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High-quality graphene/two-dimensional metal carbide crystal vertical heterostructure material and its preparation method

A metal carbide and heterostructure technology, applied in the direction of tungsten/molybdenum carbide, carbide, graphene, etc., can solve the problems of weak interface interaction, interface pollution, poor quality graphene, etc.

Active Publication Date: 2021-05-28
INST OF METAL RESEARCH - CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] The purpose of the present invention is to provide a high-quality graphene / two-dimensional metal carbide crystal vertical heterostructure material with clean interface, consistent crystal orientation and strong coupling effect and its preparation method, to solve the vertical heterostructure obtained in the current research. Poor quality of graphene in the structure, interface contamination, weak interface interaction, etc., lay the foundation for studying the intrinsic properties of graphene / two-dimensional metal carbide crystal vertical heterostructure and exploring its application

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  • High-quality graphene/two-dimensional metal carbide crystal vertical heterostructure material and its preparation method
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  • High-quality graphene/two-dimensional metal carbide crystal vertical heterostructure material and its preparation method

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preparation example Construction

[0043] In a specific embodiment, the preparation method of the high-quality graphene / two-dimensional metal carbide crystal vertical heterostructure material of the present invention adopts a double metal laminate composed of copper foil (upper layer) / metal foil (bottom layer) as the growth substrate , at high temperature, graphene is grown by catalytic cracking of carbon source by chemical vapor deposition technology, and then two-dimensional transition metal carbide crystals are grown between liquid copper and graphene, and then the copper substrate is etched away to obtain graphene / two-dimensional metal carbide The specific steps are as follows:

[0044] (1) CVD growth of graphene / two-dimensional metal carbide crystal vertical heterostructure materials: the bimetallic laminate composed of the upper layer copper foil / bottom metal foil is used as the growth substrate, and it is the first in the high temperature chemical vapor deposition process. Graphene grows on the surface o...

Embodiment 1

[0054] In this embodiment, the high-quality graphene / two-dimensional metal carbide crystal vertical heterostructure material and its preparation method are as follows:

[0055] First, if figure 1 As shown, the present invention adopts a horizontal reaction furnace to grow graphene / two-dimensional metal carbide crystal vertical heterostructure, and the two ends of the horizontal reaction furnace are respectively provided with a gas inlet 1 and a gas outlet 3, and the copper foil / molybdenum sheet is placed in a horizontal In the high-temperature zone of the type reaction furnace, the copper foil / molybdenum sheet (copper foil 20 mm × 20 mm × 25 microns, the purity is 99.999wt%, the molybdenum sheet 20 mm × 20 mm × 100 microns, the purity is 99.95 wt%) is placed on a horizontal Type reaction furnace (diameter of furnace tube 22 mm, length of reaction zone 20 mm) in the central area; heated to 1070 ° C in hydrogen and argon atmosphere (hydrogen flow rate is 200 ml / min, argon flow r...

Embodiment 2

[0059] In this embodiment, the high-quality graphene / two-dimensional metal carbide crystal vertical heterostructure material and its preparation method are as follows:

[0060] First, if figure 1 As shown, the present invention adopts a horizontal reaction furnace to grow graphene / two-dimensional metal carbide crystal vertical heterostructure, and the two ends of the horizontal reaction furnace are respectively provided with a gas inlet 1 and a gas outlet 3, and the copper foil / molybdenum sheet is placed in a horizontal In the high temperature zone of the type reaction furnace, the copper foil / molybdenum sheet (copper foil 20 mm × 20 mm × 12.5 microns, purity 99.5wt%, molybdenum sheet 20 mm × 20 mm × 100 microns, purity 99.95 wt%) is placed on a horizontal Type reaction furnace (diameter of furnace tube 22 mm, length of reaction zone 20 mm) in the central area; heated to 1070 ° C in hydrogen and argon atmosphere (hydrogen flow rate is 200 ml / min, argon flow rate is 500 ml / min ...

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Abstract

The invention relates to the field of new materials, in particular to a high-quality graphene / two-dimensional metal carbide crystal vertical heterostructure material and a preparation method thereof. Using bimetallic laminates composed of copper foil / metal foil as the growth substrate, it is the first to grow graphene through catalytic cracking of carbon source by CVD technology at high temperature, and then raise the temperature to further grow two-dimensional transition metal carbides under the graphene crystal, or directly grow graphene and two-dimensional transition metal carbides at a temperature higher than the melting point of copper, thereby preparing a graphene / two-dimensional metal carbide vertical heterostructure, and subsequently etching away the copper substrate to obtain a graphene / two-dimensional metal carbide heterostructure. Vertical heterostructures of two-dimensional metal carbides. The invention lays a foundation for the research and application of high-quality graphene / two-dimensional metal carbide vertical heterostructures in the fields of catalysis, laser detection, transparent conductive films, thermal management, two-dimensional superconductivity, and highly transparent Josephson junctions.

Description

Technical field: [0001] The invention relates to the field of graphene / two-dimensional metal carbide crystal vertical heterostructure new material and its chemical vapor deposition (CVD) preparation field, specifically a high-quality graphene / metal carbide with clean interface, consistent crystal orientation and strong coupling effect The two-dimensional metal carbide crystal vertical heterostructure material and its preparation method are suitable for the preparation of large-area, high-quality graphene / two-dimensional metal carbide crystal vertical heterostructure materials. Background technique: [0002] Graphene and other two-dimensional crystals not only exhibit many new physical properties, super properties and promising applications different from their corresponding bulk materials, but also create unusual properties, new physical properties and for Two-dimensional vertical heterostructures with unprecedented possibilities in the field of technological applications pr...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C01B32/186C01B32/949C01B32/194B82Y30/00B82Y40/00
CPCB82Y30/00B82Y40/00C01P2002/01C01P2002/72C01P2002/80C01P2002/82C01P2004/03C01P2004/64C01P2006/40
Inventor 任文才徐川陈龙成会明
Owner INST OF METAL RESEARCH - CHINESE ACAD OF SCI
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