Method for realizing electronically localized passivation contacts, crystalline silicon solar cell and method for producing the same

Abstract

The invention discloses a method for realizing electronic partial passivation contact. First, a tunneling silicon oxide and an amorphous silicon layer are prepared on a crystalline silicon substrate from which a damaged layer has been removed, and then a phosphorus doping is partially covered on the amorphous silicon thin film. agent, and then etches away the amorphous silicon film layer without partial coverage of the phosphorus dopant region by alkaline solution, and then fully crystallizes the amorphous silicon into polysilicon by annealing, and at the same time activates the phosphorus dopant and completes its formation in the polysilicon film Internal redistribution, and finally prepare a metallization layer on this partially phosphorus-doped polysilicon film. Furthermore, the present invention also discloses a crystalline silicon solar cell with an electronic local passivation contact structure and a corresponding cell preparation method. The method disclosed by the invention is simple in process, low in cost, and has good industrialization potential; the battery provided by the invention has good front optical performance and low metallization recombination, and can obtain higher collection probability of photogenerated carriers and less photogenerated carrier transport loss.

Description

technical field [0001] The invention belongs to the technical field of solar cell preparation, and specifically relates to a method for realizing an electronic local passivation contact structure, and applying the electronic local passivation contact structure to a crystalline silicon solar cell and a corresponding cell preparation method. Background technique [0002] Passivated contact (Tunnel Oxide and Passivated Contact, TOPCon) solar cell is a new type of high-efficiency solar cell, which passivates crystalline silicon solar cells (hereinafter referred to as solar cells or cells) by tunneling silicon oxide and doped polycrystalline silicon. surface, to realize the selective passage of photogenerated carriers, that is, the majority carriers can enter the doped polysilicon film through the tunneling silicon oxide layer without hindrance and then be collected, while the minority carriers are in the tunnel The recombination rate at the interface of the silicon oxide and sil...

AI Technical Summary

Problems solved by technology

Photolithography belongs to the manufacturing method of semiconductor chips, the cost is high and the preparation steps are cumbersome; and the use of chemical slurry etching to prepare local contact passivation structures also requires doping on the polysilicon layer, preparing masks, printing protective or Etching-type chemical slurry, chemical etching, and mask removal, etc., the preparation steps are cumbersome and the cost is high

It can be seen that using these two commonly used methods to prepare local passivation contact structures requires cumbersome process steps, and the cost of photoresist and chemical etching slurry as consumable materials is also high, resulting in relatively high overall preparation costs, which is why It brings great difficulty to the application of local passivation contact structure

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