143 results about "Reading level" patented technology

Systems and methods in accordance with various embodiments can provide for reduced program disturb in non-volatile semiconductor memory. In one embodiment, select memory cells such as those connected to a last word line of a NAND string are programmed using one or more program verify levels or voltages that are different than a corresponding level used to program other cells or word lines. One exemplary embodiment includes using a lower threshold voltage verify level for select physical states when programming the last word line to be programmed for a string during a program operation. Another embodiment includes applying a lower program voltage to program memory cells of the last word line to select physical states. Additional read levels are established for reading the states programmed using lower verify levels in some exemplary implementations. A second program voltage step size that is larger than a nominal step size is used in one embodiment when programming select memory cells or word lines, such as the last word line to be programmed for a NAND string.

Various read level control apparatuses and methods are provided. In various embodiments, the read level control apparatuses may include an error control code (ECC) decoding unit for ECC decoding data read from a storage unit, and a monitoring unit for monitoring a bit error rate (BER) based on the ECC decoded data and the read data. The apparatus may additionally include an error determination unit for determining an error rate of the read data based on the monitored BER, and a level control unit for controlling a read level of the storage unit based on the error rate.

Search systems and methods address the subjective nature of the relevancy of matches to users' queries through the use of readability formulae. As a result, the documents are ranked by relevance not only to user queries, but specifically to the user. In one approach, the searchable web (or a searchable corpus of documents) is categorized on one or more servers. Each document is designated by reading level or other parameter(s) relevant to the user's reading ability. In one embodiment, searching is carried out utilizing the user's search query, and documents are ranked based on relevance to the query and on their degree of readability to the user—e.g., the degree to which the contents of each document correspond to the user's reading level. Advertisement displays may be targeted to both the search tokens entered and the user's age as determined from his reading level, rendering search-related advertisements significantly more effective in reaching their intended audiences.

Disclosed is a memory system provided with: a nonvolatile semiconductor storage device, which has a memory cell array having a plurality of blocks including a plurality of memory cells, and a voltage generating unit which can change the read level of the memory cells,and a control unit which controls write, read and erase of the nonvolatile semiconductor storage device. The control unit changes the read level at the start of using the nonvolatile semiconductor storage device and at a certain time after the start.

A media capture system employing a method for capturing a media stream and embedding time-based links into the resulting output for the purpose of associating the media information with other artifacts and thereby having the capability of searching for one or more pieces of information, retrieving that information, and displaying segments of the media content based on the search criteria specified by the user. The queried information may be text descriptions, pointer titles, thermal reading levels, motion periods and / or motion levels, object types, as well as other interesting information.

The system and methods of the present application comprise one or more computers that determine the reading level of a reader and recommend books to the reader. Information and computer software stored and executed on a general purpose computer provide a user with the ability to determine the reader's capacity to read and comprehend, and recommends books that are within the reader's capacity. The system and methods also determine subject matter that the reader seeks, and recommends books associated with the subject matters sought.

Provided are memory devices and read level controlling methods. A memory device may include: a memory cell array that includes a plurality of memory cells; a counter that counts a number of memory cells with a threshold voltage included in a reference threshold voltage interval among the plurality of memory cells; a first decision unit that compares the counted number of memory cells with a threshold value to thereby decide whether to set a read level based on the reference threshold voltage interval; and a second decision unit that generates a new reference threshold voltage interval based on the comparison result between the counted number of memory cells and the threshold value.

Techniques for dynamic personalized reading instruction at word and sentence level are provided by determining word recognition level and learning gradient information for a user. Comprehension aids are associated with words classified by word recognition level and stored. Word recognition errors are determined comprehension aids presented and word recognition level adjusted based on determined word recognition errors, learning gradient and current word recognition level. For sentence level dynamic personalized reading instruction personalization information, reading level and learning gradient are determined and a personalized grammatical tunable text summary generated. Based on the personalized grammatical tunable text summary, comprehension questions are generated and displayed. Based on comprehension responses, learning gradient and personalization information, the reading level is adjusted. Personalized reading instruction is provided by selectively changing display attributes of more salient information to help a user identify the important information in the sentence and to maintain fluid reading.

Techniques for dynamic personalized reading instruction at word and sentence level are provided by determining word recognition level and learning gradient information for a user. Comprehension aids are associated with words classified by word recognition level and stored. Word recognition errors are determined, comprehension aids presented and word recognition level adjusted based on determined word recognition errors, learning gradient and current word recognition level. For sentence level dynamic personalized reading instruction personalization information, reading level and learning gradient are determined and a personalized grammatical tunable text summary generated. Based on the personalized grammatical tunable text summary, comprehension questions are generated and displayed. Based on comprehension responses, learning gradient and personalization information, the reading level is adjusted. Personalized reading instruction is provided by selectively changing display attributes of more salient information to help a user identify the important information in the sentence and to maintain fluid reading.

