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Method for producing nano-ITO powder with plasma electrical arc one-step method

A plasma arc and plasma technology, applied in chemical instruments and methods, inorganic chemistry, gallium/indium/thallium compounds, etc., can solve the problems affecting target sintering, long cycle, long time, etc., to achieve enhanced gasification effect, Good dispersibility and the effect of improving evaporation efficiency

Inactive Publication Date: 2011-04-06
KUNMING UNIV OF SCI & TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Although this method does not directly use chlorides for preparation, there is a process in this method that carries out hydrothermal reaction in a reactor at 130-260°C for 3-24 hours, and the time is too long, resulting in a long cycle of the entire reaction
CN1301911C discloses " a kind of ITO powder preparation method of solid-solution tin in indium oxide ", and it is to use indium nitrate and tin chloride mixed solution as raw material, utilizes spray pyrolysis method to prepare nanometer ITO powder, the powder that this method makes is Spherical, but because it contains chloride ions, it will also affect the sintering of the target

Method used

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  • Method for producing nano-ITO powder with plasma electrical arc one-step method
  • Method for producing nano-ITO powder with plasma electrical arc one-step method
  • Method for producing nano-ITO powder with plasma electrical arc one-step method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0018] Weigh 100g of pure metal In, Sn11.062g (weight ratio: In:Sn=9.04:1) to make alloy melt, use Ar as the plasma working gas, control voltage at 60V, current at 100A, at about 1.5g / min The alloy is fed into the crucible of the plasma reaction chamber at a high speed, and the alloy raw material is used as the positive electrode. The high-frequency igniter is ignited between the positive electrode and the negative electrode of the plasma gun nozzle to form an arc, and the surrounding inert gas is ionized to form a stable plasma. , the raw material is heated and melted by high-temperature plasma, evaporated to form metal vapor, and reacts with oxygen. Since the interlayer of the reactor is cooled by flowing water and cooled by compressed air, a large temperature gradient is formed, resulting in a high supersaturation zone in the metal vapor, and spontaneous nucleation, condensation, and growth from the gas phase. Nanoparticles, enter the collection chamber.

Embodiment 2

[0020] It is basically the same as Example 1, except that the operating voltage of the plasma reaction chamber is 30V, the current is 400A, and the feeding rate is 2.5g / min. Other conditions are the same as Example 1.

Embodiment 3

[0022] It is basically the same as Example 1, except that the operating voltage of the plasma reaction chamber is 40V, the current is 300A, and the feeding rate is 2.5g / min. Other conditions are the same as Example 1.

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Abstract

The invention relates to a method using a plasma arc one step method to prepare nano-size ITO powder. The method is characterized in that In-Sn alloy is continuously sent into a pot of a plasma reaction chamber by a feeding fixed point and fixed amount method, and the plasma reaction chamber uses Ar as a plasma gas, wherein, the working voltage ranges from 30 to 60 V, and the working current ranges from 100 to 400 A; alloyed material is used as a positive pole in the plasma reaction chamber, and a high igniter inflames between the positive pole and the negative pole of a nozzle to form an electric arc; inert gas around ionization forms stable plasma; raw materials are heated and melted by high temperature plasma to evaporate to form metal vapor which reacts with oxygen, and a great temperature grade is formed under the function of flowing water cooling of an inter layer of a reactor, thereby resulting in a high supersaturated zone in the metal vapor; through self nucleation, condensation and growth in a gas phase, nano-size to particle is formed. The nano-size ITO powder made by the method has the advantages of regular grain shape and high powder purity, and the method can realizecontinuous feeding, continuous reaction, and continuous milling. The efficiency is high, and compared with other methods, the method is easier to realize mass production.

Description

technical field [0001] The invention relates to a preparation method of high-purity indium tin oxide (ITO) nanometer powder, which belongs to a kind of powder preparation by gasification method. technical background [0002] Indium Tin Oxide (Indium Tin Oxides, English abbreviation ITO) nanopowder refers to 90% In 2 o 3 with 10% SnO 2 The oxide material composed of it is a new type of special functional material and a high-tech product of deep processing of metal indium. ITO powder is mainly used to prepare ITO targets and ITO thin films. ITO film has high transmittance to visible light, high reflectivity in the infrared region, high absorption rate in the ultraviolet region, good electrical conductivity, good substrate adhesion and chemical stability. The above-mentioned characteristics of ITO make it widely used in many fields, and become a transparent conductive material with important application and research value at this stage. Usually, only high-quality ITO powde...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C01G15/00C01G19/02
Inventor 竺培显陈敬超孙勇孙丽达王玉玺
Owner KUNMING UNIV OF SCI & TECH
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