Phase change memory and preparation method thereof

Abstract

The invention discloses a phase change memory, which comprises a substrate, a doping layer, a diode and a phase change resistor from bottom to top, wherein the doping layer is arranged on the top of the substrate; the doping layer and the substrate independently comprise at least two pieces of shallow trench isolation; the diode is positioned between two pieces of shallow trench isolation and comprises a first two-dimensional crystal film and a second two-dimensional crystal film; the second two-dimensional crystal film is positioned above the first two-dimensional crystal film; and the phasechange resistor comprises a lower electrode, sulfide with a phase change ability, and an upper electrode, wherein the lower electrode, the sulfide and the upper electrode are positioned above the second two-dimensional crystal film in sequence. By use of the phase change memory and the preparation method thereof, the unit size of a 1D1R structure phase change memory device unit prepared from the diode prepared from the two-dimensional crystal and the phase change resistor is small, the storage density of the phase change memory can be improved, and meanwhile, graphene is adopted as a lower electrode to lower device power consumption.

Description

technical field [0001] The present invention relates to the field of integrated circuits, in particular to a phase change memory and its preparation method, Background technique [0002] With the emergence of a series of new information technologies such as big data, Internet of Things, cloud computing, and mobile Internet, the requirements for high read / write speed, low power consumption, high storage density, long service life, and high reliability have been put forward for memory. At present, the storage method of memory is mainly DRAM+Flash. NAND Flash has high integration and low cost, but its speed is slow and its lifespan is short. Although DRAM is fast and has a long lifespan, it loses data after power failure and is expensive. Therefore, the research and development of a new type of storage technology has become a research hotspot in the industry in recent years. This type of new storage technology must have the advantages of DRAM and NAND Flash at the same time, t...

AI Technical Summary

Problems solved by technology

However, the two-dimensional crystal material is in contact with any metal, and its contact resistance is very high, which affects the electrical performance of the two-dimensional crystal as a diode.

Images