Preparation method of amorphous indium tin oxide thin film

Abstract

The invention discloses a method for preparing an amorphous indium tin oxide thin film, which comprises the following steps: providing a substrate; and placing the substrate in a cavity of a magnetron sputtering device; Argon-hydrogen mixed gas with a content of 1% to 3% is used as the process gas, and indium tin oxide is used as the target material, the temperature of the substrate is controlled to be -50°C to 100°C, and magnetron sputtering is performed on the substrate An amorphous indium tin oxide film is deposited. The preparation method of this amorphous indium tin oxide thin film adopts the indium tin oxide target material (mass ratio of indium oxide is 85%~93%) used in the conventional crystalline indium tin oxide film, and the volume of hydrogen gas is used in the indium tin oxide coating process The argon-hydrogen mixed gas with a percentage content of 1% to 3% is the process gas. The hydrogen has good dispersibility and is conducive to uniform distribution. There is no need to add expensive testing equipment to monitor the water pressure. The prepared amorphous indium tin oxide film is excellent. stability.

Description

technical field [0001] The invention relates to the field of vacuum coating, in particular to a method for preparing an amorphous indium tin oxide thin film. Background technique [0002] Indium tin oxide (indium tin oxide) thin film, as the most commonly used transparent conductive film, is widely used in the field of transparent display. Crystalline indium tin oxide thin films generally need to be prepared at high temperatures (>200°C), and subsequent pattern processing often requires aqua regia to etch. However, the etching of crystalline indium tin oxide film requires strong acid, and its process control is difficult. The etching process is easy to damage other film layers or product components, and at the same time, the environmental pollution and damage to the production line are relatively large. [0003] The amorphous indium tin oxide thin film has low deposition temperature, easy etching, and low damage to the product during the etching process, which has obviou...

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Problems solved by technology

However, the following problems exist in the method of introducing a certain proportion of water vapor during the deposition process of indium tin oxide: 1. The water vapor in the vacuum chamber is difficult to disperse evenly, which leads to uneven film quality of the indium tin oxide film; 2. The water pressure needs to be accurate. Control, and its control requires expensive monitoring equipment and other issues. In addition, the indium tin oxide film prepared by it still has a small amount of crystallization in the weather resistance test, which affects subsequent processing and use.

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