N-type diamond semiconductor monocrystal and production method thereof

Abstract

The invention relates to an N-type diamond semiconductor monocrystal and a production method thereof. The crystal contains nitrogen ions, lithium ions and beryllium ions regularly arrayed in the crystal, wherein the total content of nitrogen-lithium atom pairs, nitrogen-beryllium atom pairs and lithium-nitrogen-beryllium atom pairs is 100-10000ppm, the size of the semiconductor monocrystal is 0.3-10mm, and the crystal is a regular hexahedron, a regular octahedron or a hexahedron-octahedron. The production method comprises the following steps of: mixing graphite powder, a metal catalyst, lithium nitride and beryllium nitride in proportion, pressurizing to 100-300MPa to carry out cold isostatic pressing treatment, relieving the pressure, then breaking the mixed materials, placing the broken mixed materials into a mold to press to form columnar synthetic columns, sintering in vacuum, filling synthetic blocks, and processing in a high-temperature high-pressure oriented magnetic field; breaking the synthetic columns, performing electrolysis and separating by using a shaker to obtain the N-type diamond semiconductor monocrystal. The monocrystal provided by the invention is good in conductivity, high in optical-to-thermal energy conversion efficiency, suitable for manufacturing solar batteries, LED (Light Emitting Diode) sources and high-performance chips, and stable in performance.

Description

[0001] technical field [0002] The invention relates to a diamond semiconductor material, in particular to an N-type semiconductor diamond single crystal and a production method thereof. Background technique [0003] Traditional semiconductor materials are mainly silicon. With the further improvement of integrated circuit manufacturing technology, silicon semiconductor integrated circuits have entered the nanometer era. The integration of the latest Core i7 third-generation CPU chips has reached 22 nanometers. According to Moore's Law, the size of integrated circuits will be reduced by half every eighteen months, making the frequency of CPUs jump from hundreds of megabytes in the last century to gigabytes at present. However, as the manufacturing process of silicon semiconductor chips enters the nanometer era, the characteristics of silicon semiconductor materials have become the key to restricting the further improvement of chip performance. The operating temperature of co...

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Problems solved by technology

Japan's Sumitomo Corporation uses CVD (chemical vapor deposition) to synthesize N-type diamond semiconductors, using methane as a gas source and doping phosphorus atoms and sulfur atoms, and synthesizes N-type diamond semiconductors on (111) crystal-oriented substrates, but This process needs to use an expensive diamond single wafer as the substrate, and the speed of growing a single crystal is extremely slow, and the atomic radius of phosphorus and sulfur is much larger than that of carbon. This kind of doping can easily change the crystal structure inside the diamond, resulting in crystallization. lattice deformation, forming a large number of crystal defects, which will lead to an increase in the internal resistance of the crystal, and its actual performance will be greatly reduced

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