Spiral-body-enhanced metal-based or polymer-based composite and preparation method
A technology of composite materials and helicoids, which is applied in metal material coating technology, ion implantation plating, gaseous chemical plating, etc., can solve problems such as poor wettability, low volume of reinforcing phase, and unsatisfactory thermal conductivity.
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Embodiment 1
[0031] Spiral reinforced aluminum matrix composite material (the volume fraction of the helical thermal conductivity enhancement phase in the total volume of the composite material is 15%). The specific preparation steps are (1) select tungsten foil with a thickness of 0.05mm as the metal substrate, and twist it through certain plastic processing Cheng Ru figure 1 The three-dimensional helical structure in the middle; (2) The diamond film is deposited by hot wire CVD, and the deposition process parameters are: hot wire distance 6mm, substrate temperature 800°C, hot wire temperature 2200°C, deposition pressure 3KPa, CH 4 / H 2 The volume flow ratio is 1:99, and the deposition time is controlled to obtain a diamond film thickness of 150 μm, that is, a diamond helix with a metal substrate is obtained; (3) a layer of metal Ni film is first sputtered on the surface of the diamond helix by magnetron sputtering, and the sputtering power 200W, pressure 0.3Pa, substrate temperature 350...
Embodiment 2
[0033] Spiral reinforced aluminum alloy composite material (the volume fraction of the helical thermal conductivity enhancement phase in the total volume of the composite material is 20%). The specific preparation steps are (1) select copper foil with a thickness of 0.05mm as the metal substrate, and twist it through certain plastic processing Cheng Ru figure 1 The three-dimensional helical structure in the middle; (2) The diamond film is deposited by hot wire CVD, and the deposition process parameters are: hot wire distance 6mm, substrate temperature 850°C, hot wire temperature 2200°C, deposition pressure 3KPa, CH 4 / H 2 The volume flow ratio is 1:99, and the deposition time is controlled to obtain a diamond film thickness of 200 μm, that is, a diamond helix with a metal substrate is obtained; (3) Graphene is grown on the surface of a Ni-plated substrate by plasma-assisted chemical vapor deposition, and the foam is formed during the deposition process. Plasma-assisted growth...
Embodiment 3
[0035] Spiral reinforced copper-based composite material (the volume fraction of the helical thermal conductivity enhancement phase in the total volume of the composite material is 40%), the specific preparation steps are (1) choose a 0.3mm silicon wafer as the metal substrate, and twist it into such a figure 1 The three-dimensional helical structure in the middle; (2) The diamond film is deposited by hot wire CVD, and the deposition process parameters are: hot wire distance 6mm, substrate temperature 900°C, hot wire temperature 2300°C, deposition pressure 3KPa, CH 4 / H 2 The volume flow ratio is 1:99, and the deposition time is controlled to obtain a diamond film thickness of 600 μm. After etching the sheet silicon substrate, a self-supporting diamond helix is obtained; (3) a layer of metal is first sputtered on the surface of the diamond helix by magnetron sputtering Ni film, the sputtering power is 200W, the pressure is 0.3Pa, the substrate temperature is 350°C, the argon...
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