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Thermoelectric device and electrode thereof, and method for preparing electrode

A technology of thermoelectric devices and electrodes, which is applied to the manufacture/processing of thermoelectric device parts and thermoelectric devices, etc., which can solve the problems of decreased stability of thermoelectric devices, reduced performance of thermoelectric materials, and increased interface contact resistance, so as to improve stability , High production efficiency, small interface contact resistance

Inactive Publication Date: 2018-02-06
SHENZHEN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The purpose of the present invention is to overcome the above-mentioned deficiencies in the prior art, and provide a thermoelectric device electrode and its preparation method to solve the problem that the thickness of the diffusion layer increases with the prolongation of the service time of the existing thermoelectric device electrodes, which leads to interface problems. The increase of contact resistance reduces the performance of thermoelectric materials and leads to the technical problems of the stability of thermoelectric devices
[0006] Another object of the present invention is to provide a thermoelectric device to solve the technical problem that the stability of the hot end of the existing thermoelectric device decreases with the prolongation of service time

Method used

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  • Thermoelectric device and electrode thereof, and method for preparing electrode
  • Thermoelectric device and electrode thereof, and method for preparing electrode
  • Thermoelectric device and electrode thereof, and method for preparing electrode

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preparation example Construction

[0030] Correspondingly, the embodiment of the present invention also provides a preparation method of the thermoelectric device electrode mentioned above. This preparation method comprises the steps:

[0031] S01. laying titanium-nickel alloy barrier layer powder layer, solder layer 3 and electrode layer 4 sequentially on the surface of the half-Heusler substrate;

[0032] S02. Carry out sintering treatment again.

[0033] Specifically, the half-Heusler matrix, the solder layer 3 and the electrode layer 4 in the above step S01 are all as described above, and will not be repeated here to save space. Wherein, the solder layer 3 may be a solder foil, specifically a silver-copper-zinc solder foil with a melting point of 600-800°C. The electrode layer 4 can be but not only a copper sheet.

[0034] In this step S01, after the powder layer of the barrier layer is sintered, the powder is sintered to form the barrier layer 2 contained in the electrode of the thermoelectric device de...

Embodiment 1

[0047] This embodiment provides a thermoelectric device electrode and a preparation method thereof. The electrode structure of the thermoelectric device is as follows figure 1 As shown, it includes a half-Heusler matrix layer 1, a barrier layer 2, a solder layer 3, and a copper electrode layer 4 stacked on the surface of the half-Heusler matrix layer 1. Wherein, the barrier layer 2 has a thickness of 0.5 mm, and the solder foil has a thickness of 0.05 mm. The thickness of the copper electrodes was 0.8 mm.

[0048] The preparation method of the thermoelectric device electrode in this embodiment is as follows:

[0049] Preparation of S11half-Heusler thermoelectric material bulk:

[0050] a Proportional weighing of the elemental elements used, arc smelting the elements other than Sb, weighing the required amount of Sb according to the obtained ingot proportioning after smelting, and grinding the above two materials to obtain a mixed powder Body; arc melting current is 150A, v...

Embodiment 2

[0060] This embodiment provides a thermoelectric device electrode and a preparation method thereof. The electrode structure of the thermoelectric device is the same as that of Example 1.

[0061] The preparation method of the thermoelectric device electrode of this embodiment is as follows:

[0062] S21 The preparation of the half-Heusler thermoelectric material block refers to S11 of Example 1; wherein, the material half-Heusler is n-type half-Heusler, and the temperature of SPS hot pressing is 850°C (n-type), and the sintering pressure is 35MPa, the highest sintering The temperature maintenance time is 10min-15min, and the cooling time is more than 25min. A graphite mold with an inner diameter of 15mm, a mold sleeve length of 40mm, a graphite indenter with an outer diameter of 14.6mm and a length of 25mm is used;

[0063] Step S12 in S22 parameter embodiment 1, wherein,

[0064] Sintering conditions: the sintering temperature of N-HH / barrier layer material is selected at 7...

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Abstract

The invention discloses a thermoelectric device and an electrode thereof, and a method for preparing an electrode. The electrode of the thermoelectric device comprises a half-Heusler matrix layer, a solder layer and an electrode layer which are laminated and combined and laminated in a manner. A barrier layer is arranged between the half-Heusler matrix layer and the solder layer in a laminated andcombined manner, wherein the barrier layer is a titanium-nickel alloy layer. According to the electrode, on the basis of the the titanium-nickel alloy layer structure, good thermal expansion matchingbetween the electrode layer and the contact interface of the half-Heusler matrix layer is realized; a diffusion layer formed between the interface has low thickness and the interface contact resistance is low; the thickness of the diffusion layer is stable with extension of service time, so that the interface stability is improved and thus the high thermoelectric conversion efficiency of the thermoelectric device is realized. Besides, because of the preparation method, stability of performances of the thermoelectric device electrode is guaranteed and the production efficiency is high.

Description

technical field [0001] The invention belongs to the technical field of thermoelectric conversion, and in particular relates to a thermoelectric device electrode, a preparation method thereof and a thermoelectric device. Background technique [0002] Thermoelectric power generation is a fully static power generation method that uses semiconductor thermoelectric conversion materials to convert the temperature difference (heat energy) at both ends of the material into electrical energy. It is an environmentally friendly green energy technology that can alleviate the current growing non-renewable energy consumption pressure and pollution. The question is of great significance. The power generation system has the characteristics of reliable performance, compact structure, no moving parts, no noise, no leakage, no wear, strong mobility, etc. It is suitable for the recovery and utilization of automobile exhaust waste heat and industrial waste heat. [0003] Half-Heusler-based ther...

Claims

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Application Information

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IPC IPC(8): H01L35/02H01L35/08H01L35/34
CPCH10N10/80H10N10/817H10N10/01
Inventor 刘福生刘斌李均钦敖伟琴张朝华
Owner SHENZHEN UNIV
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