Full silicon quantum dot nano laser and manufacturing method thereof

Abstract

The invention discloses a full silicon quantum dot nano laser and a manufacturing method thereof. The nano laser is excited by optical pumping, uses full silicon quantum dots as working substance, adopts two-dimensional photonic crystals for resonant mode selection and generates laser, uses nanosecond pulse laser beams for processing and has about 100[mum] of the line diameter size of the main body, so the nano laser is the laser having the smallest volume at present; the light exit power of the laser can be up to 1 milliwatt, the light exit wavelength can be adjusted in the range from 570nm to 760nm, and the manufactured full silicon quantum dot nano laser is good in structural stability and repeatability, has outstanding light gain in the aspect of light emitting property under shortwave laser pumping, and also has excellent coherence. The manufacturing cost is low and large-scale industrial production can be easily realized.

Description

technical field [0001] The invention relates to the technical fields of nano-photonic materials and novel lasers, in particular to an all-silicon quantum dot nano-laser and a preparation method thereof. Background technique [0002] Today's development has entered into on-chip optoelectronic integration and chip-level all-opticalization, which is the key to realizing optical quantum information processing and optical quantum information calculation, and making light sources and propagation nodes for optical interconnection on silicon chips is a bottleneck. work. At present, there is an urgent need for chip-level micro-lasers and coherent light sources. [0003] Today, the microelectronic information industry based on silicon is highly developed, but due to the limitation of size and power consumption, Moore's Law has reached the limit of its applicable scope. Scientists are trying to establish a new optical quantum information processing system on silicon based on optical ...

AI Technical Summary

Problems solved by technology

The second is the need to improve the optical properties of silicon materials. We know that the indirect bandgap structure of single crystal silicon leads to low luminous efficiency of silicon materials, and the way to improve the optical properties of silicon materials is mainly to use energy band engineering to prepare low-dimensional silicon materials. Nanostructures to obtain quasi-direct bandgap structures, such as nano-silicon, porous silicon, germanium-silicon strained layers, and nano-silicon oxide materials

However, to sum up, there are still problems in the research work of the past ten years at home and abroad: there are many deficiencies in the preparation of the above materials, such as porous silicon is not easy to preserve, luminescence is unstable, and the preparation cost of nano-silicon and germanium-silicon strained layers is high ( Traditional molecular beam epitaxy (MBE) method and chemical vapor deposition (CVD) method), difficult to industrialize, etc.

Currently, there are no chip-scale lasers

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