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A preparation method of high thermal conductivity diamond-reinforced silicon carbide substrate

A diamond-enhanced, silicon carbide substrate technology, applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve the interface strength between SiC and diamond, thermal conductivity of nucleation defects, etching interface strength, interface thermal stress, etc. question

Active Publication Date: 2022-04-15
UNIV OF SCI & TECH BEIJING +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Solve problems such as plasma etching, interface strength, interface thermal conductivity, and stress
Especially to solve the problem that the stress, SiC and diamond interface strength and nucleation defects affect the thermal conductivity of the SiC substrate that has been deposited with a thin layer of diamond in the process of SiC thinning or high temperature deposition of GaN on the SiC surface

Method used

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  • A preparation method of high thermal conductivity diamond-reinforced silicon carbide substrate

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Experimental program
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Effect test

specific Embodiment approach 1

[0030] UV lithography is achieved by spin-coating photoresist on the carbon polar side of SiC and through a mask-based mask. Then, periodic micropores with a diameter of 2 μm and an interval of 4 μm are realized by developing and degumming, and the periodically arranged diamond patterned surface is exposed. The SiC with patterned photoresist was first deposited with a Ti metal mask of 50 nm and then deposited with an Al metal of 150 nm by electron beam evaporation. Then, after removing the residual photoresist, SiC with a metal pattern mask deposited on the surface is obtained. on SiC by taking the gas source CF 4 :O 2 The SiC was etched to an etching depth of 2 μm under the condition of a ratio of 5:1 and a bias power of 300 W. The metal mask is then removed by chemical dissolution. The SiC is then passed through pure CF again 4 The SiC was etched under the bias power of 20W to realize the arc-shaped etching of the edge of the micropillar. Then, the patterned SiC sheet ...

specific Embodiment approach 2

[0031] UV lithography is achieved by spin-coating photoresist on the carbon polar side of SiC and through a mask-based mask. Then, periodic micropores with a diameter of 2 μm and an interval of 2 μm are realized by developing and degumming, and the periodically arranged diamond patterned surface is exposed. The SiC with patterned photoresist was first deposited with a Ti metal mask of 30 nm and then deposited with an Al metal of 120 nm by electron beam evaporation. Then, after removing the residual photoresist, SiC with a metal pattern mask deposited on the surface is obtained. on SiC by taking the gas source CF 4 :O 2 The SiC was etched to an etching depth of 1 μm under the condition of a ratio of 4:1 and a bias power of 200 W. The metal mask is then removed by chemical dissolution. The SiC is then passed through pure CF again 4 The SiC was etched under the bias power of 10W to realize the arc-shaped etching of the edge of the micropillar. Then, the patterned SiC sheet ...

specific Embodiment approach 3

[0032] UV lithography is achieved by spin-coating photoresist on the carbon polar side of SiC and through a mask-based mask. Then, periodic micropores with a diameter of 5 μm and an interval of 8 μm are realized by developing and degumming, and the periodically arranged diamond patterned surface is exposed. The SiC with patterned photoresist was first deposited with a Ti metal mask of 40 nm and then deposited with an Al metal of 150 nm by electron beam evaporation. Then, after removing the residual photoresist, SiC with a metal pattern mask deposited on the surface is obtained. on SiC by taking the gas source CF 4 :O 2 The SiC was etched to an etching depth of 3 μm under the condition of a ratio of 2:1 and a bias power of 100 W. The metal mask is then removed by chemical dissolution. The SiC is then passed through pure CF again 4 The SiC was etched under the bias power of 10W to realize the arc-shaped etching of the edge of the micropillar. Then, the patterned SiC sheet ...

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Abstract

The invention discloses a method for preparing a high thermal conductivity diamond reinforced silicon carbide (SiC) substrate, which belongs to the field of semiconductor material preparation. In the present invention, patterning is realized on the carbon polar surface of SiC through glue coating, photolithography and development. This is followed by electron beam evaporation or magnetron sputtering of the metal mask. After removing the photoresist, the SiC with periodically arranged metal masks is subjected to reactive ion etching, mask removal, and secondary ion etching to obtain a microcolumn array. The diamond layer is then grown by microwave plasma chemical vapor deposition technique. After the diamond layer completely covers the micropillars and has a certain thickness, laser scanning planarization and subsequent precision polishing are used to obtain a diamond-reinforced SiC substrate with high thermal conductivity. By increasing the effective contact interface area between diamond and SiC, the heat conduction efficiency is improved, and at the same time, the insufficient bonding force of the single-plane interface and the expansion of local defects are effectively avoided. It lays the foundation for obtaining high-power, high-frequency SiC / Diamond and GaN / SiC / Diamond wafers for future SiC silicon polar face thinning and high-temperature deposition of GaN on the surface.

Description

technical field [0001] The invention belongs to the field of semiconductor material preparation, and relates to a preparation method of a high thermal conductivity diamond reinforced silicon carbide substrate. Background technique [0002] Silicon carbide (SiC) and gallium nitride (GaN), as a wide-bandgap semiconductor, are ideal materials for radio frequency and power devices. In the development of future photovoltaic industry, high-speed train, electric vehicle, 5G radio frequency, satellite communication and radar technology will play an increasingly important role. High strength and hardness, high thermal shock resistance and corrosion resistance make SiC excellent in extreme temperature environments. In addition, as a representative third-generation semiconductor material, SiC can be used as high-power, high-frequency electronic devices in harsh environments by taking advantage of its wide band gap and high dielectric breakdown electric field strength. However, for th...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/04H01L21/3065H01L21/308
CPCH01L21/0475H01L21/3086H01L21/3065
Inventor 郑宇亭李成明张钦睿刘思彤魏俊俊郝志恒刘金龙陈良贤安康张建军
Owner UNIV OF SCI & TECH BEIJING
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