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A preparation method of high-performance heat-radiating semiconductor planar light source

A planar light source and semiconductor technology, applied in the direction of semiconductor devices, semiconductor devices of light-emitting elements, light sources, etc., can solve the problems of poor heat transfer performance of LED light sources, reduced luminous efficiency of chips, and poor reliability of light sources, etc., to facilitate heat dissipation , Reliability and life improvement, and the effect of reducing light loss

Inactive Publication Date: 2010-09-01
刘素霞
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The comprehensive thermal resistance is large, and the actual effective heat transfer efficiency is low; in addition, the insulating layer between the conductive layer on the surface of the composite aluminum-based circuit board and the aluminum substrate is generally made of composite materials such as epoxy resin and alumina particles, The thermal conductivity is not ideal, so the LED light source manufactured in this way has poor heat transfer performance, and the temperature of the LED chip is high when it is working, which reduces the luminous efficiency of the chip, and the light intensity attenuation is large. At the same time, the reliability of the light source is deteriorated. shortened lifespan

Method used

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  • A preparation method of high-performance heat-radiating semiconductor planar light source
  • A preparation method of high-performance heat-radiating semiconductor planar light source
  • A preparation method of high-performance heat-radiating semiconductor planar light source

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Experimental program
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Effect test

Embodiment 1

[0021] Mix and stir 10g of 100nm-10μm diamond particles, 100g of polyethylene glycol and 50g of silica gel to form a slurry;

[0022] Print the composite paste on the surface of the aluminum substrate 1 by screen printing, heat it to 300-400°C in a vacuum environment, and keep the temperature for 1-2h, and form a dense diamond film 2 after the organic components in the paste volatilize , after high temperature treatment, the film thickness is about 20-30μm, such as figure 2 As shown, the insulating high thermal conductivity diamond film 2 is composed of large diamond particles 21 with a thermal conductivity of 1000-2000W / K*m and a particle size of 0.1-10 μm, and large diamond particles 21 filled with particles of a particle size of 1-100nm small diamond particles 22, so that the diamond film 2 is dense, and the thermal conductivity between the large diamond particles 22 can be enhanced;

[0023] Use the conductive silver paste to print on the surface of the aluminum-based di...

Embodiment 2

[0027] 8g of diamond particles of 250nm-5μm are mixed with 80g of polyethylene glycol and 100g of silica gel to form a slurry;

[0028] Print this slurry on the surface of the aluminum substrate 1 by using the traditional scraping method, heat it to 200-300°C in the atmosphere, and keep the temperature for 0.5-1.5h. The organic components in the composite slurry volatilize to form a dense diamond film. 2. After high temperature treatment, the thickness of diamond film is about 15-20μm;

[0029] A copper film is directly deposited on the surface of the aluminum-based diamond film 2 as the conductive layer 3 by magnetron sputtering and other techniques, and then according to the circuit design, the required circuit pattern is obtained by etching.

[0030] The LED chip 4 is directly welded on the surface of the diamond film 2 at the hollowed-out part of the conductive layer 3 in the designed composite aluminum substrate, and then the positive and negative electrodes of the LED ch...

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Abstract

The present invention relates to the technical field of semiconductor lighting. Concretely speaking, the invention is a preparation method of high-performance heat-radiating semiconductor planar light source, the diamond particle composite material with good insulating property and high heat transfer efficiency is used to prepare aluminum-based circuit board as the circuit substrate of LED chip. LED chip is directly bonded or welded to this wired composite circuit board to improve the heat transfer efficiency of the chip; meanwhile diamond particles are mixed into transparent silica gel to form composite material that is highly conductive to heat and conducts and scatters light. The composite material is directly used to encapsulate LED chips. Comparing with prior art, diamond particle composite material greatly raises the reliability and life of light source module; the transparent silica gel containing nano diamond particles can quickly disperse heat, plays a role of light conduction and scattering, turns LED point light source to an area light source, reduces light loss, and meanwhile simplifies the steps of LED encapsulation process, reduces the manufacturing cost of light sources and facilitates large-scale production.

Description

[technical field] [0001] The invention relates to the technical field of semiconductor lighting, in particular to a method for preparing a high-efficiency heat dissipation semiconductor planar light source. [Background technique] [0002] Semiconductor lighting is a new type of high-efficiency solid light source made of light-emitting diode LED, namely Light Emitting Diode. It has many advantages such as long life, energy saving, economy, green environmental protection, rich colors, and miniaturization. It is gradually replacing traditional incandescent lighting. lamps and fluorescent lamps. As a lighting application, the development trend of LED is to develop high-power chips with high luminous efficiency, so that the luminous flux of a single chip can be as high as possible to meet the needs of general lighting. [0003] With the increase of the power of the chip, the current required for the chip to emit light is getting larger and larger, causing local heat to increase ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): F21S2/00F21V23/00H01L33/00F21V29/00F21V19/00F21Y101/02F21K9/20F21V29/70F21Y115/10
Inventor 刘素霞
Owner 刘素霞
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