Method for manufacturing thin film on substrate

Abstract

The present invention provides a method for manufacturing a thin film on a substrate. The method comprises the following steps that: an original substrate is provided; an ion separation layer is formed in the original substrate by using an ion implantation method, so that a thin film layer and a remaining medium layer can be formed on the original substrate through the ion separation layer, wherein the thin film layer is a region for bearing ion implantation in the original substrate, and the remaining medium layer is a region where no ions are implanted; a target substrate is bonded to the original substrate through a wafer bonding method, so that the target substrate and the original substrate can be bonded to a bonded structural body; and the bonded structural body is heated, and laseris adopted to irradiate the bonded structural body, so that the thin film layer and the remaining medium layer can be separated from each other, and the thin film layer can be transferred from the original substrate to the target substrate, and the heating temperature of the bonded structural body is higher than room temperature and conversion temperature that enables the dielectric constant and loss factor of the bonded structural body to be converted, and is lower than temperature that activates a smart cut method.

Description

technical field [0001] The invention relates to a method for manufacturing a thin film on a substrate, in particular to a method for transferring a thin film having the same area as the original substrate, nanoscale thickness, high film thickness uniformity, and low defect density. Background technique [0002] The wafer bonding method can combine two single-crystal wafers with very different lattice constants. The bonding interface in the middle does not need to use any glue and remains completely clean, but still can obtain the same bonding strength as the substrate To meet the strict requirements of electronic and optoelectronic materials for interface properties. [0003] In 1988, Dr. W. Maszara in the United States applied a P + Type Etch StopLayer (Etch StopLayer), to make sub-micron-thick bonded insulating layer silicon wafer (Bonding Etch-Back Silicon onInsulator; BESOI), making the application of this technology (BESOI) expanded to electronic materials, optoelectro...

AI Technical Summary

Problems solved by technology

If there is a difference in the thermal expansion coefficients of the two bonded materials, it is easy to generate a huge thermal stress at high temperature and destroy the bonded structure of the two materials; The bonded structure is broken due to excessive thermal stress;

[0009] (3) The thermal efficiency of converting thermal energy into kinetic energy by means of annealing is low, and a large amount of external energy must be consumed to carry out, increasing operating costs;

[0013] (1) Due to the poor uniformity of the energy provided by microwave, radio frequency and inductive coupling field in the chip, a large number of defects are easily generated on the surface of the substrate after the split;

[0014] (2) A large box is required to process the entire batch of products, otherwise it is difficult to increase production capacity;

[0015] (3) Due to the need to use large doses of microwave, radio frequency, etc. in the production process, the safety requirements are very high, and the processing cost is increased

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