Method for efficiently preparing GaN nanocrystals by utilizing CNT (Carbon Nano Tube)

Abstract

The invention belongs to the field of inorganic compound semiconductor materials, in particular relates to a method for efficiently preparing GaN nanocrystals by utilizing a CNT (Carbon Nano Tube). The method comprises the steps of firstly, uniformly grinding and mixing gallium salt and an acidified CNT; then, adding the mixture into a solution prepared from water and polyhydric alcohol; carrying out ultrasonic dispersion under a heating condition; putting a filtered and dried mixture into a tubular furnace; decomposing the filtered and dried mixture under 300 to 500 DEG C of air atmosphere to obtain a porous Ga2O3 and CNT composite material; pumping a protective nitrogen gas in the tubular furnace; rising the temperature to be 750 to 1000 DEG C; replacing the nitrogen gas with an ammonia gas to react for 40 to 80 minutes; stopping pumping the ammonia gas in the nitrogen atmosphere, cooling to room temperature and obtaining light-yellow GaN nanocrystals. According to the method disclosed by the invention, the contact area between the porous Ga2O3 and CNT composite material and NH3 is enlarged by utilizing the porosity of the porous Ga2O3 and CNT composite material, so that NH3 can diffuse and enter Ga2O3 particles for nitridation, the reaction speed is quickened, the reaction temperature is reduced, and prepared GaN nanoparticles are high in yield and purity.

Description

technical field [0001] The invention belongs to the field of inorganic compound semiconductor materials, in particular to a method for efficiently preparing gallium nitride nanocrystals by using carbon nanotubes. Background technique [0002] Gallium nitride (GaN)-based semiconductor materials are new semiconductor materials for the development of optoelectronic devices and microelectronic devices. Together with semiconductor materials such as silicon carbide (SiC) and diamond, they are known as the third-generation semiconductor materials. GaN material is a direct transition type wide bandgap semiconductor material. The wide direct bandgap of GaN is 3.4eV. It has excellent properties such as high electron drift saturation speed, small dielectric coefficient, good thermal conductivity and high radiation resistance, so it is a good semiconductor. It is an ideal material for making light-emitting diodes (LEDs), laser diodes (LDs) and high-temperature high-power integrated circ...

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Problems solved by technology

[0004] However, the above methods have some defects, such as complex growth process, high growth temperature, long reaction time, complex system equipment, high production cost, reactants or by-products are harmful to human body or environment, or are not conducive to the realization of large-scale production.