Tri-strain BiCMOS (Bipolar Complementary Metal Oxide Semiconductor) integrated device based on SiGe HBT (Heterojunction Bipolar Transistor) and preparation method

Abstract

The invention discloses a tri-strain BiCMOS (Bipolar Complementary Metal Oxide Semiconductor) integrated device based on SiGe HBT (Heterojunction Bipolar Transistor) and a preparation method. A buried layer is prepared on a substrate, an N-Si layer, a P-SiGe layer and an N-Si layer are continuously grown, a dielectric layer is deposited, deep-groove isolation is prepared, a collector region, a base region and an emitter region are prepared, a collector electrode, base electrode and emitter electrode contact region is formed, and a SiGe HBT device is formed; active region deep grooves of an NMOS (N-channel Metal Oxide Semiconductor) device and a PMOS (P-channel Metal Oxide Semiconductor) device are etched, a P-type Si layer / a P-type SiGe gradient layer / a P-type SiGe layer / a P-type strain Si layer serving as the active region of the NMOS device and an N-type Si layer / an N-type strain SiGe layer / an N-type Si cap layer serving as the active region of the PMOS device are respectively and selectively grown in the deep grooves in an extending manner; a virtual grid electrode and a side wall are prepared, and source and drain electrodes of the NMOS and the PMOS device are formed through self-alignment; and the virtual grid is etched, a SiON grid dielectric layer and a W-TiN composite grid are deposited to form a CMOS structure, and finally the tri-stain BiCMOS integrated device and a circuit are constructed. Tensile strain Si with high electronic mobility and compressive strain SiGe with high hole mobility are sufficiently utilized as conducting channels for the NMOS device and the PMOS device, and the performance of the BiCMOS integrated circuit is effectively improved.

Description

technical field [0001] The invention belongs to the technical field of semiconductor integrated circuits, and in particular relates to a SiGe HBT-based three-strain BiCMOS integrated device and a preparation method. Background technique [0002] The integrated circuit, which appeared in 1958, is one of the most influential inventions of the 20th century. Microelectronics, which was born based on this invention, has become the basis of existing modern technology, accelerating the process of knowledge and informationization of human society, and at the same time changing the way of thinking of human beings. It not only provides humans with a powerful tool to transform nature, but also opens up a broad space for development. [0003] Semiconductor integrated circuits have become the basis of the electronics industry, and people's huge demand for the electronics industry has prompted the rapid development of this field. In the past few decades, the rapid development of the ele...

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Problems solved by technology

[0007] Due to the low mobility of Si materials, the performance of integrated circuits manufactured by Si BiCMOS technology, especially the frequency performance, is greatly limited; for SiGe BiCMOS technology, although SiGe HBT is used for bipolar transistors, However, Si CMOS is still used for unipolar devices that restrict the improvement of the frequency characteristics of BiCMOS integrated circuits, so these limit the further improvement of the performance of BiCMOS integrated circuits

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