Preparation method of chromium-aluminum-nitrogen film by closed field unbalanced magnetron sputtering
A technology of magnetron sputtering and chromium aluminum nitrogen, which is applied in the direction of sputtering plating, ion implantation plating, metal material coating technology, etc., and can solve problems such as unstable technical parameters and unbalanced film thickness
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[0097] The present invention will be further described below in conjunction with accompanying drawing:
[0098] figure 1 As shown in the figure, it is a state diagram for preparing chrome-aluminum-nitrogen hard film in a magnetron sputtering furnace. The position of each part should be correct, the installation should be firm, and the operation and use should be convenient.
[0099] Argon cylinders, nitrogen cylinders, and vacuum pumps should be reasonably prepared. During coating, the pressure in the furnace chamber should be constant and the gas should be sufficient. The chromium targets and aluminum targets should be arranged symmetrically and equidistantly on the furnace wall. Under the action of a closed unbalanced magnetic field, the argon Ions accelerate the bombardment of the target, so that chromium and aluminum atoms are deposited on the substrate, and react with nitrogen ions to form a hard film of chromium, aluminum and nitrogen. The parameters and temperature are ...
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