In accordance with at least one embodiment, a method and apparatus for improving the ability to correct errors in memory devices is described. At least one embodiment provides a way to salvage the part even it has double-bit or multi-bit error from the same ECC section, thus improving product reliability and extending the product lifetime. During a normal read, if a double-bit or multiple-bit error happens, which ECC can detect but cannot fix, the error is corrected by adjusting the read voltage level and reading again to determine the proper read level (and, therefore, the correct value being read). This dynamic read scheme can apply to extrinsic bits from either erase state or program state. It can be also used in a single bit scenario to minimize ECC occurrence and save ECC capacity.

In a method of reading data from a nonvolatile memory device, a first read operation for memory cells coupled to a first word line is performed by applying a first read voltage to the first word line, a first read retry is performed to obtain an optimal read level regardless or independent of whether data read by the first read operation is error-correctable, and the optimal read level is stored to perform a subsequent second read operation using the optimal read level. Related methods and devices are also discussed.

Dynamically determining read levels on chip (e.g., memory die) is disclosed herein. One method comprises reading a group of non-volatile storage elements on a memory die at a first set of read levels. Results of the two most recent of the read levels are stored on the memory die. A count of how many of the non-volatile storage elements in the group showed a different result between the reads for the two most recent read levels is determined. The determining is performed on the memory die using the results stored on the memory die. A dynamic read level is determined for distinguishing between a first pair of adjacent data states of the plurality of data states based on the read level when the count reaches a pre-determined criterion. Note that the read level may be dynamically determined on the memory die.

Provided are memory devices and read level controlling methods. A memory device may include: a memory cell array that includes a plurality of memory cells; a counter that counts a number of memory cells with a threshold voltage included in a reference threshold voltage interval among the plurality of memory cells; a first decision unit that compares the counted number of memory cells with a threshold value to thereby decide whether to set a read level based on the reference threshold voltage interval; and a second decision unit that generates a new reference threshold voltage interval based on the comparison result between the counted number of memory cells and the threshold value.

In a memory cell array, a plurality of memory cells each of which stores a plurality of bits are connected to a plurality of word lines and a plurality of bit lines and are arranged in a matrix. Control portions read a threshold level of a second memory cell adjacent to a first memory cell in the memory cell array, determine a correction level according to the threshold level read from the second memory cell, add the determined correction level to a read level of the first memory cell, and then read the threshold level of the first memory cell. A storage portion stores the correction level.

A power supply voltage containing a noise component is supplied to each pixel at the time of sampling of a reset level of a signal read out from each pixel, and a power supply voltage in which the noise component is suppressed is supplied to each pixel at the time of sampling of a read level of the signal read out from each pixel.

In a method of reading data from a nonvolatile memory device, a first read operation for memory cells coupled to a first word line is performed by applying a first read voltage to the first word line, a first read retry is performed to obtain an optimal read level regardless or independent of whether data read by the first read operation is error-correctable, and the optimal read level is stored to perform a subsequent second read operation using the optimal read level. Related methods and devices are also discussed.

A presentation of textual material is provided in a “role-play” reading format which has text corresponding to the dialogue of a plurality of characters in order to facilitate reading aloud in a group. The text for the dialogue of a plurality of characters is presented in a different indicia throughout substantially all the presentation. Preferably the indicia is color so the dialogue for each character is in a different color. The text for each character is also selected and presented at a level corresponding to the reading level of the reader selecting or assigned to read each character. The text is preferably selected from among a plurality of texts pre-written at substantially different reading levels. The reading material can be presented on paper, or on media suitable for display on an electronic screen. The text for each character is in a size and font suitable for the reading level of the reader selecting or assigned to read the dialogue for the character. A legend on each page of the reading material correlates the identity of each reader with the character or characters selected or assigned to be read by each reader, and with the indicia applied to the dialogue for each character.

Various read level control apparatuses and methods are provided. In various embodiments, the read level control apparatuses may include an error control code (ECC) decoding unit for ECC decoding data read from a storage unit, and a monitoring unit for monitoring a bit error rate (BER) based on the ECC decoded data and the read data. The apparatus may additionally include an error determination unit for determining an error rate of the read data based on the monitored BER, and a level control unit for controlling a read level of the storage unit based on the error rate.

