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Transient voltage suppressor and method of making the same

A technology of transient voltage suppression and manufacturing method, applied in the direction of electric solid device, semiconductor/solid state device manufacturing, circuit, etc., can solve the problems of increasing device manufacturing cost, large device area, large additional capacitance, etc., to reduce parasitic capacitance, The effect of small device area and reduced manufacturing cost

Active Publication Date: 2018-12-18
伯芯半导体科技(天津)有限公司
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the additional capacitance introduced by these two structures is large, and the device area is large, which reduces the device performance and increases the device manufacturing cost.

Method used

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  • Transient voltage suppressor and method of making the same
  • Transient voltage suppressor and method of making the same
  • Transient voltage suppressor and method of making the same

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Embodiment Construction

[0031] The following will clearly and completely describe the technical solutions in the embodiments of the present invention. Obviously, the described embodiments are only some of the embodiments of the present invention, rather than all the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.

[0032] In order to solve the technical problems of the prior art transient voltage suppressors such as large area, high process difficulty and high device manufacturing cost, the present invention provides an improved transient voltage suppressor, please refer to figure 1 and figure 2 , figure 1 is a schematic structural diagram of the transient voltage suppressor 100 of the present invention, figure 2 yes figure 1 The schematic diagram of the equivalent circuit of the transient voltage suppressor 100 is shown. ...

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Abstract

The invention provides a transient voltage suppressor and a fabricating method thereof. The transient voltage suppressor comprises a P-type substrate, an N-type epitaxial layer, a first P-type doped region and a second P-type doped region, wherein the N-type epitaxial layer comprises a first part and a second part which are arranged at an interval; the first P-type doped region is formed on the surface of the first part; the second P-type doped region is formed on the surface of the second part; the P-type substrate and the first part form a first diode; the P-type substrate and the second part form a second diode; the first part and the first P-type doped region also form a third diode abutted with the first diode; the second part and the second P-type doped region also form a fourth diode abutted with the second diode; a cathode of the first diode is connected with a cathode of the second diode; and a cathode of the third diode is connected with a cathode of the fourth diode.

Description

【Technical field】 [0001] The invention relates to the technical field of semiconductor chip manufacturing, in particular to a transient voltage suppressor and a manufacturing method thereof. 【Background technique】 [0002] Transient Voltage Suppressor (TVS) is a solid-state semiconductor device specially designed to protect sensitive semiconductor devices from transient voltage surge damage. It has small clamping coefficient, small size, fast response, and leakage Due to the advantages of small current and high reliability, it has been widely used in voltage transient and surge protection. Electrostatic discharge (ESD), along with other random voltage transients in the form of voltage surges, are commonly found in a variety of electronic devices. As semiconductor devices are increasingly miniaturized, high-density, and multi-functional, electronic devices are increasingly vulnerable to voltage surges, which can even cause fatal injuries. Transient current spikes can be ind...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L27/02H01L27/08H01L21/8222
CPCH01L21/8222H01L27/0248H01L27/0814
Inventor 孙丽芳
Owner 伯芯半导体科技(天津)有限公司
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