The present invention provides a magnetic random access memory using arched word lines. An array is formed by a cell structure, and the cell structure at least includes an active region carrying layer, an arched word line segment, a first contact column, a second contact column, and a third contact column; The first contact column, the third contact column, and the second contact column are sequentially arranged on the active region carrying layer; the arched word line segment passes through the area between the first contact column, the second contact column and the third contact column, so as to The first contact stud and the second contact stud are located on one side of the arched word line segment, the third contact stud is located on the other side of the arched word line segment, and there is an oxide layer under the arched word line segment. The beneficial effects of the present invention: (1) the design of the peripheral circuit is simple; (2) only two columns share the source line, and the speed is fast; (3) in the active area of the same area, it can withstand greater current and provide faster Speed; (4) Using one less layer of metal reduces the cost, reduces the mutual inductance capacitance, and also helps to increase the speed.