51 results about "Sulfonium Compounds" patented technology

Acid generator compounds are provided that are particularly useful as photoresist composition components. Preferred acid generators include cyclic sulfonium compounds that comprise a covalently linked acid-labile group.

A negative resist composition comprising (A) a sulfonium compound of betaine type and (B) a polymer is provided. The resist composition is effective for controlling acid diffusion during the exposure step, exhibits a very high resolution during pattern formation, and forms a pattern with minimal LER.

A resist composition includes (A) a compound represented by the following formula (I):wherein each of R1 to R13 independently represents a hydrogen atom or a substituent, provided that at least one of R1 to R13 is a substituent containing an alcoholic hydroxyl group; Z represents a single bond or a divalent linking group; and X− represents an anion containing a proton acceptor functional group.

A negative resist composition comprising (A) a sulfonium compound of betaine type and (B) a polymer is provided. The resist composition is effective for controlling acid diffusion during the exposure step, exhibits a very high resolution during pattern formation, and forms a pattern with minimal LER.

A sulfonium compound having formula (1) is provided wherein R1, R2 and R3 are a C1-C20 monovalent hydrocarbon group which may contain a heteroatom, p=0-5, q=0-5, and r=0-4. A resist composition comprising the sulfonium compound is processed by lithography to form a resist pattern with improved LWR and pattern collapse.

A sulfonium salt containing an acid-eliminatable substituent group which is effective for improving contrast is highly soluble and uniformly dispersible. A resist composition comprising the sulfoniumsalt as photoacid generator forms a pattern with a high resolution, rectangularity, and reduced LWR.

A sulfonium compound having formula (1) exerts a satisfactory acid diffusion control function wherein R1, R2 and R3 are a C1-C20 monovalent hydrocarbon group which may contain a heteroatom, p=0-5, q=0-5, and r=0-4. A resist composition comprising the sulfonium compound is processed by lithography to form a resist pattern with improved resolution, LWR, MEF and CDU.

One aspect of the present invention relates to a method of preparing radiofluorinated substituted alkyl, cycloalkyl, aryl, and alkenyl compounds. In a preferred embodiment, potassium fluoride-18 is used. Another aspect of the invention relates to arylammonium compounds containing fluorine-18 that are useful as imaging agents. In certain embodiments, the ammonium compound is a tetraaryl ammonium salt. Another aspect of the invention relates to arylsulfonium compounds containing fluorine-18 that are useful as imaging agents. In certain embodiments, the sulfonium compound is a triaryl sulfonium salt. Another aspect of the present invention relates to a method of obtaining a positron emission image of a mammal, comprising the steps of administering to a mammal a compound of the invention, and acquiring a positron emission spectrum of the mammal.

One aspect of the present invention relates to a method of preparing radiofluorinated substituted alkyl, cycloalkyl, aryl, and alkenyl compounds. In a preferred embodiment, potassium fluoride-18 is used. Another aspect of the invention relates to arylammonium compounds containing fluorine-18 that are useful as imaging agents. In certain embodiments, the ammonium compound is a tetraaryl ammonium salt. Another aspect of the invention relates to arylsulfonium compounds containing fluorine-18 that are useful as imaging agents. In certain embodiments, the sulfonium compound is a triaryl sulfonium salt. Another aspect of the present invention relates to a method of obtaining a positron emission image of a mammal, comprising the steps of administering to a mammal a compound of the invention, and acquiring a positron emission spectrum of the mammal.

A photoresist composition comprises an acid-sensitive polymer, and a cyclic sulfonium compound having the formula:(Ra)1—(Ar)—S+(—CH2—)m·−O3S—(CRb2)n-(L)p-Xwherein each Ra is independently a substituted or unsubstituted C1-30 alkyl group, C6-30 aryl group, C7-30 aralkyl group, or combination comprising at least one of the foregoing, Ar is a monocyclic, polycyclic, or fused polycyclic C6-30 aryl group, each Rb is independently H, F, a linear or branched C1-10 fluoroalkyl or a linear or branched heteroatom-containing C1-10 fluoroalkyl, L is a C1-30 linking group optionally comprising a heteroatom comprising O, S, N, F, or a combination comprising at least one of the foregoing heteroatoms, X is a substituted or unsubstituted, C5 or greater monocyclic, polycyclic or fused polycyclic cycloaliphatic group, optionally comprising a heteroatom comprising O, S, N, F, or a combination comprising at least one of the foregoing, and 1 is an integer of 0 to 4, m is an integer of 3 to 20, n is an integer of 0 to 4, and p is an integer of 0 to 2.

The invention relates to a chemically amplified positive resist composition and a resist pattern forming process. A positive resist composition comprising a polymer adapted to be decomposed under theaction of acid to increase its solubility in alkaline developer and a sulfonium compound of formula (A) has a high resolution. When the resist composition is processed by lithography, a pattern with minimal LER can be formed.

A sulfonium compound represented by formula (1), a photo-acid generator, and a method for producing a sulfonium compound are provided:wherein X represents an electron-donating group; R1 and R2 each represent an alkyl group, a cycloalkyl group, or the like; R3 and R4 each represent an arylene group or a heteroarylene group; R5 and R6 each represent an alkyl group, a cycloalkyl group, or the like; and A− and B− are anions that are different from each other. The sulfonium compound, when used as a photo-acid generator, can produce a uniform and excellent resist pattern.

A resist composition is provided that yields fine resolution, and improved levels of line edge roughness and depth of focus. This composition includes a resin component (A) that undergoes a change in alkali solubility under the action of acid, and an acid generator component (B) that generates acid on exposure, wherein the component (A) is a resin with a weight average molecular weight of no more than 8,000 containing structural units (a) derived from a (meth)acrylate ester, and the component (B) includes at least one sulfonium compound represented by a general formula (b-1) or a general formula (b-2) shown below.

A sulfonium compound represented by the following formula (1), a photoacid generator containing the sulfonium compound, and a resist composition containing the photoacid generator are provided:wherein X represents an electron donor group; R1 and R2 each independently represent an alkyl group or the like; R4 to R6 each independently represent an alkyl group, or the like; R3 represents a cyclic alkenediyl group or the like; and −A represents an anion. The sulfonium compound has a photon yield that is controllable by introducing different absorbers to the cation region in one molecule, can address the inconvenience of using a mixture of different photoacid generators when the sulfonium compound is applied as a photoacid generator, has excellent miscibility in a resist, and has enhanced resolution and line edge roughness.

A negative resist composition comprising a sulfonium compound having formula (A) and a base polymer is provided. The resist composition exhibits a high resolution during pattern formation and forms a pattern with minimal LER.