Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Silicon solar cell front face electrode lead-free silver paste and preparing method thereof

A silicon solar cell and front electrode technology, which is applied in the manufacture of cables/conductors, conductive materials dispersed in non-conductive inorganic materials, circuits, etc. application and other issues to achieve the effect of improving photoelectric conversion efficiency, improving wetting and leveling properties, and improving compactness and smoothness

Inactive Publication Date: 2014-11-19
TIANJIN VOCATIONAL INST
View PDF6 Cites 25 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Although the conductive paste disclosed in the patent of Yingli Group Company does not contain inorganic glass powder and increases the silver content in the silver paste, it increases the process of printing etchant, requires high technical requirements for the etching operation process, requires special equipment, and is not easy for industrial application

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0033] In the container, the average particle size is 1-2μm, the tap density is 4.5-5.0g / ml, and the specific surface area is 0.4-1.0m 2 / g of fine silver powder 100g and average particle size 50-150nm, tap density 0.8-2.5g / ml, specific surface area 10-50m 2 The nanometer silver powder 10g of / g mixes evenly and obtains conductive silver powder 110g.

[0034] Mix 50 g of butyl carbitol and 20 g of terpineol; sequentially add 20 g of dihydroxyethyl cocoamine and 10 g of ethyl cellulose to dissolve, stir evenly to make 100 g of transparent organic carrier.

[0035] With 85g of conductive silver powder prepared above, 3g of anti-reflection film corrosion agent potassium fluotitanate, 10g of organic carrier prepared above, 2g of additive triethanolamine, stir the above mixture in a container, and grind the mixture 10 times on a three-roll mill , through the fine adjustment of the solvent, the fineness of the silver paste is below 8 μm, and the viscosity is 200-300 Pa·S, so as to ...

Embodiment 2

[0038] In the container, the average particle size is 1-2μm, the tap density is 4.5-5.0g / ml, and the specific surface area is 0.4-1.0m 2 / g of fine silver powder 100g and average particle size 50-150nm, tap density 0.8-2.5g / ml, specific surface area 10-50m 2 The nanometer silver powder 20g of / g mixes and obtains conductive silver powder 120g.

[0039] Mix 60 g of butyl carbitol and 15 g of terpineol; add 20 g of dihydroxyethyl cocoamine and 5 g of ethyl cellulose in sequence to dissolve, and stir evenly to make 100 g of a transparent organic vehicle.

[0040] Mix 75g of the above-prepared conductive silver powder, 3g of the anti-reflection film corrosion agent potassium fluoroaluminate, 20g of the above-prepared organic carrier, and 2g of the additive tetramethylammonium hydroxide in a container, and grind the mixture on a three-roll mill 10 times, through the fine adjustment of the solvent, the fineness of the silver paste is less than 8 μm, the viscosity is 200-300 Pa·S, a...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
particle sizeaaaaaaaaaa
specific surface areaaaaaaaaaaa
particle sizeaaaaaaaaaa
Login to View More

Abstract

The invention discloses silicon solar cell front face electrode lead-free silver paste and a preparing method thereof. The silicon solar cell front face electrode lead-free silver paste is characterized in that inorganic glass powder is not contained in the silver paste, and the silver paste comprises, by mass, 75-85 percent of conductive silver powder, 1-5 percent of antireflective film corrosive, 10-20 percent of organic vehicle and 1-5 percent of additive; the conductive silver powder is formed by mixing micro silver powder and nano silver powder with the mass ratio of 10:1-2; the antireflective film corrosive comprises one or more of potassium fluotitanate, potassium fluoroaluminate, potassium fluosilicate and potassium fluoborate; the additive comprises one or more of ethanol amine, diethanol amine, triethanol amine, tetramethylammonium hydroxide, tetraethylammonium hydroxide and tetramethylammonium hydroxide. According to the silicon solar cell front face electrode lead-free silver paste and the preparing method thereof, lead-free silver paste printing and antireflective film removing are conducted in one step, sintering can be conducted at a low temperature, the compactness and the smoothness of a silver electrode film are improved, and the photoelectric conversion efficiency of a silicon cell piece is improved.

Description

technical field [0001] The invention relates to a lead-free silver paste for a front electrode of a silicon solar cell and a preparation method thereof, in particular to a lead-free silver paste for a front electrode of a silicon solar cell without glass powder and a preparation method thereof, which is suitable for high photoelectric conversion efficiency, high The invention relates to a silicon solar cell system requiring printing precision, and belongs to the field of new materials and solar cells. Background technique [0002] A solar cell is a semiconductor device that can convert solar energy into electrical energy. Under the condition of light, the solar cell will generate current, collect and transmit electricity through grid lines and electrodes. The industrial production of crystalline silicon cells consists of slicing p-type crystalline silicon materials, cleaning and chemical etching to make texture; phosphorus diffusion on the light-receiving surface to form a p...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01B1/22H01B13/00
Inventor 刘炳光王少杰李建生
Owner TIANJIN VOCATIONAL INST
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com