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A preparation method for lead-free piezoelectricity thick film

A lead-free piezoelectric and thick film technology, applied in the manufacture/assembly of piezoelectric/electrostrictive devices, piezoelectric/electrostrictive/magnetostrictive devices, circuits, etc., can solve the problems of staying body materials, etc. Achieve dense film formation, excellent electrical properties, and high solid phase content

Inactive Publication Date: 2008-07-09
HUAZHONG UNIV OF SCI & TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Sodium bismuth titanate-based, barium titanate-based and sodium niobate-based piezoelectric materials are considered to be the most potential lead-free piezoelectric systems, but the current research almost stays on bulk materials.

Method used

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  • A preparation method for lead-free piezoelectricity thick film
  • A preparation method for lead-free piezoelectricity thick film

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0040] 8.48 grams of sodium carbonate (Na 2 CO 3 ), 2.76 grams of potassium carbonate (K 2 CO 3 ), 46.6 grams of bismuth oxide (Bi 2 o 3 ) mixed with absolute ethanol and ball milled for 4 hours, poured into a square pan and placed in an oven for drying at 90°C, pre-compressed and pre-fired at 800°C and 850°C for 2 hours each, ball milled for 8 hours and then dried through a 200-mesh sieve to obtain About 140 grams (Na 0.82 K 0.18 ) 0.5 Bi 0.5 TiO 3 Piezoelectric ceramic powder; add 0.5 g of ethyl cellulose to 10 g of terpineol and stir at 55°C until completely dissolved, add 35 g of piezoelectric ceramic powder, mix and grind, and add 1 g of diethylene glycol butyl Ether acetate and 0.5 g of dibutyl phthalate are poured into a ball mill jar, mixed and ball milled for 4 hours to obtain a thick film slurry to be printed. Use a 320 mesh screen to print to a size of 20×15×0.5mm with a Pt electrode 3 On the aluminum oxide substrate, after 10 minutes, put it flat, then ba...

Embodiment 2

[0042] Make about 140 grams (Na 0.82 K 0.18 ) 0.5 Bi 0.5 TiO 3 Piezoelectric ceramic powder, add 0.5 g of ethyl cellulose to 10 g of terpineol and stir at 55°C until completely dissolved, add 35 g of piezoelectric ceramic powder, mix and grind, and add 0.5 g of phthalic acid di Use butyl ester as a plasticizer, pour it into a ball mill tank and mix it for 4 hours to get a thick film slurry to be printed, and use a 320 mesh screen to print to Pt / Ti / SiO 2 On the substrate, after 10 minutes, lay it flat, then bake it at 120°C for 10 minutes, then put it into a rapid heat treatment furnace at 550°C to pre-burn the organic matter, repeat printing for 8 layers, and then put the thick film biscuit into the muffle furnace for 1140 ℃ sintering and heat preservation for 30 minutes (the heating rate is 5 ℃ / min), and a bismuth sodium titanate-based lead-free piezoelectric thick film material with a thickness of about 40 μm is obtained. After the surface of the thick film is polished ...

Embodiment 3

[0044] Mix 65.67 grams of barium carbonate, 76.70 grams of titanium dioxide and 1.025 grams of zirconium dioxide, add absolute ethanol and ball mill for 2 hours, pour it into a square pan and put it in an oven for drying at 90°C, pre-compress and pre-fire at 850°C for 4 hours, ball mill After 7 hours, dry and pass through a 200-mesh sieve to obtain about 100 grams of BaTi 0.975 Zr 0.025 o 3 Piezoelectric ceramic powder, according to the method of Example 1 to prepare a thick-film biscuit, put it into a muffle furnace and carry out sintering at 1300 ° C for 30 minutes (heating rate is 5 ° C / min) to obtain about 40 μm thick barium titanate-based lead-free Piezoelectric thick film materials. After the surface of the thick film is polished and polished, the Pt upper electrode is prepared by sputtering to test the properties of the thick film. The dielectric constant at 10KHz is 816, the dielectric loss is 3.7%, and the residual polarization is 14.8μC / cm 2 , the coercive field...

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Abstract

The invention discloses a silk screen printing preparation method of a lead-free piezoelectric thick-film, including: (1) the lead-free piezoelectric ceramic powder is prepared by adopting a solid phase method; (2) an adhesive is dissolved in terpineol according to the weight ratio of 3: 100 to 9: 100 so as to obtain an organic mixture; (3) the lead-free piezoelectric ceramic powder and the organic mixture are mixed according to the weight ratio of 15: 10 to 90: 10, a dispersant and a plasticizer are added for mixing, grinding and ball milling so as to obtain a paste which is ready to be printed; (4) the paste is printed on a substrate by adopting a silk screen printing technology, a thick-film blank with needed thickness is obtained by being placed flat, baking, preburning and repeated operation; (5) the blank is treated with sintering below 1050 to 1300 DEG C, and heat preservation is kept for 15 to 45 minutes. The invention has simple technology, environmental protection, high efficiency of film formation, good reproducibility, dense film formation and excellent electrical performances, the thickness can be controlled arbitrarily between 10 and 100Mum, various printing thick-film patterns can be obtained without a lithography technology; the invention is compatible with the MEMS technology and is applicable to the preparation of piezoelectric micro-motors, micro-fluid pumps, ultrasonic transducers and micro-actuators.

Description

technical field [0001] The invention belongs to the technical field of preparation of functional ceramic thick films, and in particular relates to a screen printing preparation method of lead-free piezoelectric thick films. Background technique [0002] Piezoelectric thick film usually refers to a piezoelectric film with a thickness of 10-100 μm. Compared with thin films, its piezoelectric and ferroelectric properties are less affected by interfaces and surfaces, and larger thicknesses can also generate greater driving force. , and has higher sensitivity and wider operating frequency; compared with bulk materials, piezoelectric thick film has low operating voltage (<5V), high frequency of use, and is compatible with semiconductor processes. Therefore, piezoelectric thick films are widely used in microactuators, piezoelectric micromotors, microfluidic pumps, inkjet print heads, ultrasonic transducers, hearing aids, sonar hydrophones, and microelectromechanical systems (MEM...

Claims

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Application Information

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IPC IPC(8): H01L41/22H01L41/314
Inventor 张海波姜胜林曾亦可钟南海张洋洋
Owner HUAZHONG UNIV OF SCI & TECH
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