Thermochemistry mechanical polishing method of sapphire substrate material and polishing solution

Abstract

The invention relates to a thermochemistry mechanical polishing method of a sapphire substrate material; a polishing disk is heated in the polishing process; the temperature of the polishing disk is 30 DEG C-100 DEG C; a polishing solution adopted in the polishing method comprises a compound abrasive material, a pH compound conditioning agent, a surface active agent, a dispersing agent and deionized water, wherein the compound abrasive material is formed by mixing particles of a hard abrasive material and a soft abrasive material; the pH compound conditioning agent comprises organic strong base and organic weak base; and the pH value of the polishing solution is 8-13. The thermochemistry mechanical polishing method has the advantages: in the polishing process, the cast ion polishing disk is heated to promote a reaction rate between the polishing solution and the sapphire substrate material, thereby improving the polishing efficiency; problems such as surface scratch, subsurface cracks and the like can be avoided by using the compound abrasive material in the polishing solution so as to obtain surface characteristics of high quality and high evenness; meanwhile, the polishing efficiency is considered; and the polishing solution also has the advantages that the stability is high, equipment is not corroded, washing is easy and the like.

Description

technical field [0001] The invention relates to the technical field of microelectronic auxiliary materials and processing technology, in particular to a thermochemical mechanical polishing method and polishing liquid for sapphire substrate materials. Background technique [0002] Sapphire integrates excellent optical, physical and chemical properties. It has the same optical properties, mechanical properties, thermal properties, electrical properties and dielectric properties as natural gemstones, and is chemically stable and corrosion-resistant. The Mohs hardness reaches 9. , second only to the hardness of diamond. Due to its excellent properties, sapphire has been widely used in national defense, scientific research, industry and other fields. In its many applications, due to the small lattice constant mismatch rate between sapphire and GaN, it is the most important at this stage. One of GaN thin film epitaxial substrates. Because GaN is known as the third-generation sem...

AI Technical Summary

Problems solved by technology

However, the selected silica sol is used as a polishing abrasive, so the polishing efficiency is low

[0020] The above polishing liquids all use a single polishing abrasive silica sol. Since the Mohs hardness of silica sol is smaller than that of sapphire, the effect of mechanical grinding in the polishing process is reduced, so the efficiency of sapphire substrate polishing is not very high.

[0021] In summary, although various existing polishing methods and polishing solutions can reduce the surface roughness of sapphire substrate materials and achieve good flatness, these polishing methods generally require several steps to complete. , the polishing process is complicated, and the operation is not very convenient

Moreover, the polishing liquid uses a single abrasive, which makes scratches or subsurface cracks on the sapphire surface during the polishing process when diamonds with higher hardness are used as abrasives. When silica sol with lower hardness is used, the polishing rate decreases. Reduced efficiency

Images