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51 results about "Sulfonium Compounds" patented technology

Sulfur compounds in which the sulfur atom is attached to three organic radicals and an electronegative element or radical.

Composition and method for treating semiconductor substrate surface

ActiveUS20110118165A1Prevent metalLess aggressive toward metal containing substrateNon-surface-active detergent compositionsSemiconductor/solid-state device manufacturingSolventPhotoresist
The present invention is directed to compositions and method of use for treating semiconductor substrate comprising a sulfonium compound and a nucleophilic amine in the fabrication of electronic devices. Optionally, the said composition further comprises a chelating agent, and solvent. The pH of the said solution can be adjusted with the addition of acid or base. The semiconductor manufacturing processes include steps for post etch residue, photoresist removal and steps during chemical mechanical planarization and post chemical mechanical planarization.
Owner:LASERWORT

Sulfonium compound, photoacid generator, and resist composition

A sulfonium compound represented by the following formula (1), a photoacid generator containing the sulfonium compound, and a resist composition containing the photoacid generator are provided:wherein X represents an electron donor group; R1 and R2 each independently represent an alkyl group or the like; R4 to R6 each independently represent an alkyl group, or the like; R3 represents a cyclic alkenediyl group or the like; and −A represents an anion. The sulfonium compound has a photon yield that is controllable by introducing different absorbers to the cation region in one molecule, can address the inconvenience of using a mixture of different photoacid generators when the sulfonium compound is applied as a photoacid generator, has excellent miscibility in a resist, and has enhanced resolution and line edge roughness.
Owner:SK MATERIALS PERFORMANCE CO LTD

Acid generators and photoresists comprising same

Acid generator compounds are provided that are particularly useful as photoresist composition components. Preferred acid generators include cyclic sulfonium compounds that comprise a covalently linked acid-labile group.
Owner:ROHM & HAAS ELECTRONICS MATERIALS LLC

Negative resist composition and resist pattern forming process

A negative resist composition comprising (A) a sulfonium compound of betaine type and (B) a polymer is provided. The resist composition is effective for controlling acid diffusion during the exposure step, exhibits a very high resolution during pattern formation, and forms a pattern with minimal LER.
Owner:SHIN ETSU CHEM IND CO LTD

Positive resist composition, resist pattern forming process, and photomask blank

A positive resist composition comprising a polymer adapted to be decomposed under the action of acid to increase its solubility in alkaline developer and a sulfonium compound of specific structure has a high resolution. When the resist composition is processed by lithography, a pattern with minimal LER can be formed.
Owner:SHIN ETSU CHEM IND CO LTD

Resin composition for optical stereolithography

A resin composition for optical stereolithography including a cation-polymerizable organic compound (A), a radical polymerizable organic compound (B), a cationic polymerization initiator (C) and a radical polymerization initiator (D) which is characterized by including, as a cationic polymerization initiator (C), an aromatic sulfonium compound (C-1) represented by the following general formula (C-1):(in the above general formula (C-1), R1, R2 and R3 represents a monovalent organic group, Rf represents a fluoroalkyl group, m is the same number as the cationic charge of the “cation [S+(R1) (R2) (R3)]”, n is an integer in the range of 0 to 6) as well as an aromatic thiol compound (E) represented by the following general formula (E):R4—(—SH)p   (E)(wherein, R4 represents a mono- or di-valent aromatic hydrocarbon which may optionally have a substituent, p is an integer of 1 or 2.)
Owner:CMET

Resist composition containing novel sulfonium compound, pattern-forming method using the resist composition, and novel sulfonium compound

A resist composition includes (A) a compound represented by the following formula (I):wherein each of R1 to R13 independently represents a hydrogen atom or a substituent, provided that at least one of R1 to R13 is a substituent containing an alcoholic hydroxyl group; Z represents a single bond or a divalent linking group; and X− represents an anion containing a proton acceptor functional group.
Owner:FUJIFILM CORP

Photoresist composition and method of forming a pattern using same

A photoresist composition for preventing exposing failures and a method of forming a pattern using the same are disclosed. The photoresist composition preferably comprises about 0.1% to about 0.5% by weight of a photo acid generator, and about 2% to about 10% by weight of a polymer resin, the PAG including a monophenyl sulfonium compound, a triphenyl sulfonium compound or a mixture thereof. The footing phenomenon and the top loss of a pattern are sufficiently prevented.
Owner:SAMSUNG ELECTRONICS CO LTD

