Preparation method for diamond/copper composite material with high heat conductivity and low thermal expansion coefficient

A low thermal expansion coefficient and composite material technology, applied in the field of metal matrix composite materials, can solve the problem of low thermal conductivity of composite materials, achieve good interface bonding, high density, and reduce thermal expansion coefficient

Inactive Publication Date: 2012-10-17
HARBIN INST OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] The present invention aims to solve the technical problem of low thermal conductivity of the composite material prepared by directly compounding diamond and pure copper by using powder metallurgy or infiltration method, so as to provide a diamond / copper composite material with high thermal conductivity and low thermal expansion coefficient Preparation method of composite material

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  • Preparation method for diamond/copper composite material with high heat conductivity and low thermal expansion coefficient

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specific Embodiment approach 1

[0014] Specific Embodiment 1: In this embodiment, a method for preparing a diamond / copper composite material with high thermal conductivity and low thermal expansion coefficient is realized according to the following steps:

[0015] 1. Copper-coated diamond powder is formed by electroless copper plating on the surface of diamond powder with a particle size of 1-200 μm to coat a copper coating of 0.1-5 μm;

[0016] 2. Mix the copper-plated diamond powder and copper powder in step 1 by mechanical powder mixing to form a mixed powder;

[0017] 3. Use a graphite mold to cold-press the mixed powder prepared in step 2, then put the cold-pressed mixed powder together with the graphite mold into a vacuum hot-press furnace, and first evacuate the vacuum hot-press furnace to a vacuum degree of 0.001 ~0.1Pa, and then under the condition of heating rate of 5~20℃ / min, the temperature of the vacuum hot-press furnace is raised to 800~1000℃, and the pressure is applied to 20~60MPa at the same...

specific Embodiment approach 2

[0021] Embodiment 2: This embodiment differs from Embodiment 1 in that: the particle size of the diamond powder in step 1 is 50-150 μm. Other steps and parameters are the same as those in Embodiment 1.

specific Embodiment approach 3

[0022] Embodiment 3: The difference between this embodiment and Embodiment 1 or 2 is that the particle size of the diamond powder in step 1 is 100 μm. Other steps and parameters are the same as those in Embodiment 1 or Embodiment 2.

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Abstract

The invention discloses a preparation method for a diamond / copper composite material with high heat conductivity and low heat expansion coefficient, which relates to a preparation method for a diamond / copper composite material, to solve the technical problem of low heat conductivity of the traditional composite material prepared by directly compositing the diamond and pure copper by adopting a powder metallurgy or infiltration method. The preparation method comprises the following steps of: (1) plating copper on the surface of diamond powder by adopting a chemical copper plating method to prepare copper plated diamond powder; (2) mixing the copper plated diamond powder in the step (1) with copper powder by adopting a mechanical powder mixing mode to form mixed powder; and (3) performing cold pressing and molding on the mixed powder prepared in the step (2), and compounding the mixed powder with copper through vacuum hot pressing and sintering to obtain the diamond / copper composite material with high heat conductivity and low heat expansion coefficient. After sintering, the interface bonding of the composite material is better, and the density is higher; and the heat conductivity of the composite material reaches 500W / m.K, and the heat expansion coefficient is reduced to 7.8*10<-6> / K. The preparation method is applied to the field of preparation of diamond / copper composite materials.

Description

technical field [0001] The invention belongs to the research field of metal matrix composite materials, and relates to a preparation method of diamond / copper composite materials. Background technique [0002] With the rapid development of microelectronics technology, the packaging density of semiconductor integrated circuits is getting higher and higher, and the operating speed is getting faster and faster. However, the high integration and high operating speed make the heat emitted by the device increase rapidly, which leads to an increase in the working environment temperature of the circuit board, thereby affecting the stability of the device. On the other hand, the thermal cycle of the device often produces a large Stress, if the thermal expansion coefficient mismatch between materials will cause thermal fatigue failure of microelectronic circuits and devices. Studies have shown that when the thermal expansion coefficient difference between the substrate and the chip ex...

Claims

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Application Information

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IPC IPC(8): C22C26/00C22C1/05
Inventor 王桂松卡伟罗阳孙守龙耿林
Owner HARBIN INST OF TECH
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