The invention discloses thermal interface materials and a manufacturing method of the thermal interface materials. The interface materials are formed by means of heating and oxidization of metals such as gallium, indium, mercury, sodium, potassium, cesium or binary alloy and multicomponent alloy of the cesium. The manufacturing method comprises the following steps: selecting metals such as the gallium, the indium, the mercury, the sodium, the potassium, the cesium or the binary alloy and the multicomponent alloy of the cesium, and enabling the metals or the alloy to become liquid and enabling the liquid metals or the alloy to be placed in air or oxygen through heating. By means of placing the metals such as the gallium, the indium, the mercury, the sodium, the potassium, the cesium or the binary alloy and the multicomponent alloy of the cesium in the air and the oxygen to be oxidized to form the thermal interface materials, wettability between metal-based fluid and each interface can be greatly enhanced, thereby requirements of the thermal interface materials can be met. Due to the good thermal and wetting properties, the thermal interface materials can play significant roles in an aspect of electric chip thermal conductivity of the fields such as cryogenic engineering, boosters of computers, satellites and rockets and laser device.