Organic thin film transistor and preparation method thereof

Abstract

The invention provides an organic thin film transistor and a preparation method thereof, which belong to the technical fields of organic electronics and photo-electronics. The organic thin film transistor includes a substrate, a source-drain layer containing a source and a drain, an organic semiconductor layer, a gate insulating layer and a gate layer. One surface of the substrate is the source-drain layer. The surface of the source-drain layer away from the substrate is the organic semiconductor layer. The surface of the organic semiconductor layer away from the source-drain layer is the gateinsulating layer. The surface of the gate insulating layer away from the organic semiconductor layer is the gate layer. The source-drain layer is made of conductive ink. The preparation method of theorganic thin film transistor includes the following steps: coating one surface of a substrate with conductive ink; curing the conductive ink to form a first electrode layer; and exposing, developingand heat-treating the first electrode layer to obtain a source-drain layer. The organic thin film transistor prepared by the method needs neither a flat layer nor a photoresist layer, and can be patterned directly.

Description

technical field [0001] The invention relates to the technical fields of organic electronics and optoelectronics, in particular to an organic thin film transistor and a preparation method thereof. Background technique [0002] In the prior art, the preparation method of an organic thin film transistor is usually to form an organic planar layer on the substrate, and then deposit metal or metal alloy on the organic planar layer to form an electrode layer, which can be a gate layer, or form a source layer and a drain layer. polar layer. [0003] The inventors found that the above method has at least the following problems: the planar layer usually requires high-energy ultraviolet curing and high-temperature, long-time thermal curing to obtain a highly cross-linked insulating film. The manufacturing process is complicated, which increases the production cost and reduces the manufacturing efficiency of the device substrate. [0004] When depositing metal or metal alloy on a flat...

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Problems solved by technology

[0003] The inventors found that the above method has at least the following problems: the flat layer usually requires high-energy ultraviolet curing and high temperature and long-term thermal curing to obtain a highly cross-linked insulating film

[0006] In the process of removing photoresist, in order to remove the residual photoresist in the channel as much as possible and realize high-quality electrode layer production, multiple processes of exposure and development are usually required, but too much developer flushing will also affect the process to a certain extent. upper damage planar surface

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