Planar indium gallium arsenic light-sensitive chip with surface passivation improved and manufacturing method
An indium gallium arsenic, planar technology, applied in the fields of final product manufacturing, sustainable manufacturing/processing, electrical components, etc., can solve the problems of reduced surface passivation, InP surface oxidation, and epitaxial material surface damage, etc., to achieve enhanced passivation chemical effect
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[0045] The specific implementation method of the present invention will be described in detail below in conjunction with the accompanying drawings.
[0046] as attached figure 1 As shown, the epitaxial wafer used in this embodiment adopts metal-organic chemical vapor deposition (MOCVD) technology, and on a semi-insulating InP substrate 1 with a thickness of 350 μm, an N-type InP layer 2 with a thickness of 0.5 μm is sequentially grown. Fluor concentration>2×10 18 cm -3 ; InGaAs intrinsic absorption layer 3 with a thickness of 2.5 μm and a carrier concentration of 5×10 16 cm -3 ; An N-type InP cap layer 4 with a thickness of 1 μm and a carrier concentration of 5×10 16 cm -3 . The preparation process of the planar InGaAs infrared detector chip in this embodiment is based on the existing process, after the closed-tube diffusion, the process of adding nitrogen atmosphere heat treatment; before depositing the silicon nitride passivation film, introducing The process of remov...
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