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Preparation method of nano gallium nitride spherical powder

A spherical powder, gallium nitride powder technology, applied in the field of preparation of gallium nitride nanoparticles, can solve the problems of low target density, low preparation efficiency, poor fluidity and dispersibility, etc., and achieve optimized particle size distribution , Eliminate the powder agglomeration, the effect of excellent dispersibility

Active Publication Date: 2018-08-17
CHINA WEAPON SCI ACADEMY NINGBO BRANCH
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] In addition, there are methods such as the arc plasma method of preparing gallium nitride powder using gallium metal as the gallium source. Although these methods can prepare high-quality gallium nitride powder, the preparation conditions often require a high temperature and high pressure environment, and the cost High, and the preparation efficiency is extremely low, it is difficult to promote large-scale preparation
How to safely, pollution-free and efficient preparation of high-quality gallium nitride powder is the bottleneck problem hindering its industrial preparation
[0008] The prepared gallium nitride powder is mostly irregular shape or wire. Due to its poor fluidity and dispersion, it brings many adverse consequences to the pressing of the target, so that the pressed target is not dense and has obvious holes. , which is extremely unfavorable for the preparation of high-quality target materials and their matrix materials

Method used

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  • Preparation method of nano gallium nitride spherical powder
  • Preparation method of nano gallium nitride spherical powder
  • Preparation method of nano gallium nitride spherical powder

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0028] Embodiment 1, 20g particle diameter is 1-20 μ m, and purity is > 99.99% gallium oxide powder (such as figure 1 shown) into a microwave heating furnace full of ammonia for nitriding treatment, the process parameters are: the flow rate of ammonia gas is 5 standard liters / min, the power of the microwave heating furnace is 1kW, the reaction temperature is 900°C, and the reaction time is 3h.

[0029] The gallium nitride powder obtained by the reaction was put into a ball mill jar, ball milled for 5 minutes at a speed of 100 r / min, and vibratingly sieved with a 500-mesh screen.

[0030] The gallium nitride powder obtained by sieving is subjected to nano-processing, and the nano-processing parameters are

[0031] Table 1 Process parameters of induction plasma preparation of nano-gallium nitride

[0032]

[0033] figure 2 It is the SEM photo of the nano-gallium nitride spherical powder prepared by using the above process parameters. image 3 It is the XRD spectrum of the...

Embodiment 2

[0035] Example 2, put 20 g of gallium oxide powder with a particle size of 1-20 μm and a purity of >99.99% for nitriding treatment in a microwave heating furnace filled with ammonia gas. The process parameters are: the flow rate of ammonia gas is 3 standard liters / minute, The power of the microwave heating furnace is 3kW, the reaction temperature is 1100°C, and the reaction time is 2h.

[0036] The gallium nitride powder obtained by the reaction was put into a ball mill jar, and ball milled for 3 minutes at a speed of 200 r / min, and then vibratingly sieved by using a 325-mesh sieve.

[0037] The gallium nitride powder obtained by sieving is subjected to nano-processing, and the nano-processing parameters are

[0038] Table 2 Process parameters of induction plasma preparation of nano-gallium nitride

[0039]

[0040] The microwave heating furnace in this embodiment adopts the microwave oven of Longtai Microwave Thermal Engineering Co., Ltd. model as Hamilab-HV6, and the ind...

Embodiment 3

[0041] Example 3, put 20 g of gallium oxide powder with a particle size of 1-20 μm and a purity of >99.99% for nitriding treatment in a microwave heating furnace filled with ammonia gas. The process parameters are: the flow rate of ammonia gas is 1 standard liter / min, The power of the microwave heating furnace is 6kW, the reaction temperature is 1200°C, and the reaction time is 1h.

[0042] The gallium nitride powder obtained by the reaction was put into a ball mill jar, ball milled for 1 min at a speed of 300 r / min, and vibratingly sieved with a 200-mesh screen.

[0043] The gallium nitride powder obtained by sieving is subjected to nano-processing, and the nano-processing parameters are

[0044] Table 3 Process parameters of induction plasma preparation of nano-gallium nitride

[0045]

[0046]The microwave heating furnace in this embodiment adopts the microwave heating furnace of Longtai Microwave Thermal Engineering Co., Ltd. model as Hamilab-HV6, and the induction pla...

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Abstract

A nano gallium nitride spherical powder preparation method is characterized by including the following steps: putting a gallium oxide powder into a microwave heating device full of ammonia gas, and carrying out a reaction, to obtain a gallium nitride powder; and then carrying out ball-milling crushing of the gallium nitride powder, carrying out sieving treatment, and then carrying out induction plasma treatment to obtain the nano gallium nitride spherical powder. Compared with the prior art, the two-step method is adopted for preparation of the high-quality nano gallium nitride spherical powder, that is to say, the primary gallium nitride powder is prepared by the microwave solid-phase synthesis method firstly and then is further deeply processed through the induction plasma method; therefore, the purity of the gallium nitride powder can be improved, the powder can be nanocrystallized, and the gallium nitride powder with good dispersibility and high quality is obtained.

Description

technical field [0001] The invention relates to a preparation method of gallium nitride nanoparticles. It belongs to the field of supermicro technology in the Ministry of Operations and Transportation. Background technique [0002] Gallium nitride material is a typical representative of the third generation semiconductor. Due to its large direct bandgap (3.39eV), strong atomic bond, high thermal conductivity, good chemical stability and strong radiation resistance, it is widely used in blue light, purple light emitting devices (LED), lasers, high temperature sensing materials , microwave / communication power amplifiers, solar energy, targets and phosphors and other cutting-edge fields have broad application prospects. [0003] At present, most gallium nitride materials are prepared by chemical vapor deposition (CVD), metal-organic chemical vapor deposition (M°C CVD), molecular beam epitaxy (MBE), hydride vapor phase epitaxy (HVPE) and other techniques. Gallium is deposited...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C01B21/06B82Y40/00
CPCC01B21/0632C01P2002/72C01P2002/82C01P2004/03C01P2004/32C01P2004/51C01P2006/60
Inventor 杨文智黄伟明陈子明黄伟尚福军
Owner CHINA WEAPON SCI ACADEMY NINGBO BRANCH
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