Green and environment-friendly chemical mechanical polishing method for cadmium zinc telluride wafer

A technology of cadmium zinc telluride wafer and chemical machinery, which can be applied to polishing compositions containing abrasives, grinding machine tools, electrical components, etc., and can solve problems such as affecting the polishing effect of CZT wafers.

Inactive Publication Date: 2020-10-27
DALIAN UNIV OF TECH
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Moreover, the abrasive grains are contact-compressed by the AFM atomic force microscope, and the measured elastic modulus distribution of the abrasive grains with different aspect ratios shows that the mechanical properties of the abrasive grains will affect the polishing effect of the CZT wafer.

Method used

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  • Green and environment-friendly chemical mechanical polishing method for cadmium zinc telluride wafer
  • Green and environment-friendly chemical mechanical polishing method for cadmium zinc telluride wafer
  • Green and environment-friendly chemical mechanical polishing method for cadmium zinc telluride wafer

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Experimental program
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Embodiment

[0028] Firstly, the CZT samples were ground. Cut a CZT wafer with a thickness of 1.2-1.5mm into about 1×1cm 2 Take 3 cut CZT samples and glue them on the same circumference of the aluminum alloy loading plate evenly spaced. Bonded silicon carbide sandpaper with an abrasive grain size of #4000 was pasted and fixed on a cast iron grinding disc. During grinding, the grinding pressure is 30kPa, the rotational speed of the grinding disc and the loading disc are both 50rpm, the grinding liquid is deionized water, the flow rate of deionized water is 10mL / min, and the grinding time is 60s. After the CZT sample was ground, it was rinsed with deionized water and ethanol for 18 min respectively, and dried with compressed air. In the grinding stage, fixed abrasives are used for grinding. Compared with free abrasives, the surface oxide layer and damaged layer caused by ingot cutting can be quickly and efficiently realized, the surface is flattened, and unnecessary surface defects caused ...

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Abstract

The invention discloses a green and environment-friendly chemical mechanical polishing method for a cadmium zinc telluride wafer, and belongs to the technical field of semiconductor ultra-precision machining. The method comprises the following steps: firstly, grinding a tellurium-zinc-cadmium wafer by taking deionized water as a grinding fluid, then chemically and mechanically polishing, and preparing a polishing solution by adopting a rod-like mesoporous ceramic abrasive, the deionized water, an oxidant, a dispersing agent and a pH regulator. The detection range of the surface roughness of the CZT polished by the method is 5 * 5 [mu]m<2>, and the Ra value reaches 0.26-0.34 nm. According to the invention, the ultra-smooth low-damage chemical mechanical polishing of the CZT is realized. Andthe elastic modulus measurement result of the abrasive particles shows that the elastic modulus of the abrasive particles has an influence on the polishing result of the cadmium zinc telluride wafer.

Description

technical field [0001] The invention belongs to the technical field of ultra-precision processing of semiconductors, and relates to a green and environment-friendly chemical mechanical polishing method for CdZnTe wafers. Background technique [0002] Cadmium Zinc Telluride, chemical formula Cd 1-x Zn x Te (abbreviated as CZT), is a kind of II-VI ternary compound semiconductor formed by solid solution of cadmium telluride and zinc telluride. With many excellent physical and chemical properties, such as large bandwidth, high resistivity, low leakage current under high voltage, and good thermal stability, it is currently the most ideal semiconductor material for making room temperature X-ray and γ-ray detectors. High-energy physics fields such as equipment, nuclear science and technology, astronomical observation, medical diagnosis, and safety testing are widely used. In addition, the lattice constant of CZT can be modulated by changing the added component (x) of Zn to achie...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/463C09G1/02B24B1/00B24B37/00
CPCH01L21/463C09G1/02B24B1/00B24B37/00
Inventor 张振宇郜培丽孟凡宁刘婷婷孟祥东谢文祥
Owner DALIAN UNIV OF TECH
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