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A kind of preparation method of porous diamond or porous cubic silicon carbide self-supporting film

A cubic silicon carbide, self-supporting film technology, applied in gaseous chemical plating, metal material coating process, coating and other directions, can solve the problems of increasing the removal steps of metal electrodes, increasing production costs, etc., and achieves low production costs, The effect of good controllability and good stability

Active Publication Date: 2016-07-27
INST OF METAL RESEARCH - CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This not only introduces metal impurities into the porous silicon carbide film, but also increases the steps to remove the metal electrodes after the production is completed, thus increasing the production cost

Method used

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  • A kind of preparation method of porous diamond or porous cubic silicon carbide self-supporting film
  • A kind of preparation method of porous diamond or porous cubic silicon carbide self-supporting film
  • A kind of preparation method of porous diamond or porous cubic silicon carbide self-supporting film

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preparation example Construction

[0039] In the preparation method of porous diamond and porous cubic silicon carbide established according to the present invention, in step 2, the base material pretreated in step 1 is put into chemical vapor deposition equipment, and the vapor phase deposition equipment includes: microwave plasma chemical vapor phase deposition and hot wire chemical vapor deposition. Reactive gases are hydrocarbons, organosilanes and hydrogen.

[0040] In a preferred embodiment of the method according to the invention, the chemical vapor deposition is carried out at a temperature of 500-1000°C, preferably 700-900°C, still more preferably 750-850°C. When the temperature is higher than 1000°C or lower than 500°C, the growth of diamond is inhibited, so that the diamond / cubic silicon carbide composite film cannot be obtained.

[0041] In the preparation method of porous diamond and porous cubic silicon carbide established according to the present invention, in step 2, the reactive gas used for c...

Embodiment

[0049] A high diamond nucleation rate was obtained by immersing a 2-inch silicon wafer in a diamond-containing solution for 30 minutes. Clean the silicon wafer and put it into the microwave plasma vapor deposition equipment. Vacuumize so that the air pressure in the chamber is less than 1×10 -2 Torr, feed hydrogen to 25 Torr, while heating the substrate to 700°C. Then the microwave plasma was excited and the microwave power was fixed to 700W, and methane and tetramethylsilane were passed through to deposit the composite film. figure 2 (a) and (b) show two composite films with different diamond / cubic SiC ratios. figure 2 (a) The composite film shown has a high diamond content, and the concentration ratio of organosilane and methane used to deposit this sample is 20‰; figure 2 (b) shows a composite film with a high cubic SiC content. The concentration ratio of organosilane and methane used to deposit this sample is 60‰.

[0050] The obtained composite film was corroded in...

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Abstract

The invention discloses a method for preparing a porous diamond or porous cubic silicon carbide self-supporting film, comprising: providing a matrix material, and pretreating the surface of the matrix material to obtain a higher diamond nucleation rate; placing the pretreated matrix In a microwave plasma chemical vapor deposition or hot wire chemical vapor deposition reactor, at a temperature of 600-900 ° C, a diamond / cubic silicon carbide composite film is prepared; the resulting composite film is selectively etched: 1) at 70 At a temperature above ℃, etch in a mixed etching solution of hydrofluoric acid and nitric acid to obtain a porous diamond self-supporting film; (2) at a temperature above 500°C, heat in an atmosphere containing oxygen to obtain a porous cubic Silicon carbide free-standing film. Without using any template and electrode materials, the obtained porous diamond and porous cubic silicon carbide self-supporting films have controllable pore size, porosity, and thickness, which are suitable for industrial applications and basic research.

Description

technical field [0001] The invention relates to a method for preparing a porous diamond or porous cubic silicon carbide self-supporting film. Background technique [0002] Due to their large surface area and good permeability, porous materials have high application value in basic research and industrial production. Through the interaction with atoms, ions and molecules, porous materials have high application prospects in ion exchange, filtration, coating of implant materials, adsorption of biochemical substances, catalyst carriers, drug release devices, medical diagnosis and other fields. However, different applications often require different properties of porous materials, such as different chemical stability, mechanical stability, surface hydrophilicity / hydrophobicity, pore size, porosity, etc. Among the current material systems, diamond and cubic silicon carbide have excellent chemical, mechanical and electrical properties. Over the past few decades, there has been con...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C16/30C23C16/56
Inventor 姜辛庄昊拖森史泰勒
Owner INST OF METAL RESEARCH - CHINESE ACAD OF SCI
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