Copper plating substrate-based method for preparing large-area graphene film

Abstract

The invention relates to a method for preparing graphene on a copper plating substrate. The method is characterized by comprising the following steps of: preparing the graphical copper plating substrate on a silicon chip; and growing the graphene on the copper plating substrate for 2 to 5 minutes at the temperature of between 800 and 1,000 DEG C by using a normal pressure chemical vapor deposition method, using methane as a carbon source and using argon and hydrogen as carrier gases. A graphical graphene film can be directly prepared by the method, and the substrate can be compatible with an integrated circuit (IC) process; and the manufacturing method is simple and low in cost, and can be used for large-scale manufacture.

Description

technical field [0001] The invention relates to a method capable of producing graphene films on a large scale, more specifically to a method for preparing large-area graphene films based on an electroplated copper substrate, and belongs to the field of graphene film preparation. Background technique [0002] Graphene, that is, single-layer graphite, is a substance in which carbon atoms are arranged in a honeycomb structure on a plane. It was once considered a purely theoretical material because it was believed to be unstable. However, in 2004, after Geim et al. discovered the independent graphene, some experimental work successively verified that the carriers in graphene are Dirac fermions without static mass. Since then, graphene research boom has begun. [0003] At present, graphene has been proven to have good application prospects in nanoelectronic devices, single-electron transistors, thermoelectric aspects, and conductive films. However, how to prepare high-quality an...

AI Technical Summary

Problems solved by technology

However, how to prepare high-quality and large-area graphene films on a large scale is still a difficult problem. At present, the methods for growing graphene mainly include: mechanical exfoliation method, the obtained graphene is of high quality but the area is small, and the efficiency is also very low; redox method, the operation is simple and the cost is low, but graphene will cause the loss of some physical and chemical properties during the redox process, and the obtained graphene area is also small; the silicon carbide cracking method can obtain large-area graphene, but graphite The quality of graphene is greatly affected by the substrate, and the growth cost is also high, requiring a high-temperature vacuum environment; chemical vapor deposition is suitable for large-scale preparation of graphene, but it is relatively constrained by the metal substrate

[0004] At present, the metal substrates commonly used in chemical vapor deposition methods include Cu, Ni, Ru, etc. For Cu substrates, there are mainly two types of sputtered copper or copper foil on silicon wafers, but these two Cu substrates are in There are certain defects in the preparation process: the sputtered copper is easy to condense into island-shaped particles at high temperature, and the area of ​​the prepared graphene is too small; the copper foil is easy to bend and wrinkle during the operation process, which affects the quality of the substrate. Flatness

[0005] This invention intends to propose a graphene growth method based on an electroplated copper substrate, which is compatible with the IC process and has high preparation efficiency, which solves the problems of difficult patterning, fragile substrates, and small area in the previous graphene preparation process.

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