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40results about "Galvano-magnetic amplifiers" patented technology

Transpinnor-based transmission line transceivers and applications

Transceiver components for a transmission line are described. A driver includes a first network of thin-film elements exhibiting giant magnetoresistance, and a first input conductor inductively coupled to at least one of the thin-film elements in the first network. At least one dimension of each thin-film element in the first network is configured with reference to the characteristic impedance of the transmission line. A receiver includes a second network of thin-film elements exhibiting giant magnetoresistance, and a second input conductor inductively coupled to at least one of the thin-film elements in the second network. A termination impedance in series with the second input conductor has a value relating to the characteristic impedance of the transmission line.
Owner:INTEGRATED MAGNETOELECTRONICS

TMR/GMR amplifier with input current compensation

An amplifier system with feedback current cancellation comprises an amplifier with an input, an output, and at least one stage. A feedback network communicates with the input and output of the amplifier. A feedback current cancellation module that provides a first current at the input of the amplifier that substantially cancels a second current provided at the input of the amplifier by the feedback network.
Owner:MARVELL ASIA PTE LTD

Magnetic logic unit (MLU) cell and amplifier having a linear magnetic signal

A magnetic logic unit (MLU) cell includes a first and second magnetic tunnel junction, each including a first magnetic layer having a first magnetization, a second magnetic layer having a second magnetization, and a barrier layer; and a field line for passing a field current such as to generate an external magnetic field adapted to adjust the first magnetization. The first and second magnetic layers and the barrier layer are arranged such that the first magnetization is magnetically coupled antiparallel with the second magnetization through the barrier layer. The MLU cell also includes a biasing device arranged for applying a static biasing magnetic field oriented substantially parallel to the external magnetic field such as to orient the first magnetization at about 90° relative to the second magnetization, the first and second magnetizations being oriented symmetrically relative to the direction of the external magnetic field.
Owner:CROCUS TECHNOLOGY
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