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Perovskite solar cell-supercapacitor integrated device and preparation method of the same

A technology for solar cells and supercapacitors, which is applied in the manufacture of hybrid/electric double layer capacitors, capacitors, hybrid capacitor electrodes, etc., can solve problems such as the inability to apply flexible electronic products, and is beneficial to packaging and use, simplifies the preparation process, and increases The effect of contact area

Inactive Publication Date: 2017-08-11
HUAZHONG UNIV OF SCI & TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the preparation of perovskite solar cells still involves high-temperature processes, which cannot be applied to flexible electronic products. The preparation of flexible micro-energy integrated devices based on perovskite solar cells still needs to carry out in-depth research and exploration.

Method used

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  • Perovskite solar cell-supercapacitor integrated device and preparation method of the same

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preparation example Construction

[0055] According to another aspect of the present invention, there is also provided a method for preparing a solar cell-supercapacitor integrated device, comprising the following steps:

[0056] 1) Pretreatment of the flexible conductive substrate 1: ultrasonic cleaning with acetone and ethanol for 15 to 20 minutes respectively to remove organic matter on the surface of the substrate, then cleaning with deionized water, and finally putting it into an ultraviolet ozone cleaner for 30 to 40 minutes carry out surface modification;

[0057] 2) growing by hydrothermal method, preparing CdS nanorods on the flexible conductive substrate 1 pretreated in step 1) as the photoanode 2 of the perovskite solar cell;

[0058] 3) Spin-coat PbBr on the photoanode 2 prepared in step 2) 2 solution, thereby forming a perovskite layer;

[0059] 4) Printing conductive carbon paste on the perovskite layer prepared in step 3) to prepare the first carbon counter electrode layer 4;

[0060] 5) Soak ...

Embodiment 1

[0068] Step 1: Clean the cut PET film coated with FTO ultrasonically with acetone and ethanol for 15 minutes to remove organic matter on the surface, then wash it with deionized water, and finally put it in a UV ozone cleaner for 30 minutes to clean the surface. modified;

[0069] Step 2: Take 1mmol / L cadmium nitrate Cd(NO 3 ) 2 4H 2 O, 3mmol / L thiourea and 0.6mmol / L glutathione were made into hydrothermal growth solution, and the FTO-coated side of the PET film after etching was placed vertically downward in a special stainless steel autoclave containing hydrothermal growth solution. On the bottom of the Flon liner, hydrothermal growth of CdS rods was carried out at a growth temperature of 200 °C and a growth time of 4 h. Afterwards, ultraviolet ozone treatment 10min;

[0070] Step 3: Spin-coat 1M PbBr on the surface of the photoanode 2 prepared in step 2 2 solution, the solvent is dimethylformamide (DMF), and then dried at 80°C for 20min;

[0071] Step 4: PbBr prepared...

Embodiment 2

[0079] Step 1: Clean the cut PET film coated with FTO ultrasonically for 17 minutes with acetone and ethanol respectively to remove organic matter on the surface, then wash it with deionized water, and finally put it in a UV ozone cleaning machine for 35 minutes to clean the surface. modified;

[0080] Step 2: Take 1mmol / L cadmium nitrate Cd(NO 3 ) 2 4H 2 O, 3mmol / L thiourea and 0.6mmol / L glutathione were made into hydrothermal growth solution, and the FTO-coated side of the PET film after etching was placed vertically downward in a special stainless steel autoclave containing hydrothermal growth solution. On the bottom of the Flon liner, hydrothermal growth of CdS rods was carried out at a growth temperature of 190 °C and a growth time of 4 h. Afterwards, ultraviolet ozone treatment 10min;

[0081] Step 3: Spin-coat 1M PbBr on the surface of the photoanode 2 prepared in step 2 2 solution, the solvent is dimethylformamide (DMF), and then dried at 80°C for 20min;

[0082]...

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Abstract

The invention belongs to the technical field of an energy conversion and storage device, and discloses a perovskite solar cell. The perovskite solar cell includes a flexible conductive substrate, a photoanode, a perovskite layer and a first carbon counter electrode layer, wherein the photoanode is a CdS nanometer rod array structure, and is arranged on the upper surface of the flexible conductive substrate and is provided with a pore structure; the a light absorption layer is a CsPbBr3 inorganic perovskite layer which is embedded into the pore structure of the photoanode so as to closely contact the photoanode; and the first carbon counter electrode layer is paved on the upper surface of an ITO conductive layer and the upper surface of the light absorption layer, and is formed through screen printing and film forming. As the perovskite solar cell utilizes the full inorganic perovskite as the light absorption layer and the full inorganic perovskite has higher humidity and heat stability, preparation of cell can be performed in the air. Therefore, the requirement for production equipment is reduced; large scale of cell production becomes implementable; the stability of the prepared cell is high; and the performance of cell attenuates more slowly.

Description

technical field [0001] The invention belongs to the technical field of energy conversion and storage devices, and more specifically relates to a perovskite solar cell-supercapacitor integrated device and a preparation method thereof. Background technique [0002] As a clean, environmentally friendly, cheap and abundant renewable energy, solar energy has attracted more and more attention. Among solar energy utilization methods such as photothermal conversion, photoelectric conversion, and photochemical conversion, photoelectric conversion has the characteristics of permanence, cleanliness, and flexibility, which provides the possibility for large-scale utilization and storage of solar energy. The basic device of solar photoelectric conversion is solar cells. After years of development, all kinds of solar cells have made great progress. At present, silicon-based solar cells are relatively mature in technology, and the highest laboratory efficiency of monocrystalline silicon-b...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/0224H01L31/032H01L31/18H01G11/32H01G11/56H01G17/00H01G11/84
CPCH01G11/32H01G11/56H01G11/84H01G17/00H01L31/022425H01L31/032H01L31/18Y02E10/50Y02E60/13Y02P70/50
Inventor 廖广兰叶海波刘智勇刘星月韩京辉涂玉雪史铁林汤自荣
Owner HUAZHONG UNIV OF SCI & TECH
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