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Preparation method of IGBT ceramic substrate

A technology of ceramic substrate and preparation process, which is applied in the field of ceramic material processing, can solve the problems of difficult grinding, easy warping of products, and low yield, and achieve the effects of improving production efficiency, improving production efficiency, and high utilization rate

Inactive Publication Date: 2020-04-03
常熟华融太阳能新型材料有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] Currently including the above alumina Al 2 o 3 , aluminum nitride AlN, silicon nitride Si 3 N 4 The preparation technology of the IGBT ceramic substrate mainly uses the tape casting method to form the ceramic substrate of the required size, and then prepares the required product through sintering and surface grinding. The disadvantage of this preparation method is that the product is easy to warp after sintering , high grinding difficulty, low yield

Method used

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  • Preparation method of IGBT ceramic substrate

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Embodiment 1

[0026] Using graded alumina powder with different particle sizes as raw material, doped with 0.7% MgO and 0.125% La 2 o 3 It is used as a sintering aid, mixed with water to make a slurry with a solid content of 90%, and the alumina is prepared into a dense green body by the injection molding method, which is hot-pressed and sintered at 1650 ° C for 3 hours to obtain a dense alumina IGBT ceramic Rod with a density of 98.5%, then fix the alumina IGBT ceramic square ingot on the resin plate, cut it with a diamond wire with a diameter of 300 μm or more, cut it into a square rod with a length of 680 mm, and then fix the alumina ceramic rod on the resin plate , Put the bonded ceramic rod and resin plate into the diamond wire cutting machine for fixing, choose a diamond wire with a diameter of 100 μm, use the tangent process, cut more new wires, and less old wires, the cutting time is 120min, The cutting table speed is 1mm / min, the line speed is set at 20m / s, the cutting fluid consu...

Embodiment 2

[0028] Aluminum nitride powder with a particle size of about 1 μm is used as raw material, doped with 0.3% Y 2 o 3 and 0.125% La 2 o 3 It is used as a sintering aid, mixed with water to make a slurry with a solid content of 85%, and the aluminum nitride is prepared into a dense green body by the slip casting method, and then the green body is hot-pressed and sintered at 1700 ° C for 4 hours, and the pressure 25MPa to obtain a dense aluminum nitride IGBT ceramic rod with a density of 99.2%, then fix the aluminum nitride IGBT ceramic rod on a resin plate, cut it with a diamond wire with a diameter of 300 μm or more, and cut it into a square rod with a length of 680mm, and then Put the bonded IGBT ceramic rod and resin plate into the diamond wire cutting machine for fixing, select the diamond wire with a diameter of 90 μm, adopt the tangent process, cut more new wires and less old wires, the cutting time is 130min, The cutting table speed is 1.5mm / min, the line speed is set at...

Embodiment 3

[0030] Silicon nitride powder with a particle size of about 1 μm is used as raw material, doped with 0.1% Al 2 o 3 and 0.3% Yb 2 o 3 As a sintering aid, silicon nitride (Si 3 N 4) was prepared into a dense body, followed by GPS sintering at 1950°C and 5MPa nitrogen atmosphere for 3 hours to obtain a dense silicon nitride IGBT ceramic rod with a density of 98.7%, and then the silicon nitride IGBT ceramic rod was fixed on the resin plate, Cut with a diamond wire with a diameter of more than 300 μm, and cut it into a square rod with a length of 680 mm, then put the bonded silicon nitride IGBT ceramic rod and resin plate into a diamond wire cutting machine for fixing, and select a diamond wire with a diameter of 60 μm , using the tangent process, cutting with more new wires and less old wires, the cutting time is 130min, the cutting table speed is 0.5mm / min, the line speed is set at 10m / s, the cutting fluid consumption is 2L / knife, and the final piece is produced 2000 Silicon...

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Abstract

The invention relates to a preparation process of an IGBT ceramic substrate, which comprises the steps of preparing a large IGBT ceramic green body by adopting a dry pressing combined isostatic pressing, grouting or gel casting forming process; preparing a bulk ceramic sintered body through sintering supplemented by air pressure sintering or hot pressing sintering, cutting the bulk ceramic sintered body into rod-like sizes required by IGBTs, and placing the rod-like sizes on a diamond wire cutting machine for cutting so as to be able to prepare IGBT ceramic substrates in batches. The ceramic prepared according to the method is high in density, and the density can reach 95% or above. Meanwhile, the preparation efficiency of the IGBT ceramic substrate can be greatly improved, the thickness of the substrate can be adjusted according to different requirements, the operation is easier and more feasible compared with a tape casting method, the thickness uniformity and the surface evenness ofthe ceramic substrate can be accurately controlled at the same time, and the quality of the substrate is improved.

Description

technical field [0001] The invention belongs to the field of ceramic material processing, and in particular relates to a method for preparing an IGBT ceramic substrate. Background technique [0002] Insulated gate bipolar transistor IGBT is the most advanced power electronic device for power conversion and control. With a series of advantages such as high current, it is known as the "CPU" of modern industrial converters, and is widely used in strategic industries such as rail transit, aerospace, new energy vehicles, wind power, and national defense industries. [0003] The heat generated by the high-voltage and high-power IGBT module is mainly dissipated through the ceramic copper-clad laminate to the housing. Therefore, the ceramic copper-clad laminate is an indispensable key basic material for the packaging of functional modules in the field of power electronics. The performance of the ceramic substrate material is the determining factor for the performance of the ceramic...

Claims

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Application Information

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IPC IPC(8): B28D1/22B28D7/04B24B27/06B24B41/06
CPCB24B27/0633B24B41/06B28D1/22B28D7/04
Inventor 张福军
Owner 常熟华融太阳能新型材料有限公司
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