Laser diode based on gallium nitride single-crystal substrate and preparation method of laser diode

Abstract

The invention discloses a laser diode based on a gallium nitride single crystal substrate and a preparation method of the laser diode. The laser diode comprises the GaN single-crystal substrate, an n-type GaN layer, an n-type limiting layer, a lower waveguide layer, a composite quantum well active region, an electron blocking layer, an upper waveguide layer, a p-type limiting layer and a p-type GaN layer which are sequentially stacked from bottom to top. According to the invention, the high-quantum efficiency stress regulation and control active region structure, the novel optical waveguide layer structure and the novel limiting layer structure of the gallium nitride-based laser diode are designed and optimized; the laser diode is prepared on the low-dislocation-density GaN single-crystalsubstrate; the technical difficulty of epitaxial preparation of a GaN-based laser is eliminated; and a GaN-based laser with high reliability and high quantum efficiency can be obtained.

Description

technical field [0001] The invention relates to the technical field of laser diodes, and more specifically, to a laser diode based on a gallium nitride single crystal substrate and a preparation method thereof. Background technique [0002] Group III-V nitride semiconductor materials are the third-generation semiconductor materials after silicon and gallium arsenide, including gallium nitride (GaN), aluminum nitride (AlN), indium nitride (InN) and their alloys , is a direct bandgap semiconductor, which has the advantages of large band gap (range 0.7-6.2eV), high breakdown electric field, high thermal conductivity, high electron saturation rate, strong radiation resistance and chemical corrosion resistance. These advantages in optoelectronic properties make III-V nitride materials have a strong competitive advantage in the field of optoelectronics (such as LED and LD), and are in an irreplaceable position. They are ideal materials for semiconductor lasers from ultraviolet to ...

AI Technical Summary

Problems solved by technology

However, the current quantum efficiency of GaN-based lasers is low, and further improvements are needed in terms of lifetime, reliability, and stability.

Chinese patent application 201610183087.X discloses a green laser epitaxial wafer with a stress-regulated waveguide layer. The substrate of the green laser epitaxial wafer is GaN, and its optical confinement factor and quantum efficiency are not high enough to meet the current needs.

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