Method for preparing stabilizing rare-earth oxide grate dielectric film

Abstract

The invention introduces the aluminum oxide protection layer to produce stable rare earth oxide grating dielectric film, it deposits the rare earth oxide film on the semi-conductor substrate material to be used as high dielectric grating media material, then carries in situ aluminum oxide protection layer deposition, the rare earth oxide film material: Y2O3, La2O3, and other oxide of the lanthanum series such as Pr2O3, CeO2, Gd2O3, and Er2O3.

Description

1. Technical field [0001] The invention belongs to the technology of semiconductor integrated circuits, and relates to a method for protecting a rare-earth oxide gate dielectric film, in particular to a method for preparing a stable rare-earth oxide gate dielectric film by introducing an aluminum oxide protective layer. 2. Background technology [0002] Metal-oxide-semiconductor field effect transistors (MOSFETs) in silicon-based semiconductor integrated circuits are the basic units that constitute memory elements, microprocessors and logic circuits, and their volume is directly related to the integration level of VLSI. According to the famous Moore's Law, the integration level of integrated circuits will double every 18 months. When the size of transistor devices shrinks to the submicron level (below 0.1 micron), silicon dioxide, a traditional gate dielectric device material, reaches its basic physical limit. The tunnel effect will cause a large leakage current between the...

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Problems solved by technology

However, its disadvantage is that rare earth oxides are easy to absorb water vapor and carbon dioxide in the air in the usual environment, resulting in deterioration of electrical properties and device performance.

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