In a memory cell array, a plurality of memory cells each of which stores a plurality of bits are connected to a plurality of word lines and a plurality of bit lines and are arranged in a matrix. Control portions read a threshold level of a second memory cell adjacent to a first memory cell in the memory cell array, determine a correction level according to the threshold level read from the second memory cell, add the determined correction level to a read level of the first memory cell, and then read the threshold level of the first memory cell. A storage portion stores the correction level.

The invention discloses an efficient training method and system aiming at English reading questions. Initial evaluation grades are matched according to student grade information, the difficulty of anarticle to be matched is synthetically calculated according to testing of a student, it is guaranteed that the article is suitable for the student to read, and the situation of too hard or too simpleis avoided. The student can practice the reading capacity with the English article corresponding to the English reading level of the student; articles and questions are matched according to level of students, the questions for students are different from each other, but are matched with study level and study requirements of the students; according to different types of question inspection point, when the students answer wrong, different indications are given, the good question solution thinking habit is helped to build, the students are helped to comb the context of the articles to summarize the main ideas of the articles; and except the solution answer of the questions, common reading wrong reasons of Chinese junior high school students and question setting traps are summarized, the intention of question setters is known by the students, question solution skills are mastered, and the mode of drawing inferences about other cases from one instance is achieved.

Apparatus, systems, and methods described herein may operate to receive an external read command at a control circuit coupled to a memory array. Individual wordline activation may be delayed according to a delay period determined by a read level voltage magnitude associated with a plurality of memory cells included in the array.

A method of decoding data of a non-volatile memory device is provided. The method includes a first decoding operation of reading first hard decision data from the non-volatile memory device using a first hard decision read level and performing decoding using the first hard decision data; a second decoding operation of reading first soft decision data from the non-volatile memory device when the decoding fails in the first decoding operation, and performing decoding using the first soft decision; and a third decoding operation of changing from the first hard decision read level to a second hard decision read level when the decoding fails in the second decoding operation, reading second hard decision data using the second hard decision read level, and performing decoding either using the second hard decision data or using both the second hard decision data and the first soft decision data.

An image processing apparatus, method and computer program product, wherein an initializing process of a scanner is performed in a short period of time when a return operation from a shutdown state is performed. A carriage of the scanner stays in a white level range when the main body is put in the shutdown state. Thus, the scanner immediately makes an automatic adjustment to its image reading level when the return operation from the shutdown state is started. The carriage detects an original position for a scanning operation while it moves to a standby position after the automatic adjustment is made. Thereby, the initializing process of the scanner is performed eliminating an operation of the carriage in which the carriage moves to the white plate range to read the white plate.

The invention discloses a text reading level evaluation method and device and a computer readable storage medium. The text reading level evaluation method comprises the following steps of: determininga text to be read according to a preset recommendation strategy, and displaying the text to be read; acquiring reading voice information, and comparing the reading voice information with the text tobe read to obtain a current score; and outputting the current score. The text to be read is recommended to a user according to the preset recommendation strategy, so that the learning interest of theuser is improved. By acquiring the reading voice information of the user, and comparing the reading voice information with the text to be read to obtain the current score, the user can clearly understand the learning situation, and the self-learning experience of the user is improved.

Reading methods of a nonvolatile semiconductor memory device are described herein. Methods may include supplying, to a word line, one of a voltage corresponding to a highest reading level or a voltage having a level higher than a first reading level of a read operation to be performed on the word line, and subsequently supplying a voltage of the first reading level to the word line and performing the read operation.

The invention relates to a multi-LED display module management method, which can be applied to an LED display screen system comprising a receiving card and cascaded multiple LED display modules. The multi-LED display module management method comprises a step of wire arrangement detection and a step of point detection. According to the step of wire arrangement detection, multiple signal lines serve as the current external interrupt source one by one by using a timer to realize wire arrangement detection. According to the step of point detection, a timer capture mode or an external interrupt mode is used for reading level values of RGB data lines in the multiple signal lines to obtain point detection result data and store the data. Through carrying out program design on a microprocessor module of each LED display module, intelligent management on the LED display module is realized, and by using serial port communication, wire arrangement detection is thus realized, and even multiple functions such as point detection, IAP functions, working temperature recording, working voltage recording, flash memory management, and authorization management can be realized.

Multiple reads of memory cells of a flash memory device are initiated at different read levels to obtain raw data. For each different read level, multiple decoding operations are initiated to decode the raw data, each decoding operation using a different one of a plurality of sets of decoding information associated with the different read level. Decoding success rates are determined for one or more of the plurality of sets based on the one or more of the plurality of sets being used to successfully decode data and, for each different read level, an order of the plurality of sets is determined based on the determined success rates. A selected set of decoding information is selected for use in decoding raw data obtained from a read performed at a respective read level based on the respective read level and the set order of the plurality of sets for the respective read level.