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Microfabrication process for micro capacitor based on cobaltosic oxide nano structure

A technology of tricobalt tetroxide and nanostructure, which is applied in the field of nanomaterials at the intersection of micromachining technology and micronano energy storage devices, can solve problems such as the inability to manufacture microcapacitors cheaply and efficiently, and achieve good application prospects, good electrochemical performance, and high The effect of capacity

Inactive Publication Date: 2015-07-08
WUHAN UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

None of the existing mainstream micromachining processes for making microcapacitors can produce microcapacitors based on tricobalt tetroxide cheaply and efficiently.

Method used

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  • Microfabrication process for micro capacitor based on cobaltosic oxide nano structure
  • Microfabrication process for micro capacitor based on cobaltosic oxide nano structure
  • Microfabrication process for micro capacitor based on cobaltosic oxide nano structure

Examples

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Embodiment 1

[0030] Example 1, see Figure 1 to Figure 4 Shown:

[0031] The present invention provides a micro-fabrication process for micro interdigital capacitors based on cobalt trioxide nanostructure, comprising the following steps:

[0032] 1) Clean double-sided polished N-type Si / SiO with a typical RCA cleaning process 2 The substrate is then baked in an oven at 145°C for 30 minutes;

[0033] 2) Coat the photoresist PR19000A on the surface of the substrate described in step 1) by spin coating. The thickness of the photoresist is: 6.8 μm. Step: 30 seconds, 6000rpm;

[0034] 3) Use a mask plate with a symmetrical supercapacitor pattern to carry out ultraviolet lithography to the sample obtained in step 2), and the exposure dose is 400mJ / cm 2 ;

[0035] 4) Immerse the sample obtained in step 3) in RD-6 developer, No. 1 deionized water, and No. 2 deionized water for development and rinse in sequence. The specific time is: development, 40 seconds, No. 1 deionized water, 40 seconds,...

Embodiment 2

[0043] The present invention provides a micro-fabrication process for micro interdigital capacitors based on cobalt trioxide nanostructure, comprising the following steps:

[0044] 1) Clean single-side polished N-type Si / SiO with a typical RCA cleaning process 2 The substrate is then baked in an oven at 145°C for 30 minutes;

[0045] 2) Coat the photoresist NR9-3000PY on the surface of the substrate described in step 1) by spin coating, the thickness of the photoresist is: 7.2μm, and the specific technical parameters are: the first step: 5 seconds, 500rpm, The second step: 30 seconds, 2500rpm;

[0046] 3) Use a mask plate with a symmetrical supercapacitor pattern to carry out ultraviolet lithography to the sample obtained in step 2), and the exposure dose is 570mJ / cm 2 ;

[0047]4) Immerse the sample obtained in step 3) in RD-6 developer, No. 1 deionized water, and No. 2 deionized water for developing and rinsing in sequence. The specific time is: developing, 20 seconds, No...

Embodiment 3

[0054] The present invention provides a micro-fabrication process for micro interdigital capacitors based on cobalt trioxide nanostructure, comprising the following steps:

[0055] 1) Clean double-sided polished N-type Si / SiO with a typical RCA cleaning process 2 The substrate is then baked in an oven at 145°C for 30 minutes;

[0056] 2) Apply the photoresist NR9-3000PY on the surface of the substrate described in step 1) by spin coating, the thickness of the photoresist is: 6.9 μm, and the specific technical parameters are: the first step: 5 seconds, 500rpm, The second step: 30 seconds, 2500rpm;

[0057] 3) Use a mask plate with a symmetrical supercapacitor pattern to carry out ultraviolet lithography to the sample obtained in step 2), and the exposure dose is 570mJ / cm 2 ;

[0058] 4) Immerse the sample obtained in step 3) in RD-6 developer, No. 1 deionized water, and No. 2 deionized water for developing and rinsing in sequence. The specific time is: developing, 17 seconds...

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Abstract

The invention provides a microfabrication process for a micro capacitor based on a cobaltosic oxide nano structure. The micro capacitor microfabrication process includes the steps of mask manufacturing, ultraviolet photolithography, physical vapor deposition, stripping flotation and fast annealing treatment, the photosensitive property of photoresist is used, a sample with photoresist microstructural patterns is manufactured through mask manufacturing, ultraviolet photolithography and semiconductor machining processes, and the micro capacitor based on the cobaltosic oxide nano structure is manufactured through physical vapor deposition, stripping flotation and fast annealing treatment. The optimal process based on fast annealing and oxidizing is provided to manufacture the patterned cobaltosic oxide nanowire microstructure, the process fuses and uses related technologies in the semiconductor field and a micro-nano structure synthesizing method, the process is concise, the related technologies are mature, the process can be applied to mass production, and the obtained cobaltosic oxide nanowire microstructure is high in chemical stability and electrochemical performance.

Description

technical field [0001] The invention relates to the intersecting fields of nanomaterials, micromachining techniques and micronano energy storage devices, in particular to a microcapacitor microfabrication technique based on the nanostructure of tricobalt tetroxide. Background technique [0002] Various micro-nano structures and micro-nano devices produced by micro-processing technology developed from semiconductor technology have extremely high application potential and prospects in the fields of micro-sensors, micro-drivers, micro-biochemical systems, and micro-electrochemical devices. As microcapacitors are functional units in the field of micro-nano devices and systems, their performance and efficient and reliable micro-fabrication processes are increasingly important. Cobalt tetroxide is a potential supercapacitor electrode material with high theoretical specific capacitance, and it is also a widely researched electrode material. None of the existing mainstream micromac...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01G11/84
CPCY02E60/13H01G11/84
Inventor 何亮麦立强封淑萱魏湫龙晏梦雨
Owner WUHAN UNIV OF TECH
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