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32results about How to "Large fill factor" patented technology

Charged particle system comprising a manipulator device for manipulation of one or more charged particle beams

The invention relates to a charged particle system such as a multi beam lithography system, comprising a manipulator device for manipulation of one or more charged particle beams, wherein the manipulator device comprises at least one through opening in the plane of the planar substrate for passing at least one charged particle beam there through. Each through opening is provided with electrodes arranged in a first set of multiple first electrodes along a first part of a perimeter of said through opening and in a second set of multiple second electrodes along a second part of said perimeter. An electronic control circuit is arranged for providing voltage differences the electrodes in dependence of a position of the first and second electrode along the perimeter of the through opening.
Owner:ASML NETHERLANDS BV

Imaging device and apparatus installed with the same

An imaging device includes a light source layer having imaging light source units for radiating the imaging light containing a first wavelength on an object to be imaged, a detection layer having detection elements for detecting the light of the first wavelength radiated from the light source units, and a light-blocking unit interposed between the light source layer and the detection layer. The light source layer is held between the detection layer and the object to be imaged. The light-blocking unit is arranged in such a manner as to block the direct radiation of at least part of the light radiated from the light source units to the detection elements.
Owner:HITACHI LTD

Photodiode array and method of making the same

A photodiode array comprises a semiconductor substrate formed with an array of a plurality of pn junction type photodiodes on a light incident surface side, the surface opposite from the incident surface in the semiconductor substrate being made of a (100) plane; a through hole, formed in an area held between the photodiodes, penetrating through the semiconductor substrate from the incident surface side to the opposite surface side; and a conductive layer extending from the incident surface to the opposite surface by way of a wall surface of the through hole; the through hole being formed by connecting a vertical hole part formed substantially perpendicular to the incident surface on the incident surface side, and a pyramidal hole part formed like a quadrangular pyramid on the opposite surface side to each other within the semiconductor substrate; the pyramidal hole part having a wall surface formed as a (111) plane.
Owner:HAMAMATSU PHOTONICS KK

Number resolving superconducting nanowire photon detector on multiple surfaces of a substrate

ActiveUS8577430B1Highly efficient number resolving capabilityIncrease the number ofSuperconductor detailsMachines/enginesElectricityNanowire
A superconducting nanowire photon detector apparatus comprising detection, insulating, and substrate layers. The insulating layer provides electrical isolation of a plurality of individual detector elements from the interconnection network fabricated on the substrate layer except where electrical interconnection between the inputs and outputs of each detector element and the interconnection network is intended.
Owner:AIR FORCE RES LAB RIJ

Method and apparatus for optimizing the target intensity distribution transmitted from a fiber coupled array

Encircled far field energy is substantially increased by modifying the near field energy distribution of radiation from each fiber in an emitting array. Each beamlet output from a fiber is modified to have a generally uniform cross-sectional energy distribution, using a pair of aspheric optical elements selected for that purpose. The optical elements may be refractive or reflective. The modified beamlets combine to form a composite output beam with a generally uniform energy distribution. Preferably, the composite beam is subject to an array-wide inverse transformation to a near-Gaussian distribution, further enhancing the encircled far field energy and providing a more efficient high power laser source. Further gains in efficiency are achieved by selecting a fiber bundle pattern, lens array pattern and lens shape that together result in a high fill factor.
Owner:NORTHROP GRUMMAN SYST CORP

Charged particle system comprising a manipulator device for manipulation of one or more charged particle beams

A charged particle system such as a multi beam lithography system. A manipulator device manipulates one or more charged particle beams. The manipulator device includes at least one through opening in the plane of the planar substrate for passing at least one charged particle. Each through opening is provided with electrodes arranged in a first set of multiple first electrodes along a first part of a perimeter of the through opening and in a second set of multiple second electrodes along a second part of the perimeter. An electronic control circuit is arranged for providing voltage differences the electrodes in dependence of a position of the first and second electrode along the perimeter of the through opening.
Owner:ASML NETHERLANDS BV

Method and apparatus for optimizing the target intensity distribution transmitted from a fiber coupled array

Encircled far field energy is substantially increased by modifying the near field energy distribution of radiation from each fiber in an emitting array. Each beamlet output from a fiber is modified to have a generally uniform cross-sectional energy distribution, using a pair of aspheric optical elements selected for that purpose. The optical elements may be refractive or reflective. The modified beamlets combine to form a composite output beam with a generally uniform energy distribution. Preferably, the composite beam is subject to an array-wide inverse transformation to a near-Gaussian distribution, further enhancing the encircled far field energy and providing a more efficient high power laser source. Further gains in efficiency are achieved by selecting a fiber bundle pattern, lens array pattern and lens shape that together result in a high fill factor.
Owner:NORTHROP GRUMMAN SYST CORP

Assembly to perform imaging on rodents

InactiveUS20120330130A1Eliminate remaining animal movementLarge fill factorRespiratory masksAnimal housingNon destructiveEngineering
An imaging device for imaging an anaesthetized animal such as a rodent (rats or mice or other animals), with the device having a split array coil capable of providing at least two channels for use in a restraining assembly with animal bed for magnetic resonance imaging (MRI) the animal in real-time in a non-destructive manner.
Owner:RAPID BIOMEDIZINISCHE GERATE RAPID BIOMEDICAL

