Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Sapphire wafer cutting method

A sapphire wafer and cutting wire technology, which is applied in chemical instruments and methods, stone processing equipment, fine working devices, etc., can solve the problems of high cost, large material loss, and high price of diamond abrasive wires, and achieve improved dispersion and stability The effect of high capacity, small equipment investment and low cutting cost

Inactive Publication Date: 2010-10-27
铜陵市琨鹏光电科技有限公司
View PDF0 Cites 15 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

But this kind of equipment is not only expensive in itself, taking the cheapest Japanese-made 610SD special multi-wire cutting machine as an example, the single price is about 2.8 million yuan, and the cost of the diamond abrasive wire used is relatively expensive and the wire diameter is about 0.25mm. mm, with larger kerfs and thus greater material loss

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Sapphire wafer cutting method
  • Sapphire wafer cutting method
  • Sapphire wafer cutting method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0014] Equipment used: MWS-3020 crystal multi-wire cutting machine. The main process settings are as follows:

[0015] Cutting speed: max 300~400m / min. Running speed change: acceleration and deceleration time 1s / constant speed time 6~10s. Line speed setting: 15~35m / min. Thread cutting tension setting: 28-31N on the supply side and 28-31N on the recovery side. Cutting speed: 2.0~6.0mm / h.

[0016] The cutting oil is PS-L-25 cutting oil produced by Japan PALACS, with a viscosity of 30mp at 25°C a .s. The abrasive material is diamond micropowder with a particle size of 4-12 μm. The diamond micropowder is formulated into a mortar cutting fluid with cutting oil in three proportions of 4%, 12%, and 20% by weight. The main technical indicators of the cut wafers are as follows:

[0017]

[0018] All indicators meet the requirements of LED substrates.

Embodiment 2

[0020] The equipment and process parameters used are the same as above. The cutting oil is FB-10 cutting oil produced by Shenzhen Jinke Chemical Industry Co., Ltd., with a viscosity of 50mp at 25°C a .s. The abrasive material is diamond micropowder with a particle size of 4-12 μm. The diamond micropowder is formulated into a mortar cutting fluid with cutting oil in three proportions of 4%, 12%, and 20% by weight. The main technical indicators of the cut wafers are as follows:

[0021]

[0022] All indicators meet the requirements of LED substrates.

Embodiment 3

[0024] The equipment and process parameters used are the same as above. The cutting oil adopts Lianchuang brand crystal cutting oil with a viscosity of 20mp at 25°C a .s. The abrasive material is diamond micropowder with a particle size of 4-12 μm. The diamond micropowder is formulated into a mortar cutting fluid with cutting oil in three proportions of 4%, 12%, and 20% by weight. The main technical indicators of the cut wafers are as follows:

[0025]

[0026] All indicators meet the requirements of LED substrates.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
Viscosityaaaaaaaaaa
Particle sizeaaaaaaaaaa
Viscosityaaaaaaaaaa
Login to View More

Abstract

The invention discloses a sapphire wafer cutting method, which is characterized in that a free grinding material multi-line cutting method is adopted, cutting lines adopt metal lines, and grinding materials adopt diamond micro powder. The viscocity of cutting oil used by mortar preparation is between 20 and 50 mpa*s at the normal temperature, and the grain diameter of the diamond micro powder is between 4 and 12 mum. The invention provides the technical method for cutting the sapphire in a free grinding material mode. When the method is adopted, a multi-line cutting machine for cutting crystals can be used for processing sapphire wafers, and the invention has the advantages of high cutting efficiency, high precision, low equipment investment, small cutting loss and low cutting cost.

Description

technical field [0001] The invention relates to a method for cutting sapphire wafers, in particular to a multi-line cutting method for sapphire wafers. Background technique [0002] Sapphire (α-AI203), also known as white sapphire, has good thermal conductivity, excellent electrical and dielectric properties, strong light transmission, abrasion resistance, corrosion resistance, and stable chemical properties; hardness is Damo Grade 9, second only to diamond, with a melting point of 2030°C and excellent stability at high temperatures. So it is widely used in industry, national defense, scientific research, civil and other fields. It is increasingly used as a raw material for many products such as solid-state lasers, infrared windows, semiconductor substrates, light-emitting diode (LED) substrates, precision wear-resistant bearings, 3G mobile phone panels, and high-end watch surfaces. Due to its high hardness and high brittleness, sapphire is difficult to cut into wafers, wh...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): B24B27/06C09K3/14C09G1/02B28D5/04
Inventor 张学炎李林
Owner 铜陵市琨鹏光电科技有限公司
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com