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Embedded type combined heat sink as well as preparation method thereof

An embedded, heat sink technology, used in chemical instruments and methods, lamination devices, lamination and other directions, can solve the problems of increased thermal diffusion distance, large contact thermal resistance, low strength, etc., to reduce thermal expansion coefficient, improve Adhesion strength, effect of reducing interfacial thermal resistance

Active Publication Date: 2014-01-08
SOUTH CHINA UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The disadvantage of this method is that the composite primary radiator containing a large amount of diamond particles has poor molding performance and low strength. It needs a certain thickness to ensure the strength as a primary radiator, but this also makes the thermal diffusion distance along the thickness direction Increase, although the thermal conductivity is high, the thermal resistance is not small. In addition, the overly thick primary heat sink does not take advantage of the miniaturization of the entire microelectronic device; the primary heat sink is mostly connected to the secondary heat sink by mechanical contact. , the contact thermal resistance is large, although the thermal contact resistance can be appropriately reduced by applying thermal conductive silicone grease, the overall heat dissipation thermal resistance cannot be effectively reduced, and the heat dissipation effect is still limited
[0003] High-efficiency heat sinks are still a research hotspot among scholars today, but most of them are devoted to the research on improving the thermal conductivity of a single primary radiator material. The process is complicated. Although the thermal conductivity is significantly improved, the bending strength and mechanical Significantly worse processing performance

Method used

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  • Embedded type combined heat sink as well as preparation method thereof
  • Embedded type combined heat sink as well as preparation method thereof
  • Embedded type combined heat sink as well as preparation method thereof

Examples

Experimental program
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Effect test

Embodiment 1

[0035] (1) Select CuCr (0.8%wt.) alloy as the secondary heat sink (substrate), cut into 20×10×2mm block samples, mechanically polish the surface to be sprinkled with diamond powder, and ultrasonically clean it with anhydrous alcohol for 15 Minutes to remove the remaining polishing paste on the surface, and finally dry it with cold air;

[0036] (2) Put the polished and cleaned sample into a hydrogen protective atmosphere furnace, heat it to 500°C, keep it warm for 20 minutes, and then cool it down to room temperature with the furnace. The hydrogen protection can only be removed by cooling below 80°C, and the bright softening annealed CuCr (0.8%wt.) alloy can be obtained;

[0037] (3) Use MBD4 grade W10 diamond powder as embedded particles. Use a 50 ml flat-bottomed beaker as a dusting container with an inner diameter of 4.2 cm. The coverage rate of the diamond micropowder to the bottom surface of the container is 60%, and according to the formula 60%3.5Sh, the addition amoun...

Embodiment 2

[0046] (1) Select CuB (0.5%wt.) alloy as the secondary heat sink (substrate), cut into 20×10×2mm block samples, mechanically polish the surface to be sprinkled with diamond powder, and ultrasonically clean it with anhydrous alcohol for 15 Minutes to remove the remaining polishing paste on the surface, and finally dry it with cold air;

[0047] (2) Put the polished and cleaned sample into a hydrogen protective atmosphere furnace, heat it to 500°C, keep it warm for 20 minutes, and then cool it down to room temperature with the furnace. The hydrogen protection can only be removed by cooling below 80°C, and the bright softening annealed CuB (0.5%wt.) alloy can be obtained;

[0048] (3) Use MBD4 grade W30 diamond powder as embedded particles. Use a 50 ml flat-bottomed beaker as a dusting container with an inner diameter of 4.2 cm. The coverage of the diamond micropowder on the bottom surface of the container is 60%. According to the formula 60%3.5Sh, the amount of W30 diamond mic...

Embodiment 3

[0057] (1) Select ZL102 (containing Si10~13wt.%) alloy as the secondary heat sink (substrate), cut into 20×10×4mm block samples, mechanically polish the required diamond powder surface, and use anhydrous alcohol ultrasonic Wash for 15 minutes to remove the residual polishing paste on the surface, and finally dry it with cold air;

[0058] (2) Put the polished and cleaned sample into a low-temperature annealing furnace, heat it to 250-300°C, keep it warm for 60 minutes, and then cool it down to room temperature with the furnace. Place the annealed sample in 5% NaOH solution, and rinse it with distilled water quickly when hydrogen bubbles are seen. The purpose of soaking in NaOH solution is to reduce the thickness of the oxide film formed during annealing;

[0059] (3) Use MBD4 grade W10 diamond powder as embedded particles. Use a 50 ml flat-bottomed beaker as a dusting container with an inner diameter of 4.2 cm. The coverage rate of the diamond micropowder to the bottom surf...

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Abstract

The invention discloses an embedded type combined heat sink as well as a preparation method thereof. The heat sink comprises a primary radiator and a secondary radiator. By taking the secondary radiator as a base body, the primary radiator is embedded into a surface layer of the base body to form a composite layer located on the surface layer of the base body. The integrated structure is the embedded combined heat sink. The preparation method comprises the following steps: (1) by taking a secondary radiator material as the base body, carrying out softening annealing heat treatment on the base body; (2) preparing diamond powder into a suspension liquid, wherein the diamond powder subsides on the surface of the base body; under the premise that distribution of diamond on the surface of the base body is not changed, reducing the liquid level to be under the surface of a sample and taking out the sample; and (3) reducing the thickness of a diamond powder-containing liquid film on the surface of the sample; then, pressing the diamond powder into the base body; and finally, carrying out diffusion annealing treatment on the sample and cooling to obtain the heat sink. The primary and secondary radiators are integrated to eliminate the contact heat resistance. The thickness of the heat sink is just dozens of microns, so that the heat resistance is small. The process links are reduced and the cost is lowered.

Description

technical field [0001] The invention belongs to the field of heat dissipation management materials, in particular to a combined heat sink embedded in high power density devices, light emitting diodes, solid lasers and other devices and a preparation method thereof. Background technique [0002] With the rapid development of microelectronics integration technology and high-density assembly technology of air-core printed boards, the density of semiconductor integrated circuits is increasing, the power density is increasing, and a large amount of heat is generated during operation. The working stability, safety and reliability of the device directly depend on how to quickly dissipate the Joule heat generated by the component to the outside of the system and other thermal controls, and its reliability and life will decrease exponentially with the increase of temperature. Heat dissipation has become one of the key issues in the further development of modern microelectronic device...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B32B15/16B32B37/24
Inventor 邱万奇洪涛
Owner SOUTH CHINA UNIV OF TECH
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