, and patterning process
ActiveUS7169541B2Improve the immunityHigh yieldOrganic chemistryPhotoprinting processesResistPhotolithography
There is disclosed a polymer containing at least a repeating unit represented by the following general formula (1), and the resist composition containing the polymer as a base resin, especially a chemically amplified resist composition. There can be provided a resist composition which has etching resistance in a practical use level, and is excellent in an adhesion property with a substrate and an affinity with a developer, and has a sensitivity and resolving power which is far excellent compared with a conventional one, wherein swelling is small at the time of development, especially for photolithography which uses a high-energy beam as a light source, and especially be provided a chemically amplified resist composition
Owner:SHIN ETSU CHEM IND CO LTD
Positive resist composition and method for resist pattern formation
ActiveUS8029968B2Resist compositionHigh resolutionPhotosensitive materialsRadiation applicationsResistSolubility
A positive resist composition with a broad DOF and a method for resist pattern formation are provided. This composition is a positive resist composition which includes a resin component (A) that exhibits increased alkali solubility under the action of acid and an acid generator component (B) that generates acid upon exposure, wherein the component (A) is a copolymer that contains n [wherein, n is an integer from 4 to 6] structural units with mutually different structures, and the proportion of each structural unit within the copolymer is greater than 0 mol % but no higher than 100 / (n−1) mol %.
Owner:TOKYO OHKA KOGYO CO LTD
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