Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Micro- machining gas sensor and method for making same

A gas-sensing element and micro-machining technology, applied in the field of gas-sensing sensors, can solve the problem that the components cannot be miniaturized, and achieve the effect of reducing the area of ​​the components, reducing the manufacturing cost, and simplifying the packaging process

Inactive Publication Date: 2008-08-13
SUN YAT SEN UNIV
View PDF0 Cites 15 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] Aiming at the problem that an additional heating electrode or heating device needs to be made for the gas sensing element and the element cannot be miniaturized, the purpose of the present invention is to provide a micro-processed gas sensing element and its preparation method without using additional heating components , the manufacturing process of the element structure can be simplified, and the manufacturing cost can be reduced. More importantly, the micromachining method in the present invention can also realize the miniaturization of the gas sensor, which is beneficial to reduce power consumption and realize batch growth

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Micro- machining gas sensor and method for making same
  • Micro- machining gas sensor and method for making same

Examples

Experimental program
Comparison scheme
Effect test

preparation example Construction

[0017] The preparation method of the above micro-processed gas sensor comprises the following steps:

[0018] First, the microelectrodes are fabricated on the substrate through micromachining technology. Micro-processing technology can use existing technologies, including: optical lithography, electron beam lithography, X-ray lithography, laser lithography, electrochemical corrosion, microparticle spraying, screen printing or film printing, etc. Existing technologies can be used to make microelectrode conductive materials, including: ion sputtering, electron beam evaporation, thermal evaporation, vacuum arc plasma coating, thermal spraying or electrostatic spraying, etc.

[0019] Then, cover the gas-sensitive material layer on the above-mentioned substrate and micro-electrodes to make a substrate component. The preparation method of the gas-sensitive material layer can adopt the existing technology, including sputtering, thermal evaporation, screen printing, aqueous solution ...

Embodiment 1

[0022] In this embodiment, a ceramic sheet with a thickness of 0.25mm is used as the substrate 11, and the unit area of ​​the substrate is 1.5×1.5mm 2 . The microelectrode 12 is a single pair spaced back-shaped wire structure with a line width of 0.1 mm and a line spacing of 50 μm. The preparation method comprises the following steps:

[0023] a. The substrate 11 is pre-baked on a hot plate for 30 minutes, and the pre-baking temperature is 120° C.

[0024] b. A layer of Ruihong (RZJ-390PG) positive photoresist was evenly spin-coated on the surface of the substrate 11 with a Karl Suss R8 coating machine, and the coating speed was 3000 rpm for 60 seconds.

[0025] c. After gluing, place the substrate 11 on a hot plate for baking. The temperature of the hot plate is 120° C., and the baking time is 120 seconds.

[0026] d. After the baking is completed, use a Karl Suss MA45 photolithography machine to expose the sample to ultraviolet light for 15 seconds. During the exposure pr...

Embodiment 2

[0036] The steps of this embodiment are basically the same as those of Embodiment 1, except for the preparation of step j gas-sensitive material layer 13: In this embodiment, a layer of nanowires whose main component is tungsten oxide is grown on the substrate electrode by thermal evaporation to form film structure.

[0037] The gas sensing characteristic of this embodiment is shown in Fig. 4 . The gas sensor grown with tungsten oxide nanostructure material is 1% H under the condition of 2V DC power supply 2 The response current versus time curve. Among them, I represents the current flowing through the metal electrode, and t represents the time. When the device is in the air, its current value is about 89mA. When hydrogen gas appears, the current value of the device starts to increase, and reaches a stable value of about 120mA within 1 minute. When the hydrogen gas is discharged, the device current value begins to decrease, and finally falls back. to the original current v...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
Areaaaaaaaaaaa
Thicknessaaaaaaaaaa
Line widthaaaaaaaaaa
Login to View More

Abstract

The present invention relates to a micro-machining gas sensor and preparation method thereof, which includes tube base, substrates parts and connected parts to connect the tube base and substrates parts. Wherein, the substrates parts comprises of substrates, microelectrode on the substrates, low resistant gas-sensing material layer coated on substrates and microelectrode from bottom to top. Interval microelectrode bar is made on substrates by micro-machining technics, and low resistant gas-sensing material layer is coated on the substrates and microelectrode to form substrates parts which is electrified to work in heat insulation state. Required working temperature obtained by joule heat produced by resistance in series and electrified microelectrode of gas sensor of present invention without adding heating electrode or heating device, the encapsulation techics of device and complexity of subsequent conditioning circuit are predigested, preparation cost is reduced and produce efficient is improved. The present invention is suit for batch produce, and shortened elements area of the present invention realizes gas sensor miniaturization and element power consumption reduced.

Description

technical field [0001] The invention belongs to the field of gas-sensitive sensors, and in particular relates to a micro-processed gas-sensitive sensor element and a preparation method thereof. Background technique [0002] At present, the structure of the gas sensing element is mainly ceramic tube type, microbead type, and planar type. Ceramic type and microbead type gas sensors are mainly made by hand, which has low production efficiency and poor consistency of component parameters. The planar gas sensing element can be combined with screen printing technology, which greatly improves the parameter uniformity rate, yield rate, and production efficiency of the element. At present, the existing planar gas sensing electrode structure mainly includes two parts: the heating electrode and the gas sensing signal reading electrode. The gas-sensing signal reading electrode is made on the other end face of the component substrate; the second is to directly prepare the two electrode...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): G01N27/407
Inventor 许宁生朱联烽佘峻聪邓少芝陈军
Owner SUN YAT SEN UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products