32 results about "Lead on chip" patented technology

A thermally enhanced, chip-scale, Lead-on-Chip (“LOC”) semiconductor package includes a substrate having a plurality of metal lead fingers in it. A semiconductor chip having an active surface with a plurality of ground, power, and signal connection pads thereon is mounted on an upper surface of the substrate in a flip-chip electrical connection with the lead fingers. A plurality of the ground and/or the power connection pads on the chip are located in a central region thereof. Corresponding metal grounding and/or power lands are formed in the substrate at positions corresponding to the centrally located ground and/or power pads on the chip. The ground and power pads on the chip are connected to corresponding ones of the grounding and power lands in the substrate in a flip-chip connection, and a lower surface of the lands is exposed to the environment through a lower surface of the semiconductor package for connection to an external heat sink. The lands can be connected to selected ones of the lead fingers, and/or combined with one another for even greater thermal and electrical conductivity.

A thermally enhanced, chip-scale, Lead-on Chip (“LOC”) semiconductor packages includes a substrate having a plurality of metal lead fingers in it. A semiconductor chip having an active surface with a plurality of ground, power, and signal connection pads thereon is mounted on an upper surface of the substrate in a flip-chip electrical connection with the lead fingers. A plurality of the ground and/or the power connection pads on the chip are located in a central region thereof. Corresponding metal grounding and/or power lands are formed in the substrate at positions corresponding to the centrally located ground and/or power pads on the chip. The ground and power pads on the chip are connected to corresponding ones of the grounding and power lands in the substrate in a flip-chip connection, and a lower surface of the lands is exposed to the environment through a lower surface of the semiconductor package for connection to an external heat sink. The lands can be connected to selected ones of the lead fingers, and/or combined with one another for even greater thermal and electrical conductivity.

A magnetic field sensor includes a lead frame having a plurality of leads, at least two of which have a connection portion and a die attach portion. A semiconductor die is attached to the die attach portion of the at least two leads. The sensor further includes at least one wire bond coupled between the die and a first surface of the lead frame. The die is attached to a second, opposing surface of the lead frame in a lead on chip configuration. In some embodiments, at least one passive component is attached to the die attach portion of at least two leads.

A packaging assembly (30), such as a ball grid array package, is formed which distributes power across an interior region of an integrated circuit die (52) by using an encapsulated patterned leadframe conductor (59) that is disposed over the die (52) and bonded to a plurality of bonding pads (45) formed in a BGA carrier substrate (42) and in the interior die region, thereby electrically coupling the interior die region to an externally provided reference voltage.

A multi-chip semiconductor package structure. The structure includes two chips and two lead frames. The leads on one of the lead frames have inner leads at one end and joint sections at the other end. The joint sections are connected with another lead frame. Both lead frames use a common set of external leads. The two chips and two lead frames are joined together forming a lead-on-chip structure with the two chips facing each other back-to-back. The assembly except the external leads is enclosed by packaging material.

A semiconductor integrated circuit device includes a semiconductor chip having a memory cell array region surrounded with a peripheral circuit region and includes a plurality of bonding pads disposed at least in one row on only one side of the semiconductor chip. The circuit device may include first leads group disposed adjacent to the bonding pad side and a second leads group disposed opposite the first leads group. The second leads group may be formed over a portion of the semiconductor chip (lead-on-chip structure). A plurality of bonding wires connect the first and second leads group with the plurality of bonding pads respectively.

A BGA package primarily includes a plurality of leads from a leadless lead frame, a chip, and a die-attaching layer. The chip is electrically connected to the leads by a plurality of bonding wires. Solder balls are disposed at the ball placing regions of the leads. Encapsulant encapsulates the chip, the die-attaching layer, and the top surfaces, the bottom surfaces, and the sides of the leads so that the ball placing regions are embedded inside the encapsulant. A plurality of cavities are formed in the encapsulant to expose the corresponding ball placing regions to resolve the solderability of the solder balls and to enhance the stability and reliability of wire bonding and solder ball placing. In one embodiment, a die-attaching layer between the chip and the leads is patterned for elastically supporting the solder balls and for wire bonding.

A BGA package primarily includes a leadless leadframe with a plurality of leads, a chip disposed on the leads, a die-attaching layer adhering to an active surface of the chip and the top surfaces of the leads, a plurality of bonding wires electrically connecting the chip to the leads, an encapsulant, and a plurality of solder balls. Each lead has a bottom surface including a wire-bonding area and a ball-placement area, moreover, a plurality of lips project from the bottom surfaces of the leads around the ball-placement areas. The encapsulant encapsulates the chip, the bonding wires, the die-attaching layer, and the top surfaces, the bottom surfaces except the ball-placement areas, and the laterals of the leads between the top surfaces and the bottom surfaces. A plurality of cavities are formed in the bottom of the encapsulant to expose the corresponding and embedded ball-placement areas. The lips have a plurality of internal sides exposed inside the cavities. The solder balls are disposed on the ball-placement areas and on the internal sides of the cavities to make the solder balls partially embedded in the corresponding cavities to offer non-planar ball pads. It is effective to resolve the solderability of the solder balls and to enhance the reliability of wire bonding and the stability of solder ball placement.

Used for semiconductor packing, an adhesive agent (130) is used on parts of a conductor framework (120) and on parts of a specific surface on an integrated switching circuit chip (ISCC) so as to hold the conductor framework on the ISCC. A majority of input/output contact points (112) are located on the top side of the ISCC. Independent claims are also included for the following: (A) A method for producing semiconductor packing; (B) and for a device for producing semiconductor packing.

As the semiconductor chip is large-sized, highly integrated and speeded up, it becomes difficult to pack the semiconductor chip together with leads in a package. In view of this difficulty, there has been adopted the package structure called the “Lead-On-Chip” or “Chip-On-Lead” structure in which the semiconductor and the leads are stacked and packed. In the package of this structure, according to the present invention, the gap between the leading end portions of the inner leads and the semiconductor chip is made wider than that between the inner lead portions except the leading end portions and the semiconductor chip thereby to reduce the stray capacity, to improve the signal transmission rate and to reduce the electrical noises.