Compact active pixel with low-noise snapshot image formation

A low-noise active pixel circuit is disclosed that efficiently suppresses reset (kTC) noise by using a compact preamplifier consisting of a photodetector and only four MOSFETs of identical polarity, in conjunction with ancillary circuits located on an imager's periphery. The supporting circuits help the simplified pixel circuit to synchronously acquire (i.e., take a snapshot) an image across an imaging array, read the signal with low noise, and efficiently reset the pixel with low noise.
Owner:SAMSUNG ELECTRONICS CO LTD

Light-receiving device and method for producing the same

A light-receiving device includes a light-receiving layer having an undoped multi-quantum well structure; a cap layer disposed on the light-receiving layer, the cap layer including a semiconductor layer doped with a p-type impurity; a mesa structure including the cap layer; a p-type region extending from the p-type semiconductor layer toward the light-receiving layer, the p-type region including the p-type impurity diffused from the semiconductor layer in the mesa structure; a p-n junction formed at an end of the p-type region; and an electrode disposed on the cap layer of the mesa structure. The mesa structure is defined by a trench surrounding the mesa. The trench has a bottom that reaches the vicinity of an upper surface of the light-receiving layer. The p-n junction is located in the light-receiving layer or at the boundary between the light-receiving layer and the cap layer disposed on the light-receiving layer.
Owner:SUMITOMO ELECTRIC IND LTD

Imaging device and apparatus installed with the same

An imaging device includes a light source layer having imaging light source units for radiating the imaging light containing a first wavelength on an object to be imaged, a detection layer having detection elements for detecting the light of the first wavelength radiated from the light source units, and a light-blocking unit interposed between the light source layer and the detection layer. The light source layer is held between the detection layer and the object to be imaged. The light-blocking unit is arranged in such a manner as to block the direct radiation of at least part of the light radiated from the light source units to the detection elements.
Owner:HITACHI LTD

Rocker-arm actuator for a segmented mirror

InactiveUS20060220492A1Reduces potential physical interferenceLarge fill factorElectrostatic motorsOptical elementsFill factorEngineering
A MEMS device having a movable plate supported on a substrate by a support structure that is hidden under the plate and yet which can be implemented to enable rotation of the plate with respect to the substrate about a rotation axis lying at the plate surface. As a result, the support structure does not take up any area within the plane of the plate, while enabling rotation of the plate, during which the plate does not substantially move sideways. The latter property reduces potential physical interference between neighboring plates in an arrayed MEMS device and enables implementation of a segmented mirror having relatively narrow gaps between adjacent segments and, thus, a relatively large fill factor, e.g., at least 98%.
Owner:LUCENT TECH INC

Photodetector focal plane array systems and methods

A photodetector focal plane array system, comprising: a substrate comprising a plurality of photosensitive regions; and a microcomponent disposed adjacent to each of the plurality of photosensitive regions operable for receiving incident radiation and directing a photonic nanojet into the associated photosensitive region. Optionally, each of the microcomponents comprises one of a microsphere and a microcylinder. Each of the microcomponents has a diameter of between between ˜λ and ˜100λ, where λ is the wavelength of the incident radiation. Each of the microcomponents is manufactured from a dielectric or semiconductor material. Each of the microcomponents has an index of refraction of between ˜1.4 and ˜3.5. Optionally, high-index components can be embedded in a lower index material. The microcomponents form an array of microcomponents disposed adjacent to the substrate.
Owner:THE UNIV OF NORTH CAROLINA AT CHAPEL HILL +1

Image sensor with SOI substrate

An imager pixel utilizing a silicon-on-insulator substrate, a photodiode in said substrate below the buried oxide, and a dual contact to said photodiode and methods of forming said imager pixel. The photodiode has an increased fill factor due to its increased size relative to the pixel.
Owner:APTINA IMAGING CORP

Radio-voltaic nuclear battery based on perovskite crystals

The invention relates to a radio-voltaic nuclear battery based on perovskite crystals and a preparation method thereof. A nuclear battery structure sequentially comprises a radiation source, an anodeelectrode, a p-type perovskite layer, an intrinsic perovskite layer, an n-type perovskite layer and a cathode from top to bottom. In the nuclear battery structure, the radiation source emits high-energy particles such as beta particles, X rays and gamma rays, the high-energy particles are absorbed in the high-thickness intrinsic perovskite layer, and photo-induced electron / hole pairs are generatedthrough a photoelectric effect. The p-type perovskite layer, the intrinsic perovskite layer and the n-type perovskite layer form a PIN structure, and the PIN structure forms a depletion layer. Due toa built-in electric field of the depletion layer, photo-induced electrons / hole pairs generated by the high-energy particles are separated and drift towards the cathode and the anode respectively to form open-circuit voltage or short-circuit current.
Owner:SOUTHEAST UNIV
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