Photoresist composition

A photoresist composition comprises an acid-sensitive polymer, and a cyclic sulfonium compound having the formula:(Ra)1—(Ar)—S+(—CH2—)m·−O3S—(CRb2)n-(L)p-Xwherein each Ra is independently a substituted or unsubstituted C1-30 alkyl group, C6-30 aryl group, C7-30 aralkyl group, or combination comprising at least one of the foregoing, Ar is a monocyclic, polycyclic, or fused polycyclic C6-30 aryl group, each Rb is independently H, F, a linear or branched C1-10 fluoroalkyl or a linear or branched heteroatom-containing C1-10 fluoroalkyl, L is a C1-30 linking group optionally comprising a heteroatom comprising O, S, N, F, or a combination comprising at least one of the foregoing heteroatoms, X is a substituted or unsubstituted, C5 or greater monocyclic, polycyclic or fused polycyclic cycloaliphatic group, optionally comprising a heteroatom comprising O, S, N, F, or a combination comprising at least one of the foregoing, and 1 is an integer of 0 to 4, m is an integer of 3 to 20, n is an integer of 0 to 4, and p is an integer of 0 to 2.
Owner:ROHM & HAAS ELECTRONICS MATERIALS LLC

Sulfonium compound, photo-acid generator, and method for manufacturing the same

ActiveUS20120172606A1High resolutionUniform and excellent compatibility with other componentsOrganic chemistryOrganic compound preparationResistSulfonium Compounds
A sulfonium compound represented by formula (1), a photo-acid generator, and a method for producing a sulfonium compound are provided:wherein X represents an electron-donating group; R1 and R2 each represent an alkyl group, a cycloalkyl group, or the like; R3 and R4 each represent an arylene group or a heteroarylene group; R5 and R6 each represent an alkyl group, a cycloalkyl group, or the like; and A− and B− are anions that are different from each other. The sulfonium compound, when used as a photo-acid generator, can produce a uniform and excellent resist pattern.
Owner:SK MATERIALS PERFORMANCE CO LTD

Sulfonium compound, making method, resist composition, and pattern forming process

ActiveUS10248022B2Satisfactory acid diffusion control (or quencher) functionEnhance the imageOrganic chemistrySemiconductor/solid-state device manufacturingResistLithographic artist
A sulfonium compound having formula (1) exerts a satisfactory acid diffusion control function wherein R1, R2 and R3 are a C1-C20 monovalent hydrocarbon group which may contain a heteroatom, p=0-5, q=0-5, and r=0-4. A resist composition comprising the sulfonium compound is processed by lithography to form a resist pattern with improved resolution, LWR, MEF and CDU.
Owner:SHIN ETSU CHEM IND CO LTD

Chemically Amplified Positive Resist Composition and Resist Pattern Forming Process

A positive resist composition comprising a polymer adapted to be decomposed under the action of acid to increase its solubility in alkaline developer and a sulfonium compound of formula (A) has a high resolution. When the resist composition is processed by lithography, a pattern with minimal LER can be formed.
Owner:SHIN ETSU CHEM IND CO LTD

Sulfonium compound, resist composition, and patterning process

A sulfonium salt containing an acid-eliminatable substituent group which is effective for improving contrast is highly soluble and uniformly dispersible. A resist composition comprising the sulfonium salt as photoacid generator forms a pattern with a high resolution, rectangularity, and reduced LWR.
Owner:SHIN ETSU CHEM IND CO LTD

Chemically amplified negative resist composition and resist pattern forming process

A negative resist composition comprising a sulfonium compound having formula (A) and a base polymer is provided. The resist composition exhibits a high resolution during pattern formation and forms a pattern with minimal LER.
Owner:SHIN ETSU CHEM IND CO LTD

Drug carrier based on sulfonium lipidosome structure and preparation method and application of drug carrier

The invention relates to the technical field of medicine, in particular to a sulfonium compound shown as a general formula (A), and discloses a preparation method of the compound. The compound is poly-condensed with genes to form a nanometer compound with the particle size of 100-300 nm and Zeta potential of +20-+40. The gene loading capability of the sulfonium compound enables the sulfonium compound to have potential application in gene transfer.
Owner:HEILONGJIANG BAYI AGRICULTURAL UNIVERSITY

Sulfonium compound, positive resist composition, and resist pattern forming process

A novel sulfonium compound has formula (A). A positive resist composition comprising a polymer and a quencher containing the sulfonium compound is improved in resolution and LER during pattern formation and has storage stability. In formula (A), R1, R2, R3, and R4 are independently a C1-C20 monovalent hydrocarbon group, p is an integer of 0-5, q is an integer of 0-5, and r is an integer of 0-4.
Owner:SHIN ETSU CHEM IND CO LTD

Radiation-sensitive resin composition, method for forming a resist pattern and sulfonium compound

A radiation-sensitive resin composition includes a sulfonium compound represented by a general formula (1), and a first polymer that serves as a base resin. R represents a group represented by a general formula (2). n1 to n3 each independently represent an integer of 0 to 5 and n1+n2+n3≧1. X− represents an anion. The sulfonium compound is preferably a compound represented by a following general formula (1-1).
Owner:JSR CORPORATIOON
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