The invention provides a transient voltage inhibitor and a manufacturing method thereof. The transient voltage inhibitor includes a P type substrate, an N type epitaxial layer formed on the P type substrate, a first P type polysilicon, a second P type polysilicon, a first groove, a second groove, a first N type doped region formed on the inner surface of the first groove, a second N type doped region formed on the inner surface of the second groove, a third P type polysilicon formed on the surface of the first N type doped region in the first groove, and a fourth P type polysilicon formed on the surface of the second N type doped region in the second groove, wherein the first P type polysilicon and the second P type polysilicon penetrate through the N type epitaxial layer and extend to theP type substrate; the first groove and the second groove are formed on the surface, far away from the P type substrate, of the N type epitaxial layer; and the third P type polysilicon is also connected with the fourth P type polysilicon. The transient voltage inhibitor has the advantages of small device area, low process difficulty, low manufacturing cost, and higher protection performance and reliability.