Bismuth-doped rare earth iron garnet single crystal film, preparation method thereof and optical device

An iron garnet, single crystal thin film technology, applied in the field of optical communication, can solve the problems of increased thermal stress and lattice mismatch, increased cracking risk, cracking of the single crystal film layer, etc., so as to eliminate concentration changes and cracking risks. The effect of reducing and reducing surface defects

Active Publication Date: 2022-04-12
YANGTZE OPTICAL FIBRE & CABLE CO LTD
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] At present, doping bismuth ions is usually used to increase the Faraday coefficient of single crystal thin films. The Faraday rotation coefficient of the film will increase with the concentration of doped Bi ions, and Bi ions will not increase the absorption loss, but as mentioned above , increasing the replacement amount of Bi ions will lead to large lattice distortion and easily cause cracking of the single crystal film; the thickness of the single crystal film can be increased by increasing the growth rate and growth time, but the increase in thickness will affect the thermal stress and The degree of lattice mismatch leads to an increase in thermal stress and lattice mismatch, which increases the risk of cracking

Method used

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  • Bismuth-doped rare earth iron garnet single crystal film, preparation method thereof and optical device
  • Bismuth-doped rare earth iron garnet single crystal film, preparation method thereof and optical device
  • Bismuth-doped rare earth iron garnet single crystal film, preparation method thereof and optical device

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preparation example Construction

[0042] Combine below figure 2 , the core preparation method of the bismuth-doped rare earth iron garnet single crystal film provided by the present invention is described. In order to prepare a high-performance bismuth-doped rare earth iron garnet single crystal film, the preparation method provided by the present invention includes:

[0043] S1 Put the single crystal component and co-solvent into the platinum crucible, heat it to melt;

[0044] In this embodiment, the configured single crystal component and co-solvent component are added into the platinum crucible 6 of the above-mentioned liquid phase epitaxial growth equipment, and heated until the single crystal component and co-solvent are completely melted.

[0045] The single crystal component refers to the preparation of YIG (yttrium iron garnet, Y 3 Fe 5 o 12 ) of conventional raw materials (Fe 2 o 3 and rare earth R oxides) and Bi element substances used to partially replace Y (such as Bi 2 o 3 ), Ga element m...

Embodiment 1

[0068] A bismuth-doped rare earth iron garnet single crystal film (Bi 3-x R x )(Fe 5-y Ga y )O 12 For preparation methods, see image 3 , and its specific implementation steps are:

[0069] (1) CaMgZr: GGG single crystal substrate with a diameter of two inches is pulled and prepared, processed into a 0.5mm thin slice, and polished on one side, and the measured lattice constant is After cleaning with alcohol, it is ready for use.

[0070] (2) Raw material preparation: Weigh 810g of lead oxide, 1150g of bismuth oxide, 15g of boron oxide, 120g of ferric oxide, 10.5g of terbium oxide, 12.1g of gallium oxide, and 5.1g of ytterbium oxide, and mix well.

[0071] (3) Put the raw material into the platinum crucible, put it into the liquid phase epitaxy furnace, and clamp the CaMgZr:GGG single crystal substrate on the platinum fixture.

[0072] (4) Raise the temperature of the liquid phase epitaxy furnace to 940° C., keep it warm for 10 hours, and then lower the temperature to 7...

Embodiment 2 Embodiment 6

[0078] The bismuth-doped rare earth iron garnet single crystal film (Bi 3-x R x )(Fe 5-y Ga y )O 12 The preparation method, its specific implementation steps are the same as in Example 1, the difference is that the preparation process parameters are different, the preparation process parameters of each embodiment are shown in Table 1, and the obtained single crystal thin film products and corresponding test results are shown in Table 2:

[0079] The process parameter of table 1 embodiment two~embodiment six

[0080]

[0081] The test result of table 2 embodiment two~embodiment six

[0082]

[0083] The minimum thickness of the single-crystal thin film prepared by adopting the recipe provided in Example 6 and the epitaxial growth process is 235 μm, indicating that the 235 μm single-crystal thin film prepared in this example can reach a Faraday rotation angle of 45° in the 1310 nm wave band, and the thinner thickness It has higher growth efficiency and better insertio...

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Abstract

The invention discloses a bismuth-doped rare earth iron garnet single crystal film, a preparation method thereof and an optical device, and the method comprises the following steps: putting a single crystal component and a cosolvent into a platinum crucible, and heating to melt the single crystal component and the cosolvent; the temperature of the melt in the platinum crucible is reduced to the initial growth temperature, so that the single crystal component is gradually deposited on the surface of a single crystal substrate arranged in the platinum crucible; in the deposition process, the platinum crucible and the single crystal substrate are controlled to rotate reversely, and the rotating direction of the platinum crucible and the rotating direction of the single crystal substrate are converted according to a preset first period; and moving the single crystal substrate by a set distance along the depth direction of the melt according to a preset second period, and uniformly depositing the melts at different depths on the single crystal substrate to form the bismuth-doped rare earth iron garnet single crystal film, according to the preparation method, the single crystal thin film with more uniform magneto-optical performance and optical performance can be prepared, the Faraday coefficient of the single crystal thin film is improved by improving the effective replacement amount of bismuth under the condition that the large film thickness is not needed, and the cracking risk of the single crystal thin film is reduced.

Description

technical field [0001] The present application relates to the technical field of optical communication, and more specifically, to a bismuth-doped rare earth iron garnet single crystal thin film, a preparation method thereof, and an optical device. Background technique [0002] Optical isolator is an indispensable optical device in optical communication. It can transmit forward optical signals, but prevent reflected optical signals from returning, and protect the front optical path. It is used in high-speed and long-distance optical communication systems. widely. The application principle of the optical isolator is the Faraday effect, that is, the phenomenon that the polarization plane of the transmitted light rotates in a transparent medium with a magnetic field applied, and the direction of rotation has nothing to do with the direction of light propagation. At present, bismuth-doped rare earth iron garnet single crystal thin film is used as a Faraday magneto-optic single c...

Claims

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Application Information

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IPC IPC(8): C30B29/28C30B19/02C30B19/10G02B6/27
Inventor 侯田江马晓桂训鹏胡露刘凯
Owner YANGTZE OPTICAL FIBRE & CABLE CO LTD
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